Abstract: A treatment method and a cleaning apparatus for an implant treated with a reagent arc disclosed. The cleaning apparatus for treating an implant treated with a reagent includes: a base; a rotatable rack for placing one or more implants; and a driving mechanism coupled with the rotatable rack.

Abstract: A homogenization field device with low specific on-resistance based on multidimensional coupled voltage dividing mechanism includes a first conductive type semiconductor substrate, a first conductive type well region, a first conductive type semiconductor contact region, a second conductive type drift region, a second conductive type well region, a second conductive type semiconductor contact region, a first dielectric oxide layer, a second dielectric oxide layer, a third dielectric oxide layer, a fourth dielectric oxide layer, a polycrystalline silicon electrode of a floating field plate, a polycrystalline silicon electrode of a control gate, a first layer of metal strips and a second layer of metal strips. The first dielectric oxide layer and the polycrystalline silicon electrode of the floating field plate form a vertical floating field plate, and the first layer of metal strips, the second layer of metal strips and the fourth dielectric oxide layer form a surface fixed dielectric capacitor.