Abstract: The present application provides an array substrate. The array substrate in each of a plurality of subpixel areas includes a first thin film transistor having a first gate electrode connected to one of a plurality of gate lines, a first source electrode connected to one of a plurality of data lines, and a first drain electrode connected to a pixel electrode; a second thin film transistor having a second gate electrode, a second source electrode connected to the one of the plurality of data lines, and a second drain electrode connected to the pixel electrode; and a third thin film transistor having a third gate electrode connected to the one of the plurality of data lines, a third source electrode connected to the one of the plurality of gate lines, and a third drain electrode connected to the second gate electrode and one of a plurality of auxiliary signal lines.

Abstract: The present application provides an array substrate. The array substrate in each of a plurality of subpixel areas includes a first thin film transistor having a first gate electrode connected to one of a plurality of gate lines, a first source electrode connected to one of a plurality of data lines, and a first drain electrode connected to a pixel electrode; a second thin film transistor having a second gate electrode, a second source electrode connected to the one of the plurality of data lines, and a second drain electrode connected to the pixel electrode; and a third thin film transistor having a third gate electrode connected to the one of the plurality of data lines, a third source electrode connected to the one of the plurality of gate lines, and a third drain electrode connected to the second gate electrode and one of a plurality of auxiliary signal lines.

Abstract: The present disclosure relates to a signal acquisition device, a signal acquisition method and a wearable apparatus. A preamplifier circuit in the signal acquisition device amplifies an obtained sEMG signal to produce an amplified sEMG signal. A baseline drift suppression circuit in the signal acquisition device extracts a first low-frequency component from the amplified sEMG signal and performs subtraction processing between the amplified sEMG signal and the first low-frequency component to obtain a difference signal. A filter circuit in the signal acquisition device filters the difference signal to obtain a target acquisition signal. With introduction of baseline drift suppression in the signal acquisition circuit, the baseline drift caused by a low-frequency component in a sEMG signal is eliminated, and the stability of a target acquisition signal is enhanced.