Abstract: An electronic device comprises a source stack comprising one or more conductive materials. A source contact is adjacent to the source stack and a source seal is on a portion of the source contact. Tiers of alternating conductive materials and dielectric materials are adjacent to the source contact. Pillars extend through the tiers and the source contact and into the source stack. Additional electronic devices, electronic systems, and methods of forming the electronic devices are disclosed.

Abstract: An information handling system includes a printed circuit board. The printed circuit board includes first and second pads of a first differential pair, a hatched ground, and first and second traces of a second differential pair. The first and second pads of the first differential pair are routed a surface of the printed circuit board. The hatched ground routed within a first layer of the printed circuit board. The first and second traces of the second differential pair are routed below the first and second pads and the hatched ground within a second layer of the printed circuit board. The hatched ground dampens crosstalk between signals on the traces and signals on the differential pair pads.

Abstract: An information handling system includes first and second differential pairs on a printed circuit board. The first differential pair includes first and second traces, and first and second sets of impedance compensation traces. The first impedance compensation traces are routed only on an inner-side of the first trace. The second impedance compensation traces are routed only on an inner-side of the second trace, and the first and second impedance compensation traces are substantially aligned. The second differential pair includes third and fourth traces and third and fourth sets of impedance compensation traces. The third set of impedance compensation traces are routed only on an inner-side of the third trace. The fourth impedance compensation traces are routed only on an inner-side of the fourth trace, and the third and fourth impedance compensation traces are substantially aligned.

Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating first tiers and second tiers. A first insulator tier is above the stack. First insulator material of the first insulator tier comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Channel-material strings are in the stack and in the first insulator tier. Conducting material is in the first insulator tier directly against sides of individual of the channel-material strings. A second insulator tier is formed above the first insulator tier and the conducting material. Second insulator material of the second insulator tier comprises at least one of the (a) and the (b). Conductive vias are formed and extend through the second insulator tier and that are individually directly electrically coupled to the individual channel-material strings through the conducting material.

Abstract: A circuit board may include a traditional via electrically coupled to a first layer of the circuit board and coupled to a second layer of the circuit board and a slotted via formed within the circuit board proximate to the traditional via, the slotted via comprising an opening through a first surface and a second surface of the circuit board and a layer of conductive material formed on interior walls of the opening.

Abstract: Integrated circuitry comprising a memory array comprises strings of memory cells comprising laterally-spaced memory blocks individually comprising a first vertical stack comprising alternating insulative tiers and conductive tiers. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers. The conductive tiers individually comprise a horizontally-elongated conductive line. A second vertical stack is aside the first vertical stack. The second vertical stack comprises an upper portion and a lower portion. The upper portion comprises vertically alternating first tiers and second insulating tiers that are of different composition relative one another. The lower portion comprises an upper polysilicon-comprising layer, a lower polysilicon-comprising layer, an intervening-material layer vertically between the upper and lower polysilicon-comprising layers.

Abstract: A circuit board may include a traditional via electrically coupled to a first layer of the circuit board and coupled to a second layer of the circuit board and a slotted via formed within the circuit board proximate to the traditional via, the slotted via comprising an opening through a first surface and a second surface of the circuit board and a layer of conductive material formed on interior walls of the opening.

Abstract: A microelectronic device comprises a stack structure comprising insulative structures vertically interleaved with conductive structures, first support pillar structures vertically extending through the stack structure in a first staircase region including steps defined at edges of tiers of the insulative structures and conductive structures, and second support pillar structures vertically extending through the stack structure in a second staircase region including additional steps defined at edges of additional tiers of the insulative structures and conductive structures, the second support pillar structures having a smaller cross-sectional area than the first support pillar structures. Related memory devices, electronic systems, and methods are also described.

Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating first tiers and second tiers. A first insulator tier is above the stack. First insulator material of the first insulator tier comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Channel-material strings are in the stack and in the first insulator tier. Conducting material is in the first insulator tier directly against sides of individual of the channel-material strings. A second insulator tier is formed above the first insulator tier and the conducting material. Second insulator material of the second insulator tier comprises at least one of the (a) and the (b). Conductive vias are formed and extend through the second insulator tier and that are individually directly electrically coupled to the individual channel-material strings through the conducting material.

Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating first tiers and second tiers. A first insulator tier is above the stack. First insulator material of the first insulator tier comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Channel-material strings are in the stack and in the first insulator tier. Conducting material is in the first insulator tier directly against sides of individual of the channel-material strings. A second insulator tier is formed above the first insulator tier and the conducting material. Second insulator material of the second insulator tier comprises at least one of the (a) and the (b). Conductive vias are formed and extend through the second insulator tier and that are individually directly electrically coupled to the individual channel-material strings through the conducting material.

Abstract: A system for data communications, comprising an upstream component configured to select an in-band peripheral component interconnect express (PCIe) equalization procedure or an out-of-band PCIe equalization procedure and a downstream component configured to respond to the selected one of the in-band PCIe equalization procedure or the out-of-band PCIe equalization procedure to enable PCIe communications with the upstream component.

Abstract: A method used in forming a memory array comprises forming a stack comprising vertically-alternating first tiers and second tiers. A first insulator tier is above the stack. First insulator material of the first insulator tier comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Channel-material strings are in the stack and in the first insulator tier. Conducting material is in the first insulator tier directly against sides of individual of the channel-material strings. A second insulator tier is formed above the first insulator tier and the conducting material. Second insulator material of the second insulator tier comprises at least one of the (a) and the (b). Conductive vias are formed and extend through the second insulator tier and that are individually directly electrically coupled to the individual channel-material strings through the conducting material.

Abstract: A system for data communications, comprising an upstream component configured to select an in-band peripheral component interconnect express (PCIe) equalization procedure or an out-of-band PCIe equalization procedure and a downstream component configured to respond to the selected one of the in-band PCIe equalization procedure or the out-of-band PCIe equalization procedure to enable PCIe communications with the upstream component.

Abstract: A method of metal-assisted chemical etching comprises forming an array of discrete metal features on a surface of a semiconductor structure, where each discrete metal feature comprises a porous metal body with a plurality of pores extending therethrough and terminating at the surface of the semiconductor structure. The semiconductor structure is exposed to an etchant, and the discrete metal features sink into the semiconductor structure as metal-covered surface regions are etched. Simultaneously, uncovered surface regions are extruded through the pores to form anchoring structures for the discrete metal features. The anchoring structures inhibit detouring or delamination of the discrete metal features during etching. During continued exposure to the etchant, the anchoring structures are gradually removed, leaving an array of holes in the semiconductor structure.

Abstract: A method of metal-assisted chemical etching comprises forming an array of discrete metal features on a surface of a semiconductor structure, where each discrete metal feature comprises a porous metal body with a plurality of pores extending therethrough and terminating at the surface of the semiconductor structure. The semiconductor structure is exposed to an etchant, and the discrete metal features sink into the semiconductor structure as metal-covered surface regions are etched. Simultaneously, uncovered surface regions are extruded through the pores to form anchoring structures for the discrete metal features. The anchoring structures inhibit detouring or delamination of the discrete metal features during etching. During continued exposure to the etchant, the anchoring structures are gradually removed, leaving an array of holes in the semiconductor structure.