Patents by Inventor Lionel JAOUEN

Lionel JAOUEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin diodes
    Patent number: 11949023
    Abstract: A device includes a diode. The anode of the diode includes first, second, and third areas. The first area partially covers the second area and has a first doping level greater than a second doping level of the second area. The second area partially covers the third area and has the second doping level greater than a third doping level of the third area. A first insulating layer partially overlaps the first and second areas.
    Type: Grant
    Filed: December 20, 2021
    Date of Patent: April 2, 2024
    Assignee: STMicroelectronics (Tours) SAS
    Inventors: Arnaud Yvon, Lionel Jaouen
  • THIN DIODES
    Publication number: 20220209024
    Abstract: A device includes a diode. The anode of the diode includes first, second, and third areas. The first area partially covers the second area and has a first doping level greater than a second doping level of the second area. The second area partially covers the third area and has the second doping level greater than a third doping level of the third area. A first insulating layer partially overlaps the first and second areas.
    Type: Application
    Filed: December 20, 2021
    Publication date: June 30, 2022
    Applicant: STMicroelectronics (Tours) SAS
    Inventors: Arnaud YVON, Lionel JAOUEN
  • Vertical thyristor
    Patent number: 11362204
    Abstract: A thyristor is formed from a vertical stack of first, second, third, and fourth semiconductor regions of alternated conductivity types. The fourth semiconductor region is interrupted in a gate area of the thyristor. The fourth semiconductor region is further interrupted in a continuous corridor that extends longitudinally from the gate area towards an outer lateral edge of the fourth semiconductor region. A gate metal layer extends over the gate area of the thyristor. A cathode metal layer extends over the fourth semiconductor region but not over the continuous corridor.
    Type: Grant
    Filed: December 6, 2019
    Date of Patent: June 14, 2022
    Assignee: STMicroelectronics (Tours) SAS
    Inventors: Samuel Menard, Lionel Jaouen
  • VERTICAL THYRISTOR
    Publication number: 20200203516
    Abstract: A thyristor is formed from a vertical stack of first, second, third, and fourth semiconductor regions of alternated conductivity types. The fourth semiconductor region is interrupted in a gate area of the thyristor. The fourth semiconductor region is further interrupted in a continuous corridor that extends longitudinally from the gate area towards an outer lateral edge of the fourth semiconductor region. A gate metal layer extends over the gate area of the thyristor. A cathode metal layer extends over the fourth semiconductor region but not over the continuous corridor.
    Type: Application
    Filed: December 6, 2019
    Publication date: June 25, 2020
    Applicant: STMicroelectronics (Tours) SAS
    Inventors: Samuel MENARD, Lionel JAOUEN