Patents by Inventor Linrun FENG

Linrun FENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220123241
    Abstract: Described is a flowable preparation for depositing a passivation layer on an organic electronic (OE) device containing an organic layer; the organic layer is selected from an organic semiconductor (OSC) layer and an organic gate insulator (OGI) layer; the preparation comprises a passivating material and a solvent; the solvent includes lactate and/or derivatives thereof. Further described are an OE device and a manufacture method therefor.
    Type: Application
    Filed: January 7, 2020
    Publication date: April 21, 2022
    Inventors: Linrun FENG, Zhe LIU, Kiron Prabha RAJEEV, Simon Dominic OGIER, Shashi Urvish PANDYA
  • Patent number: 10199406
    Abstract: An array substrate and a manufacturing method thereof, a display panel and a display device are provided. The array substrate manufacturing method comprises: forming a source electrode and a drain electrode on a gate insulating layer; forming photoresist above the gate insulating layer and the source electrode and the drain electrode; etching the photoresist to form an opening region so as to expose the gate insulating layer between the source electrode and the drain electrode, and a part of the source electrode and a part of the drain electrode; and forming an active layer in the opening region, the active layer covering the exposed gate insulating layer, the part of the source electrode and the part of the drain electrode.
    Type: Grant
    Filed: June 7, 2016
    Date of Patent: February 5, 2019
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., SHANGHAI JIAO TONG UNIVERSITY
    Inventors: Wei Huang, Jiaqing Zhao, Linrun Feng, Wei Tang, Xiaojun Guo
  • Patent number: 10141530
    Abstract: This invention provides a thin film transistor and a manufacturing method thereof, an array substrate, and a display apparatus. This thin film transistor comprises an organic semiconductor layer and a source drain electrode layer, and further comprises a metal oxide insulating layer, wherein the metal oxide insulating layer is provided between the organic semiconductor layer and the source drain electrode layer and has a work function higher than that of the source drain electrode layer. In the thin film transistor provided by this invention, the metal oxide insulating layer having a higher work function can generate an interface dipole barrier so as to reduce the difficulty for the carriers in the source drain electrode to enter the organic semiconductor layer and thereby it is possible to decrease the contact resistance between the source drain electrode layer and the semiconductor layer and improve electrical properties of the thin film transistor.
    Type: Grant
    Filed: November 5, 2015
    Date of Patent: November 27, 2018
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., SHANGHAI JIAO TONG UNIVERSITY
    Inventors: Wei Huang, Jiaqing Zhao, Wei Tang, Linrun Feng, Xiaojun Guo
  • Publication number: 20170149003
    Abstract: This invention provides a thin film transistor and a manufacturing method thereof, an array substrate, and a display apparatus. This thin film transistor comprises an organic semiconductor layer and a source drain electrode layer, and further comprises a metal oxide insulating layer, wherein the metal oxide insulating layer is provided between the organic semiconductor layer and the source drain electrode layer and has a work function higher than that of the source drain electrode layer. In the thin film transistor provided by this invention, the metal oxide insulating layer having a higher work function can generate an interface dipole barrier so as to reduce the difficulty for the carriers in the source drain electrode to enter the organic semiconductor layer and thereby it is possible to decrease the contact resistance between the source drain electrode layer and the semiconductor layer and improve electrical properties of the thin film transistor.
    Type: Application
    Filed: November 5, 2015
    Publication date: May 25, 2017
    Inventors: Wei Huang, Jiaqing Zhao, Wei Tang, Linrun Feng, Xiaojun Guo
  • Publication number: 20170025449
    Abstract: An array substrate and a manufacturing method thereof, a display panel and a display device are provided. The array substrate manufacturing method comprises: forming a source electrode and a drain electrode on a gate insulating layer; forming photoresist above the gate insulating layer and the source electrode and the drain electrode; etching the photoresist to form an opening region so as to expose the gate insulating layer between the source electrode and the drain electrode, and a part of the source electrode and a part of the drain electrode; and forming an active layer in the opening region, the active layer covering the exposed gate insulating layer, the part of the source electrode and the part of the drain electrode.
    Type: Application
    Filed: June 7, 2016
    Publication date: January 26, 2017
    Inventors: Wei HUANG, Jiaqing ZHAO, Linrun FENG, Wei TANG, Xiaojun GUO