Abstract: A method and processing device for image demosaicing is provided. The processing device comprises memory and a processor. The processor is configured to, for a pixel of a Bayer image which filters an acquired image using three color components, determine directional color difference weightings in a horizontal direction and a vertical direction, determine a color difference between the first color component and the second color component and a color difference between the second color component and the third color component based on the directional color difference weightings, interpolate a color value of the pixel from the one color component and the color differences and provide a color image for display.

Abstract: Devices, methods, and systems for detecting false color in an image. An edge preserving filter is applied to an image sensor output to generate a first demosaiced image. A low pass filter is applied to the image sensor output to generate a second demosaiced image. A hue difference between the first demosaiced image and the second demosaiced image is calculated. A false color region is detected responsive to the hue difference exceeding a threshold hue difference.

Abstract: This invention is about a stretchable crystalline semiconductor nanowire and a preparation method. The stretchable crystalline semiconductor nanowire has a long and thin main body, a diameter of the nanowire is between 20 to 200 nm, and the nanowire has a crystalline inorganic semiconductor structure. The stretchable crystalline semiconductor nanowire has a bending structure having a plurality of stretchable units disposed along an axial direction, and the stretchable units are connected sequentially to form the stretchable crystalline semiconductor nanowire. Since the nanowire and the guided channel cross-section can be effectively adjusted, stripping and transferring onto other flexible substrates can be further performed. The method of preparing a crystalline nanowire having a spring structure has broad prospects in applications related to the fields of flexible electronics and sensors.

Abstract: The present invention provides a wearable display equipment, comprising a headphone device including two headphone bodies, a display device including a housing and an optical display module within the housing, the housing including two end regions respectively adjacent to the two headphone bodies, a middle region between the two end regions, and a connecting portion disposed in the middle region, and a connecting component including a main body and two distal ends respectively extending from two opposite sides of the main body, the two distal ends respectively connected to the two headphone bodies, and the main body at least partially connected to the connecting portion. The display device is connected to the headphone device via the connecting component such that, when a user pushes the two headphone bodies away from each other, the two end regions of the display device are detached from the connecting component.

Abstract: A display unit and a head-mounted display device are provided by the present disclosure. The display unit includes an optical unit, an image generation device, a first adjusting unit, and a second adjusting unit. The first adjusting unit includes a first operating member and a locking mechanism. When the locking mechanism is not subjected to an external force, the locking mechanism is in a first state for locking a position of the optical unit, and when the locking mechanism is subjected to the external force by the first operating member, the locking mechanism is in a second state capable of driving the optical unit to move in a first direction. The second adjusting unit includes a transmission mechanism and a second operating member. The second operating member surrounds the first operating member and makes the image generation device move in a second direction when rotating the second operating member.

Abstract: A method for the low-temperature production of radial electronic junction semiconductor nanostructures on a substrate, includes: a) forming on the substrate, metal aggregates capable of electronically doping a first semiconductor material; b) growing, in the vapor phase, doped semiconductor nanowires in the presence of one or more non-dopant precursor gases of the first semiconductor material, the substrate being heated to a temperature at which the metal aggregates are in the liquid phase, the growth of the doped semiconductor nanowires in the vapor phase being catalyzed by the metal aggregates; c) rendering the residual metal aggregates inactive; and d) the chemical vapor deposition, in the presence of one or more precursor gases and a dopant gas, of at least one thin film of a second semiconductor material so as to form at least one radial electronic junction nanostructure between the nanowire and the at least one doped thin film.

Abstract: The present invention provides a wearable display equipment, comprising a headphone device including two headphone bodies, a display device including a housing and an optical display module within the housing, the housing including two end regions respectively adjacent to the two headphone bodies, a middle region between the two end regions, and a connecting portion disposed in the middle region, and a connecting component including a main body and two distal ends respectively extending from two opposite sides of the main body, the two distal ends respectively connected to the two headphone bodies, and the main body at least partially connected to the connecting portion. The display device is connected to the headphone device via the connecting component such that, when a user pushes the two headphone bodies away from each other, the two end regions of the display device are detached from the connecting component.

Abstract: A method for the low-temperature production of radial electronic junction semiconductor nanostructures on a substrate, includes: a) forming on the substrate, metal aggregates capable of electronically doping a first semiconductor material; b) growing, in the vapor phase, doped semiconductor nanowires in the presence of one or more non-dopant precursor gases of the first semiconductor material, the substrate being heated to a temperature at which the metal aggregates are in the liquid phase, the growth of the doped semiconductor nanowires in the vapor phase being catalyzed by the metal aggregates; c) rendering the residual metal aggregates inactive; and d) the chemical vapor deposition, in the presence of one or more precursor gases and a dopant gas, of at least one thin film of a second semiconductor material so as to form at least one radial electronic junction nanostructure between the nanowire and the at least one doped thin film.

Abstract: Fabricating semiconductor nanowires (5) on a substrate (1) having a metallic oxide layer (2), includes: a) exposing the metallic oxide layer to a hydrogen plasma (11) of power P for a duration t suitable for reducing the layer and for forming metallic nanodrops (3) of radius (Rm) on the surface of the metallic oxide layer; b) low temperature plasma-assisted deposition of a thin layer (4) of a semiconductor material on the metallic oxide layer including the metallic nanodrops, the thin layer having a thickness (Ha) suitable for covering the metallic nanodrops; and c) thermal annealing at a temperature T sufficient to activate lateral growth of nanowires by catalysis of the material deposited as a thin layer from the metallic nanodrops. Nanowires are obtained by this method and nanometric transistors including a semiconductor nanowire.

Abstract: A method of fabricating semiconductor nanowires (5) on a substrate (1) having a metallic oxide layer (2), includes: a) exposing the metallic oxide layer to a hydrogen plasma (11) of power P for a duration t suitable for reducing the layer and for forming metallic nanodrops (3) of radius (Rm) on the surface of the metallic oxide layer; b) low temperature plasma-assisted deposition of a thin layer (4) of a semiconductor material on the metallic oxide layer including the metallic nanodrops, the thin layer having a thickness (Ha) suitable for covering the metallic nanodrops; and c) thermal annealing at a temperature T sufficient to activate lateral growth of nanowires by catalysis of the material deposited as a thin layer from the metallic nanodrops. Also described are nanowires obtained by this method and nanometric transistors including a semiconductor nanowire, for forming a semiconductive connection between a source (16), a drain (17), and a gate (18).