Patents by Inventor Lingyun Jia
Lingyun Jia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11776807Abstract: Methods for controlling the formation of oxygen containing thin films, such as silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that comprises oxygen and a second reactant that does not include oxygen. In some embodiments the plasma power can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features.Type: GrantFiled: October 22, 2021Date of Patent: October 3, 2023Assignee: ASM IP Holding, B.V.Inventors: Lingyun Jia, Viljami J. Pore, Marko Tuominen, Sun Ja Kim, Oreste Madia
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Patent number: 11728164Abstract: Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.Type: GrantFiled: October 11, 2021Date of Patent: August 15, 2023Assignee: ASM IP HOLDING B.V.Inventors: Eva Tois, Viljami Pore, Suvi Haukka, Toshiya Suzuki, Lingyun Jia, Sun Ja Kim, Oreste Madia
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Patent number: 11501965Abstract: Methods for depositing oxide thin films, such as metal oxide, metal silicates, silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first reactant that comprises oxygen and a component of the oxide, and a second reactant comprising reactive species that does not include oxygen species. In some embodiments the plasma power used to generate the reactive species can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features. In some embodiments oxide thin films are selectively deposited on a first surface of a substrate relative to a second surface, such as on a dielectric surface relative to a metal or metallic surface.Type: GrantFiled: May 4, 2018Date of Patent: November 15, 2022Assignee: ASM IP HOLDING B.V.Inventors: Lingyun Jia, Viljami J. Pore, Marko Tuominen, Sun Ja Kim, Oreste Madia, Eva Tois, Suvi Haukka, Toshiya Suzuki
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Publication number: 20220076949Abstract: Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.Type: ApplicationFiled: October 11, 2021Publication date: March 10, 2022Inventors: Eva Tois, Viljami Pore, Suvi Haukka, Toshiya Suzuki, Lingyun Jia, Sun Ja Kim, Oreste Madia
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Publication number: 20220044931Abstract: Methods for controlling the formation of oxygen containing thin films, such as silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that comprises oxygen and a second reactant that does not include oxygen. In some embodiments the plasma power can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features.Type: ApplicationFiled: October 22, 2021Publication date: February 10, 2022Inventors: Lingyun Jia, Viljami J. Pore, Marko Tuominen, Sun Ja Kim, Oreste Madia
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Patent number: 11170993Abstract: Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.Type: GrantFiled: May 3, 2018Date of Patent: November 9, 2021Assignee: ASM IP HOLDING B.V.Inventors: Eva Tois, Viljami Pore, Suvi Haukka, Toshiya Suzuki, Lingyun Jia, Sun Ja Kim, Oreste Madia
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Patent number: 11158500Abstract: Methods for controlling the formation of oxygen containing thin films, such as silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that comprises oxygen and a second reactant that does not include oxygen. In some embodiments the plasma power can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features.Type: GrantFiled: May 3, 2018Date of Patent: October 26, 2021Assignee: ASM IP HOLDING B.V.Inventors: Lingyun Jia, Viljami J. Pore, Marko Tuominen, Sun Ja Kim, Oreste Madia
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Patent number: 10991573Abstract: Plasma enhanced atomic layer deposition (PEALD) processes for simultaneously depositing SiOC on two or more different surfaces of a substrate are provided. For example, SiOC may be deposited simultaneously on a first dielectric surface and a second metal or metallic surface. The PEALD processes can comprise two or more deposition cycles for forming SiOC on the two surfaces. The deposition cycles may comprise alternately and sequentially contacting the substrate with a first precursor comprising silicon and a second plasma reactant, such as an Ar/H2 plasma. In some embodiments, a PEALD process further comprises contacting the substrate with a plasma reactant prior to beginning the deposition cycle. In some embodiments, the deposition cycle is repeated more than 500 times and a uniform SiOC film may be formed on the two different surfaces.Type: GrantFiled: December 3, 2018Date of Patent: April 27, 2021Assignee: ASM IP HOLDING B.V.Inventors: Lingyun Jia, Viljami Pore, Eva Tois, Sun Ja Kim
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Publication number: 20200395211Abstract: Methods for controlling the formation of oxygen containing thin films, such as silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that comprises oxygen and a second reactant that does not include oxygen. In some embodiments the plasma power can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features.Type: ApplicationFiled: May 3, 2018Publication date: December 17, 2020Inventors: Lingyun Jia, Viljami J. Pore, Marko Tuominen, Sun Ja Kim, Oreste Madia
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Publication number: 20200066512Abstract: Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.Type: ApplicationFiled: May 3, 2018Publication date: February 27, 2020Inventors: Eva Tois, Viljami Pore, Suvi Haukka, Toshiya Suzuki, Lingyun Jia, Sun Ja Kim, Oreste Madia
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Publication number: 20190172701Abstract: Plasma enhanced atomic layer deposition (PEALD) processes for simultaneously depositing SiOC on two or more different surfaces of a substrate are provided. For example, SiOC may be deposited simultaneously on a first dielectric surface and a second metal or metallic surface. The PEALD processes can comprise two or more deposition cycles for forming SiOC on the two surfaces. The deposition cycles may comprise alternately and sequentially contacting the substrate with a first precursor comprising silicon and a second plasma reactant, such as an Ar/H2 plasma. In some embodiments, a PEALD process further comprises contacting the substrate with a plasma reactant prior to beginning the deposition cycle. In some embodiments, the deposition cycle is repeated more than 500 times and a uniform SiOC film may be formed on the two different surfaces.Type: ApplicationFiled: December 3, 2018Publication date: June 6, 2019Inventors: Lingyun Jia, Viljami Pore, Eva Tois, Sun Ja Kim
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Publication number: 20180350587Abstract: Methods for depositing oxide thin films, such as metal oxide, metal silicates, silicon oxycarbide (SiOC) and silicon oxycarbonitride (SiOCN) thin films, on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first reactant that comprises oxygen and a component of the oxide, and a second reactant comprising reactive species that does not include oxygen species. In some embodiments the plasma power used to generate the reactive species can be selected from a range to achieve a desired step coverage or wet etch rate ratio (WERR) for films deposited on three dimensional features. In some embodiments oxide thin films are selectively deposited on a first surface of a substrate relative to a second surface, such as on a dielectric surface relative to a metal or metallic surface.Type: ApplicationFiled: May 4, 2018Publication date: December 6, 2018Inventors: Lingyun Jia, Viljami J. Pore, Marko Tuominen, Sun Ja Kim, Oreste Madia, Eva Tois, Suvi Haukka, Toshiya Suzuki