Patents by Inventor Linh H Thanh

Linh H Thanh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ammonia-based plasma treatment for metal fill in narrow features
    Patent number: 8551880
    Abstract: A method for fabricating a semiconductor device is described. A substrate is provided having a patterned dielectric layer disposed thereon. A trench is formed in the dielectric layer. The surfaces of the trench are treated with an ammonia-based plasma process. A metal layer is then formed in the trench.
    Type: Grant
    Filed: October 31, 2008
    Date of Patent: October 8, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Bencherki Mebarki, Amit Khandelwal, Linh H. Thanh
  • AMMONIA-BASED PLASMA TREATMENT FOR METAL FILL IN NARROW FEATURES
    Publication number: 20090117736
    Abstract: A method for fabricating a semiconductor device is described. A substrate is provided having a patterned dielectric layer disposed thereon. A trench is formed in the dielectric layer. The surfaces of the trench are treated with an ammonia-based plasma process. A metal layer is then formed in the trench.
    Type: Application
    Filed: October 31, 2008
    Publication date: May 7, 2009
    Inventors: Bencherki Mebarki, Amit Khandewal, Linh H. Thanh
  • Method for forming silicon containing layers on a substrate
    Patent number: 6656840
    Abstract: A method for forming a microelectronics device is disclosed. In one embodiment, the method includes depositing a conductive structure on a substrate. A first layer comprising silicon and nitrogen is formed on the substrate. A second layer comprising silicon and nitrogen is then formed on the first layer. The nitrogen to silicon ratio in the first layer is greater than the nitrogen to silicon ratio in the second layer.
    Type: Grant
    Filed: April 29, 2002
    Date of Patent: December 2, 2003
    Assignee: Applied Materials Inc.
    Inventors: Nagarajan Rajagopalan, Joe Feng, Christopher S Ngai, Meiyee (Maggie Le) Shek, Suketu A Parikh, Linh H Thanh
  • METHOD FOR FORMING SILICON CONTAINING LAYERS ON A SUBSTRATE
    Publication number: 20030203614
    Abstract: A method for forming a microelectronics device is disclosed. In one embodiment, the method includes depositing a conductive structure on a substrate. A first layer comprising silicon and nitrogen is formed on the substrate. A second layer comprising silicon and nitrogen is then formed on the first layer. The nitrogen to silicon ratio in the first layer is greater than the nitrogen to silicon ratio in the second layer.
    Type: Application
    Filed: April 29, 2002
    Publication date: October 30, 2003
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Nagarajan Rajagopalan, Joe Feng, Christopher S. Ngai, Meiyee Shek, Suketu A. Parikh, Linh H. Thanh