Patents by Inventor Linlin Sun

Linlin Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200343100
    Abstract: A semiconductor device and its fabrication method are provided. The method includes forming a core layer on a first region of a base substrate layer; forming sidewall spacer layers on sidewalls of two sides of the core layer along a first direction; forming a filling layer on a second region between adjacent sidewall spacer layers which are arranged along the first direction; forming a first dividing trench in the filling layer on the second region to divide the filling layer along a second direction, where sidewalls of the first dividing trench, arranged along the first direction, expose corresponding sidewall spacer layers; forming a second dividing trench in the core layer to divide the core layer along the second direction; forming a second dividing layer in the second dividing trench when forming a first dividing layer in the first dividing trench; and removing the filling layer and the core layer.
    Type: Application
    Filed: April 22, 2020
    Publication date: October 29, 2020
    Inventors: Linlin SUN, Bo SU
  • Publication number: 20200328133
    Abstract: Embodiments of the disclosure provide a semiconductor device, a semiconductor chip and a method of manufacturing a semiconductor device, wherein the semiconductor device, includes a substrate, a semiconductor layer formed on the substrate, a plurality of gates, drains, and a plurality of sources formed on a side of the semiconductor layer away from the substrate, the gates located between the sources and the drains, and the gates, sources, and drains located in an active region of the semiconductor device, wherein a gate pitch is formed between any two adjacent gates, the formed respective gate pitches include at least two unequal gate pitches, the maximum gate pitch of the respective gate pitches is within a first preset range determined according to a pitch of two gates at the two outermost ends in the semiconductor device in the gate length direction and a total number of gates of the semiconductor device.
    Type: Application
    Filed: April 25, 2019
    Publication date: October 15, 2020
    Inventors: Yi PEI, Gouchun KANG, Linlin SUN
  • Publication number: 20200207773
    Abstract: Provided is a FGFR inhibitor, designating a compound represented by formula (I) or a pharmaceutically acceptable salt thereof. Also provided is the application of a drug for treating solid tumors, such as FGFR related diseases.
    Type: Application
    Filed: August 15, 2018
    Publication date: July 2, 2020
    Inventors: Yikai WANG, Yang ZHANG, Zhengxia CHEN, Linlin CHEN, Tao FENG, Rongxin HUANG, Qiu LI, Deyao LI, Jikui SUN, Yangyang XU, Jie LI, Jian LI, Shuhui CHEN
  • Patent number: 10350900
    Abstract: A method for responding to read/write consumable volume information in an imaging device.
    Type: Grant
    Filed: July 17, 2017
    Date of Patent: July 16, 2019
    Inventors: Xuejin Sun, Linlin Zhang, Chaoai Deng
  • Publication number: 20170202783
    Abstract: Nanoparticulate carrier formulations are useful to solubilize, deliver, and target hydrophobic drugs for treating diseases including cancer and bacterial infections. The formulations contain amphiphilic peptides having a hydrophobic portion and a positively charged hydrophilic portion. The peptides self-associate at nonacidic pH to form mi-celles with a spherical nanoparticle morphology. The hydrophobic core of the nano-particles encapsulates hydrophobic drugs, including antitumor agents, increasing their solubility in water and allowing them to be targeted, for example, to cancer cells. The positively charged surface of the nanoparticles, together with an optional targeting moiety such as an RGD peptide, allows the nanoparticles to bind selectively to mammalian cells and bacterial cells, including cancer cells that overexpress integrin receptors.
    Type: Application
    Filed: July 8, 2015
    Publication date: July 20, 2017
    Inventors: Run CHANG, Linlin SUN, Thomas Jay WEBSTER, Gujie MI
  • Patent number: 9695164
    Abstract: The present invention relates to crystalline forms of pyrroloquinoline quinone disodium salt. The present invention provides crystalline Form A and crystalline Form B of pyrroloquinoline quinone disodium salt, and the methods and uses for the preparation thereof. The X-ray powder diffraction patterns of crystalline Form A and crystalline Form B are as shown by FIG. 1 and FIG. 5, respectively. The crystalline forms of the present invention have low moisture absorption and high stability, as well as excellent use and storage performances.
    Type: Grant
    Filed: September 10, 2013
    Date of Patent: July 4, 2017
    Assignee: Zhucheng Haotian Pharm Co., Ltd.
    Inventors: Liping Zhu, Liye Lu, Jianrong Wang, Linlin Sun, Xuefeng Mei, Jianxin Gu