Abstract: This invention is a technique for forming a specifically configured region of material which is rejected by an advancing freezing front within a melt. Resolidification of the molten material is effected in such a manner that liquid-solid interfaces intersect so as to control the shape and location of the rejected material which solidifies. Specific embodiments involve the formation of wires, tubes, or planes of enriched rejected material. Applications include the formation of enriched conductive material for making electrical contact between internal or external regions of electronic devices. Additionally, enriched material with etching properties different than that of the surrounding material may be formed and subsequently etched away in micro-machining applications.

Abstract: The application describes a technique for passivating point defects that are characteristic of laser annealed semiconductors. According to the technique, the laser annealed material is treated with atomic hydrogen to electrically deactivate the defects.

Abstract: A temperature gradient zone melting process is disclosed wherein the temperature gradient is established substantially across only the molten zone by preferentially heating the molten zone. In a specific embodiment, the mechanism for inputting heat to the molten zone involves exposing the substrate to optical radiation of a wavelength and magnitude for which the molten zone is absorptive and the remainder of the body is transparent. The molten zone thereby migrates through the body toward the source of optical radiation.

Abstract: The rate at which radiation defects in semi-conductors are annealed is enhanced by various electronic mechanisms. These effects can be used to program device arrays in which all devices are initially damaged, then selected devices are activated by addressing them electrically through the individual device contacts.

Abstract: A technique isdescribed for removing defects and disorder from crystalline layers and the epitaxial regrowth of such layers. The technique involves depositing short term bursts of energy over a limited spatial region of a material thereby annealing the otherwise damaged material and causing it to epitaxially regrow. Subsequent to the short term energy deposition, similar processing is sequentially effected on adjoining and overlapping regions such that a pattern is ultimately "written". This pattern forms a continuous region of essentially single crystal material.