Patents by Inventor Linh Dang

Linh Dang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TANDEM BIO-ORGANIC LIGHT-EMITTING DIODE FOR PHOTODYNAMIC THERAPY AND PHOTODYNAMIC APPARATUS COMPRISING SAME
    Publication number: 20230046173
    Abstract: The present invention is directed to a tandem-structured bio-organic light emitting diode (bio-OLED) for photodynamic therapy, and to a photodynamic therapy device including the same to convert a red light emitted from the bio-organic light emitting diode into a near-infrared light (NIR) emission, thereby enabling the use of a PBM therapy in a wide wavelength range of 600 to 1,000 nm.
    Type: Application
    Filed: August 6, 2021
    Publication date: February 16, 2023
    Inventors: Deok Su JO, Ho Kyoon CHUNG, Sung Min CHO, Min Jung KIM, Thi My Linh DANG, Thien Tri TRAN
  • High electron mobility transistor semiconductor device and fabrication method thereof
    Patent number: 7709860
    Abstract: In a method of forming a semiconductor device on a semiconductor substrate (100), a photoresist layer (102) is deposited on the semiconductor substrate; a window (106) is formed in the photoresist layer (102) by electron beam lithography; a conformal layer (108) is deposited on the photoresist layer (102) and in the window (106); and substantially all of the conformal layer (108) is selectively removed from the photoresist layer (102) and a bottom portion of the window to form dielectric sidewalls (110) in the window (106).
    Type: Grant
    Filed: April 29, 2009
    Date of Patent: May 4, 2010
    Assignee: Northrop Grumman Space & Mission Systems Corp.
    Inventors: Linh Dang, Wayne Yoshida, Xiaobing Mei, Jennifer Wang, Po-Hsin Liu, Jane Lee, Weidong Liu, Michael Barsky, Richard Lai
  • High electron mobility transistor semiconductor device and fabrication method thereof
    Patent number: 7582518
    Abstract: In a method of forming a semiconductor device on a semiconductor substrate (100), a photoresist layer (102) is deposited on the semiconductor substrate; a window (106) is formed in the photoresist layer (102) by electron beam lithography; a conformal layer (108) is deposited on the photoresist layer (102) and in the window (106); and substantially all of the conformal layer (108) is selectively removed from the photoresist layer (102) and a bottom portion of the window to form dielectric sidewalls (110) in the window (106).
    Type: Grant
    Filed: November 14, 2006
    Date of Patent: September 1, 2009
    Assignee: Northrop Grumman Space & Mission Systems Corp.
    Inventors: Linh Dang, Wayne Yoshida, Gerry Mei, Jennifer Wang, Po-Hsin Liu, Jane Lee, Weidong Liu, Mike Barsky, Rich Lai
  • HIGH ELECTRON MOBILITY TRANSISTOR SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
    Publication number: 20090206369
    Abstract: In a method of forming a semiconductor device on a semiconductor substrate (100), a photoresist layer (102) is deposited on the semiconductor substrate; a window (106) is formed in the photoresist layer (102) by electron beam lithography; a conformal layer (108) is deposited on the photoresist layer (102) and in the window (106); and substantially all of the conformal layer (108) is selectively removed from the photoresist layer (102) and a bottom portion of the window to form dielectric sidewalls (110) in the window (106).
    Type: Application
    Filed: April 29, 2009
    Publication date: August 20, 2009
    Applicant: NORTHROP GRUMMAN SPACE & MISSION SYSTEMS CORP.
    Inventors: Linh Dang, Wayne Yoshida, Xiaobing Mei, Jennifer Wang, Po-Hsin Liu, Jane Lee, Weidong Liu, Michael Barsky, Richard Lai
  • High electron mobility transistor semiconductor device and fabrication method thereof
    Publication number: 20080111157
    Abstract: In a method of forming a semiconductor device on a semiconductor substrate (100), a photoresist layer (102) is deposited on the semiconductor substrate; a window (106) is formed in the photoresist layer (102) by electron beam lithography; a conformal layer (108) is deposited on the photoresist layer (102) and in the window (106); and substantially all of the conformal layer (108) is selectively removed from the photoresist layer (102) and a bottom portion of the window to form dielectric sidewalls (110) in the window (106).
    Type: Application
    Filed: November 14, 2006
    Publication date: May 15, 2008
    Applicant: Northrop Grumman Corporation
    Inventors: Linh Dang, Wayne Yoshida, Xiaobing Mei, Jennifer Wang, Po-Hsin Liu, Jane Lee, Weidong Liu, Michael Barsky, Richard Lai