Abstract: The present disclosure is directed to a multi-functional composition including activated carbon that is useful for injection into aqueous mediums such as soil or groundwater for sequestration of contaminants in a contaminated plume. The composition of activated carbon may include physical and chemical properties to enhance mechanism of contaminant physisorption and chemisorption including enhanced adsorption kinetics through manipulation of particle surface area, enhanced capacity and selectivity through controlled pore size distribution and enhanced electrostatic and hydrophobic interactions with contaminants. The multi-functional composition may further include a positively-charged nitrogen-functionalized organic compound and/or moieties that improve the activated carbon's ability to sequester contaminants in a subsurface environment.

Abstract: The present disclosure is directed to a multi-functional composition including activated carbon that is useful for injection or other application into soil or groundwater for removal (e.g., via adsorption) of inorganic contaminants in a contaminated plume. The composition of activated carbon may include physical and chemical properties to enhance the mechanism of contaminant physisorption and chemisorption including enhanced electrostatic interactions with contaminants. The multi-functional composition may further include one or more second materials (e.g., contaminant-selective agents) which comprise one or more compounds that improve the activated carbon's ability to sequester or otherwise immobilize inorganic contaminants in a subsurface environment.

Abstract: A sorbent composition for the sequestration of mercury from a gas stream, a method for sequestering mercury from a gas stream and a method for the manufacture of a sorbent composition. The sorbent composition includes a highly porous particulate sorbent and at least two additive components, namely a non-halogen metal compound comprising a metal cation and an inorganic sulfur-containing compound, where at least a portion of the sulfur in the sulfur-containing compound has an oxidation state of equal to or less than +4. The method includes injecting the highly porous particulate sorbent and the two additive components into a gas stream, either discretely or as a single sorbent composition, to sequester mercury in the particulate sorbent. The method has a high degree of efficacy for mercury removal without requiring the addition of halogens to the gas stream.

Abstract: A sorbent composition for the sequestration of mercury from a gas stream, a method for sequestering mercury from a gas stream and a method for the manufacture of a sorbent composition. The sorbent composition includes a highly porous particulate sorbent and at least two additive components, namely a non-halogen metal compound comprising a metal cation and an inorganic sulfur-containing compound, where at least a portion of the sulfur in the sulfur-containing compound has an oxidation state of equal to or less than +4. The method includes injecting the highly porous particulate sorbent and the two additive components into a gas stream, either discretely or as a single sorbent composition, to sequester mercury in the particulate sorbent. The method has a high degree of efficacy for mercury removal without requiring the addition of halogens to the gas stream.

Abstract: Sorbent compositions that includes a base sorbent material having a high porosity and surface area and a boron-selective agent are particularly useful for the sequestration of boron from waste materials such as coal combustion residual leachate (CCRs). By using a boron-selective agent in conjunction with a high surface area base sorbent material such as activated carbon or biochar, a sorbent composition with a high capacity for sequestering boron at relatively low cost is provided.

Abstract: Sorbent compositions that include a base sorbent material having a high porosity and surface area and a boron-selective agent are particularly useful for the sequestration of boron from waste materials such as coal combustion residual leachate (CCRs). By using a boron-selective agent in conjunction with a high surface area base sorbent material such as activated carbon or biochar, a sorbent composition with a high capacity for sequestering boron at relatively low cost is provided.

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., cobalt, ruthenium and copper, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

Abstract: A sorbent composition for the sequestration of mercury from a gas stream, a method for sequestering mercury from a gas stream and a method for the manufacture of a sorbent composition. The sorbent composition includes a highly porous particulate sorbent and at least two additive components, namely a non-halogen metal compound comprising a metal cation and an inorganic sulfur-containing compound, where at least a portion of the sulfur in the sulfur-containing compound has an oxidation state of equal to or less than +4. The method includes injecting the highly porous particulate sorbent and the two additive components into a gas stream, either discretely or as a single sorbent composition, to sequester mercury in the particulate sorbent. The method has a high degree of efficacy for mercury removal without requiring the addition of halogens to the gas stream.

Abstract: Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same thereon. The semi-aqueous compositions contain at least one oxidant, at least one etchant, and at least one organic solvent, may contain various corrosion inhibitors to ensure selectivity.

Abstract: A liquid removal composition and process for removing anti-reflective coating (ARC) material and/or post-etch residue from a substrate having same thereon. The composition achieves at least partial removal of ARC material and/or post-etch residue in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric and nitride-containing materials employed in the semiconductor architecture.

Abstract: A sorbent composition for the removal of boron and/or borates from a fluid such as an aqueous medium. The sorbent composition includes a base sorbent material having a high porosity and surface area, and a boron-selective agent. By using a boron-selective agent in conjunction with a high surface area base sorbent material such as activated carbon or biochar, a sorbent composition with a high capacity for sequestering boron and a relatively low cost is provided. The sorbent compositions are particularly useful for the sequestration of boron from waste materials such as coal combustion residual leachate (CCRs).

Abstract: A liquid removal composition and process for removing anti-reflective coating (ARC) material and/or post-etch residue from a substrate having same thereon. The composition achieves at least partial removal of ARC material and/or post-etch residue in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric and nitride-containing materials employed in the semiconductor architecture.

Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., cobalt, ruthenium and copper, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

Abstract: Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same thereon. The semi-aqueous compositions contain at least one oxidant, at least one etchant, and at least one organic solvent, may contain various corrosion inhibitors to ensure selectivity.

Abstract: This invention is directed to a method for recovering, purifying and recycling an inert gas on a continual basis in connection with a silicon crystal pulling process. Silicon oxide impurities generated during the crystal growth process are completely oxidized by in-situ oxidation with a regulated amount of an oxidizing source gas mixture to form silicon dioxide impurities, which can be removed by a particulate removal device. The particulate-free effluent enters a purification unit to remove the remaining impurities. The inert gas emerging from the purification unit can be fed back into the crystal puller apparatus and/or mixed with the oxidizing source gas mixture. As a result, the ability to increase silicon crystal throughput, quality and at the same time reduce the costs associated with recycling the inert gas can be achieved.

Abstract: This invention is directed to a method for recovering, purifying and recycling an inert gas on a continual basis in connection with a silicon crystal pulling process. Silicon oxide impurities generated during the crystal growth process are completely oxidized by in-situ oxidation with a regulated amount of an oxidizing source gas mixture to form silicon dioxide impurities, which can be removed by a particulate removal device. The particulate-free effluent enters a purification unit to remove the remaining impurities. The inert gas emerging from the purification unit can be fed back into the crystal puller apparatus and/or mixed with the oxidizing source gas mixture. As a result, the ability to increase silicon crystal throughput, quality and at the same time reduce the costs associated with recycling the inert gas can be achieved.