Abstract: A ribbon carrier assembly, a welding device, and a welding method for preprocessing between a battery sheet and a ribbon are disclosed. The carrier assembly includes a carrier seat; a carrier body, rotatably connected to the carrier seat; and a driving assembly, connected to the carrier body and configured to control the rotation of the carrier body. At least one operation surface is arranged on the carrier body and is arranged as a curved surface. Adsorption holes are arranged on the operation surface. The battery sheet is adsorbed and fixed to the operation surface by applying a negative pressure to the adsorption holes. Through tins, dry joints between the battery sheet and the ribbon can be reduced during welding of the ribbon and the battery sheet. The battery sheet is bent on the curved surface to avoid warping or cracking of the battery sheet caused by excessive heating.

Abstract: The present disclosure relates to a single crystal furnace, which includes a main furnace body, an accessory furnace body, a furnace cover, and a driving component. The accessory furnace body is provided with a first connecting member. The furnace cover is provided with a second connecting member. The driving component can drive the first connecting member or the second connecting member to move, so as to match the first connecting member with the second connecting member, and connect the accessory furnace body with the furnace cover.

Abstract: A heat exchange device for a single crystal furnace is provided, including a heat exchanger on which an inner chamber for heat exchange defined in a shape of circular truncated cone is formed. A convex portion is defined by a chamber wall of the inner chamber for heat exchange partially projecting along a radial direction of the inner chamber for heat exchange, the convex portion extends along a direction of an axis of the inner chamber for heat exchange, and a minimum distance between an end away from the chamber wall of the inner chamber for heat exchange of the convex portion and the axis of the inner chamber for heat exchange is denoted as L, which is greater than or equal to a minimum radius of a cross section of the inner chamber for heat exchange.

Abstract: The present disclosure relates to a single crystal furnace, which includes a main furnace body, an accessory furnace body, a furnace cover, and a driving component. The accessory furnace body is provided with a first connecting member. The furnace cover is provided with a second connecting member. The driving component can drive the first connecting member or the second connecting member to move, so as to match the first connecting member with the second connecting member, and connect the accessory furnace body with the furnace cover.

Abstract: A magnet coil for magnetic Czochralski single crystal growth includes: a first coil, a second coil, and an auxiliary coil arranged between the first coil and the second coil. A distance between the first coil and a first edge of the auxiliary coil close to the first coil is equal to a distance between the second coil and a second edge of the auxiliary coil close to the second coil. The auxiliary coil, the first coil and the second coil have a common central axis. When being energized, a direction of a current in the first coil is opposite to a direction of a current in the second coil, and a magnetic field generated by a current in the auxiliary coil is used for enhancing a cusp magnetic field between the first coil and the second coil.

Abstract: A heating body of an epitaxial growth device is provided. The heating body (1) includes a supporting base (11) and a tray (2). The supporting base (11) extends along an axis of the epitaxial growth device (100). The tray (2) is mounted on the supporting base (11) to support a substrate. The supporting base (11) is configured to generate heat by an electromagnetic induction with an induction coil, which in turn heats the tray (2). The tray (2) is configured to transfer heat to the substrate to heat the substrate. The supporting base (11) is provided with a temperature control channel (3), which is close to an edge of the tray (2), and along a direction perpendicular to a surface of the supporting base (11), a part of a projection of the temperature control channel (3) is on the tray (2).

Abstract: An epitaxial growth device is provided, which includes an induction coil and a reaction body, and the induction coil is disposed along a circumferential direction of the reaction body; and the reaction body includes a heating base and a plurality of trays, wherein the heating base includes a plurality of workspaces, the plurality of trays are disposed in the plurality of workspaces, respectively, and each of the plurality of trays is disposed in a corresponding workspace; wherein each of the plurality of trays is configured to support a substrate, and each of the plurality of trays is capable of independently rotating relative to the heating base.

Abstract: A magnet coil for magnetic Czochralski single crystal growth includes: a first coil a second coil, and an auxiliary coil arranged between the first coil and the second coil. A distance between the first coil and a first edge of the auxiliary coil close to the first coil is equal to a distance between the second coil and a second edge of the auxiliary coil close to the second coil. The auxiliary coil, the first coil and the second coil have a common. When being energized, a direction of a current in the first coil is opposite to a direction of a current in the second coil, and a magnetic field generated by a current in the auxiliary coil is used for enhancing the a cusp magnetic field between the first coil and the second coil.

Abstract: The present invention aims at providing an auxiliary heating device for a zone melting furnace and a heat preservation method for a single crystal rod thereof. The auxiliary heating device comprises an auxiliary heater disposed below a high-frequency heating coil inside the zone melting furnace and is formed by winding a hollow metal circular pipe. The winding start end of the auxiliary heater is positioned on the upper part, the winding stop end of the auxiliary heating device is positioned on the lower part, and an upper end part and a lower end part are respectively guided out from the both ends; and a hollow cylindrical heating load is disposed on the inner side of the auxiliary heater, and an insulation part is disposed between the heating load and the auxiliary heater. The present invention can solve the problem of single crystal rod cracking caused by unreasonable distribution of the thermal field and overlarge thermal stress in the growth process of zone-melted silicon single crystals over 6.5 inches.

Abstract: The present invention aims at providing a zone melting furnace thermal field with a dual power heating function and a heat preservation method. The zone melting furnace thermal field comprises a primary heating coil and an auxiliary heater, wherein the auxiliary heater has a wavy appearance bent repeatedly up and down and forms a circular loop by surrounding in the horizontal direction, wherein both end parts of the auxiliary heater are provided with ports and are connected with an auxiliary heating power supply through cables; and the auxiliary heating power supply is also sequentially connected with a data analysis module and an infrared temperature measuring instrument through single lines. The present invention can solve the problem of single crystal rod cracking caused by unreasonable distribution of the thermal field and overlarge thermal stress in the growth process of zone-melted silicon single crystals over 6.

Abstract: The present invention aims at providing a zone melting furnace thermal field with a dual power heating function and a heat preservation method. The zone melting furnace thermal field comprises a primary heating coil and an auxiliary heater, wherein the auxiliary heater has a wavy appearance bent repeatedly up and down and forms a circular loop by surrounding in the horizontal direction, wherein both end parts of the auxiliary heater are provided with ports and are connected with an auxiliary heating power supply through cables; and the auxiliary heating power supply is also sequentially connected with a data analysis module and an infrared temperature measuring instrument through single lines. The present invention can solve the problem of single crystal rod cracking caused by unreasonable distribution of the thermal field and overlarge thermal stress in the growth process of zone-melted silicon single crystals over 6.

Abstract: The present invention aims at providing an auxiliary heating device for a zone melting furnace and a heat preservation method for a single crystal rod thereof. The auxiliary heating device comprises an auxiliary heater disposed below a high-frequency heating coil inside the zone melting furnace and is formed by winding a hollow metal circular pipe. The winding start end of the auxiliary heater is positioned on the upper part, the winding stop end of the auxiliary heating device is positioned on the lower part, and an upper end part and a lower end part are respectively guided out from the both ends; and a hollow cylindrical heating load is disposed on the inner side of the auxiliary heater, and an insulation part is disposed between the heating load and the auxiliary heater. The present invention can solve the problem of single crystal rod cracking caused by unreasonable distribution of the thermal field and overlarge thermal stress in the growth process of zone-melted silicon single crystals over 6.5 inches.