Abstract: A method of isolating piezoelectric thin film acoustic resonator devices to prevent laterally propagating waves generated by the device from leaving the device and/or interfering with adjacent devices or systems. Specifically, this isolation technique involves the manipulation or isolation of the piezoelectric material layer between the acoustic resonator devices, in an effort to limit the amount of acoustic energy which propagates in a lateral direction away from the device. In one aspect, at least a portion of the piezoelectric material not involved in signal transmission by transduction between RF and acoustic energy is removed from the device. In another aspect, the growth a piezoelectric material is limited to certain regions during fabrication of the device. In a further aspect, the crystal orientation of the piezoelectric material is disrupted or altered during device fabrication so as to form regions having excellent piezoelectric properties and regions exhibiting poor piezoelectric characteristics.

Abstract: Forming a thin film acoustic device by patterning a layer of non-conducting material on a first side of a substrate to expose a portion of the first substrate side; depositing layers of conducting material on the layer of non-conducting material and the exposed portion of the first substrate side; depositing a layer of piezoelectric material on the layers of conducting material; depositing and patterning additional layers of material on the layer of piezoelectric material to form a first device electrode; depositing and patterning a masking layer on a second side of the substrate to expose a portion of the second substrate side; etching away the exposed substrate portion to expose the patterned layer of non-conducting material and a portion of the layers of conducting material; and etching away the exposed portion of the layers of conducting material to form a second device electrode.

Abstract: Methods for fabricating robust films across a patterned underlying layer's edges or steps are disclosed. The novel methods diminish the negative effects of electrode steps or edges on the integrity of a membrane. Thus, the methods are particularly applicable to membrane release technology. The height of the step or edge is eliminated or reduced to increase the mechanical integrity of the film.

Abstract: Methods for fabricating robust films across a patterned underlying layer's edges or steps are disclosed. The novel methods diminish the negative effects of electrode steps or edges on the integrity of a membrane. Thus, the methods are particularly applicable to membrane release technology. The height of the step or edge is eliminated or reduced to increase the mechanical integrity of the film.

Abstract: Methods for fabricating robust films across a patterned underlying layer's edges or steps are disclosed. The novel methods diminish the negative effects of electrode steps or edges on the integrity of a membrane. Thus, the methods are particularly applicable to membrane release technology. The height of the step or edge is eliminated or reduced to increase the mechanical integrity of the film.

Abstract: Methods for fabricating robust films across a patterned underlying layer's edges or steps are disclosed. The novel methods diminish the negative effects of electrode steps or edges on the integrity of a membrane. Thus, the methods are particularly applicable to membrane release technology. The height of the step or edge is eliminated or reduced to increase the mechanical integrity of the film.

Abstract: A method of isolating piezoelectric thin film acoustic resonator devices to prevent laterally propagating waves generated by the device from leaving the device and/or interfering with adjacent devices or systems. Specifically, this isolation technique involves the manipulation or isolation of the piezoelectric material layer between the acoustic resonator devices, in an effort to limit the amount of acoustic energy which propagates in a lateral direction away from the device. In one aspect, at least a portion of the piezoelectric material not involved in signal transmission by transduction between RF and acoustic energy is removed from the device. In another aspect, the growth a piezoelectric material is limited to certain regions during fabrication of the device. In a further aspect, the crystal orientation of the piezoelectric material is disrupted or altered during device fabrication so as to form regions having excellent piezoelectric properties and regions exhibiting poor piezoelectric characteristics.

Abstract: A method of producing and mounting electronic devices to negate the effects of parasitics on device performance. In one aspect, the substrate surface of the device is coated with a thin, etch-resistant film during fabrication that acts as a barrier to allow removal of substrate material beneath the film, creating a suspended structure upon which the remaining layers of circuitry rest. Alternatively the device is made with a film that is integral to the device, and that acts as the supporting membrane. To mount the device on a carrier or package, solder bumps are applied near the ends of the conductors of the device, and the die is then secured to a carrier or package, and positioned so that leads extending from the conductors mate up with bonding strips on the carrier or package. The solder bumps are then reflowed or melted to establish electrical connection between leads of the device and corresponding bonding strips of the carrier.

Abstract: The invention embodies a method and apparatus for controlling the thickness of a dielectric film formed by physical vapor deposition (PVD). The method compensates for the continuously varying electrical load conditions inherent in dielectric deposition via PVD. The method can be implemented through three different stages. Initially, the system power supply can be configured to operate in either constant current or constant voltage mode, herein referred to as constant supply parameter mode. Next, a gas composition which minimizes excursions in system impedance under these conditions is empirically determined. Finally, a test deposition can be performed using the constant parameter power supply mode and the gas mixture. This deposition is performed while tracking and summing the energy delivered to the system. The thickness of the deposited film is subsequently measured, and from these data a thickness-per-unit-energy relationship is determined.

Abstract: A method of producing and mounting electronic devices to negate the effects of parasitics on device performance. In one aspect, the substrate surface of the device is coated with a thin, etch-resistant film during fabrication that acts as a barrier to allow removal of substrate material beneath the film, creating a suspended structure upon which the remaining layers of circuitry rest. Alternatively the device is made with a film that is integral to the device, and that acts as the supporting membrane. To mount the device on a carrier or package, solder bumps are applied near the ends of the conductors of the device, and the die is then secured to a carrier or package, and positioned so that leads extending from the conductors mate up with bonding strips on the carrier or package. The solder bumps are then reflowed or melted to establish electrical connection between leads of the device and corresponding bonding strips of the carrier.

Abstract: In the method, a substrate is coated with different films to be patterned. These films have different etch rates. The films and substrate are then coated with a primary etch mask, and subsequently patterned to produce an electrode that has a gradual taper at the electrode edge. The formed electrode eliminates any abrupt substrate to electrode step, so that any subsequent thin-film deposition of piezoelectric material is continuous over the entire electrode surface and the electrode/substrate interface.

Abstract: The invention presents a deposition method which varies the growth conditions of a film on a patterned substrate. For example, deposition conditions required for obtaining growth are determined for each of the substrate's component surfaces. Film deposition begins under the conditions used to deposit material on one of the substrate materials. Then, the growth parameters are adjusted towards desired conditions for the other substrate material as another small amount of material is deposited. The adjustment and subsequent deposition is repeated until the desired conditions for growth on the second material are met. Growth of the remainder of the film then continues under the desired deposition conditions for growth on the second material.

Abstract: Methods for fabricating robust films across a patterned underlying layer's edges or steps are disclosed. The novel methods diminish the negative effects of electrode steps or edges on the integrity of a membrane. Thus, the methods are particularly applicable to membrane release technology. The height of the step or edge is eliminated or reduced to increase the mechanical integrity of the film.

Abstract: The present invention provides a method for tuning a thin film resonator (TFR) filter comprising a plurality of TFR components formed on a substrate. Each of the TFR components has a set of resonant frequencies that depend on material parameters and construction. TFR bandpass filter response for example can be produced by shifting the set of resonant frequencies in at least one of the series branch TFR components so as to establish the desired shape of the bandpass response and the desired performance of the filter. The shifting may be advantageously performed by removing piezoelectric material from the series branch TFR component, providing a TFR filter with bandwidth and attenuation advantages over that conventionally achieved by down-shifting resonant frequency sets of the shunt TFR components by adding metal material.

Abstract: The invention removes a portion(s) of a material of interest, while leaving an adjacent or underlying electrode(s) intact. The material is exposed to a plasma containing at least two-halogen-containing gases. At least a portion of the material, for example a piezoelectric material, an oxygen-containing material, or a nitrogen-containing material, is etched by the plasma. By removing desired portions of this material, the device can have alternative or complex architecture. In addition, the propagation of shear waves is limited in the device.