Abstract: A process for forming an organic electronic device includes the steps of: (a) forming a first conductive member and a conductive lead over a substrate, wherein the first conductive member and conductive lead are spaced apart from each other; (b) forming an organic layer over the substrate, the first conductive member, and the conductive lead; (c) forming a patterned conductive layer over the organic layer, wherein the patterned conductive layer includes a second conductive member, and the patterned conductive layer creates an exposed portion of the organic layer and an unexposed portion of the organic layer; and (d) dry etching at least the exposed portion of the organic layer to expose a portion of the conductive lead using at least one oxygen-containing gas, wherein dry etching is performed at a pressure in a range of approximately 0.01 to 7.5 mTorr.