Abstract: The present disclosure provides a pad structure and a testkey structure and a testing method for a semiconductor device. The pad structure includes: an insulating dielectric layer formed on a substrate; a metal interconnection structure formed in the insulating dielectric layer, the metal interconnection structure comprising a first section and a second section, which are insulated from each other; and a pad formed on the top of the insulating dielectric layer so as to be exposed therefrom at least at its top surface, electrically connected to the first section, and insulated from the second section. With this disclosure, reduced capture of plasma is achievable, mitigating adverse impact of plasma on the semiconductor device.

Abstract: The present disclosure provides a pad structure and a testkey structure and a testing method for a semiconductor device. The pad structure includes: an insulating dielectric layer formed on a substrate; a metal interconnection structure formed in the insulating dielectric layer, the metal interconnection structure comprising a first section and a second section, which are insulated from each other; and a pad formed on the top of the insulating dielectric layer so as to be exposed therefrom at least at its top surface, electrically connected to the first section, and insulated from the second section. With this disclosure, reduced capture of plasma is achievable, mitigating adverse impact of plasma on the semiconductor device.