Abstract: Provided is a method for preparing high-purity indium (In). The method for preparing the high-purity In includes: distilling refined In to obtain an In vapor-containing gas; and condensing the In vapor-containing gas to obtain the high-purity In; where the distilling is conducted at a temperature of 1,000° C. to 1,100° C. under a vacuum degree of 1.0×10?3 Pa to 5.0×10?2 Pa; and the condensing is conducted at a temperature of 700° C. to 900° C. under a vacuum degree of 1.0×10?3 Pa to 5.0×10?2 Pa. The In vapor-containing gas is obtained by controlling the temperature and vacuum degree of the distilling to evaporate In and impurities with a vapor pressure higher than the In. The temperature and vacuum degree of the condensing are adjusted to condense the In in the In vapor-containing gas.

Abstract: An apparatus for transferring a substrate to a substrate processing chamber. The apparatus comprises: a substrate transfer chamber having a floor and a side wall; a substrate transfer module comprising a holder and second magnets, and configured to be movable in the substrate transfer chamber by magnetic levitation; and a controller configured to control an operating force for moving the substrate transfer module. The controller comprises: a parameter storage configured to store at least one model parameter; a control schedule creating section configured to acquire identification information and a movement schedule, to obtain the operating force, and to output a control schedule; and a magnetic force adjusting section configured to perform feedforward control.