Abstract: In a method for electrically doping a semiconducting material, a layer of germanium is formed having a germanium layer thickness, while in situ incorporating phosphorus dopant atoms at a concentration of at least about 5×1018 cm?3 through the thickness of the germanium layer during formation of the germanium layer. Additional phosphorus dopant atoms are ex situ incorporated through the thickness of the germanium layer, after formation of the germanium layer, to produce through the germanium layer thickness a total phosphorus dopant concentration of at least about 2×1019 cm?3.

Abstract: In a method for electrically doping a semiconducting material, a layer of germanium is formed having a germanium layer thickness, while in situ incorporating phosphorus dopant atoms at a concentration of at least about 5×1018 cm?3 through the thickness of the germanium layer during formation of the germanium layer. Additional phosphorus dopant atoms are ex situ incorporated through the thickness of the germanium layer, after formation of the germanium layer, to produce through the germanium layer thickness a total phosphorus dopant concentration of at least about 2×1019 cm?3.

Abstract: A germanium metal-semiconductor-metal (MSM) photodetector is fabricated by growing crystalline germanium from an amorphous silicon seed, supported by an amorphous substrate, at a temperature of about 450° C. In this fabrication, crystalline Ge is grown via selective deposition in geometrically confined channels, where amorphous silicon is disposed as the growth seed. Ge growth extends from the growth seed along the channels to a lithographically defined trench. The Ge emerging out of the channels includes crystalline grains that coalesce to fill the trench, forming a Ge strip that can be used as the active area of a photodetector. One or more Schottky contacts can be formed by a thin tunneling layer (e.g., Al2O3) deposited on the Ge strip and metal contracts formed on the tunneling layer.

Abstract: In a method of forming a photonic device, a first silicon electrode is formed, and then a germanium active layer is formed on the first silicon electrode while including n-type dopant atoms in the germanium layer, during formation of the layer, to produce a background electrical dopant concentration that is greater than an intrinsic dopant concentration of germanium. A second silicon electrode is then formed on a surface of the germanium active layer. The formed germanium active layer is doped with additional dopant for supporting an electrically-pumped guided mode as a laser gain medium with an electrically-activated n-type electrical dopant concentration that is greater than the background dopant concentration to overcome electrical losses of the photonic device.

Abstract: In a method of forming a photonic device, a first silicon electrode is formed, and then a germanium active layer is formed on the first silicon electrode while including n-type dopant atoms in the germanium layer, during formation of the layer, to produce a background electrical dopant concentration that is greater than an intrinsic dopant concentration of germanium. A second silicon electrode is then formed on a surface of the germanium active layer. The formed germanium active layer is doped with additional dopant for supporting an electrically-pumped guided mode as a laser gain medium with an electrically-activated n-type electrical dopant concentration that is greater than the background dopant concentration to overcome electrical losses of the photonic device.

Abstract: A SiGe or Ge structure comprises a substrate and a SiGe or Ge layer that is formed on a first surface of the substrate. A silicidation or germanide layer is formed on a second surface of the substrate so to increase the tensile strain of the SiGe or Ge layer on the first surface.

Abstract: An optical field concentrator includes a plurality of waveguide layers comprising high index materials having a first defined thickness. At least one nano-layer structure is positioned between said waveguide layers. The at least one nano-layer structure comprises low index materials having a second defined thickness that is smaller than the first defined thickness. A plurality of cladding layers are positioned between the waveguide layers and the at least one nano-layer structure. The cladding layers have a third defined thickness that is larger than the first defined thickness.

Abstract: An optical waveguide structure includes an air-via region that receives an optical signal from an optical source. A photonic crystal cladding region is formed on the surface of the air-via region. The photonic crystal cladding region confines the optical signal within the air-via region and propagates the optical signal along the axial direction while ensuring near complete transmission of the optical signal.

Abstract: A photodetector includes a substrate and a layer of Ge formed on the substrate. A plurality of n-type doped regions and a plurality of p-type doped regions are formed in Ge region. These doped regions formed an alternating pattern. Electrodes are formed on n-type doped regions and on the p-type doped regions. The utilization of transparent electrodes increases the sensitivity of the photodetector without impacting speed.

Abstract: An optoelectronic device includes an input waveguide structure that receives an input optical signal. A GeSi/Si waveguide structure receives from the input waveguide the input optical signal and performs selective optoelectronic operations on the input optical signal. The GeSi/Si waveguide structure outputs an optical or electrical output signal associated with the selective optoelectronic operations performed on the input optical signal. An output waveguide structure receives the output optical signal from the GeSi/Si waveguide structure and provides the optical output signal for further processing.

Abstract: A planar mid-infrared (mid-IR) integrated microphotonic platform includes at least one laser performing lasing functions. The at least one laser comprises chalcogenide glass. At least amplifier structure is coupled to the at least one laser for performing optical amplification. The at least amplifier structure comprises chalcogenide glass. At least one waveguide structure is coupled to the at least one amplifier structure for guiding an optical signal in the microphotonic platform. The at least waveguide structure comprises chalcogenide glass. At least one modulator structure is coupled to the at least one waveguide structure for modulating the optical signal. The at least modulator structure comprises chalcogenide glass. At least one photodetector is coupled to the at least one modulator structure for performing photodetecting functions of the microphotonic platform. The at least photodetector comprises chalcogenide glass.

Abstract: High-speed optoetectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.

Abstract: A laser structure includes at least one active layer having doped Ge so as to produce light emissions at approximately 1550 nm from the direct band gap of Ge. A first confinement structure is positioned on a top region of the at least one active layer. A second confinement structure is positioned on a bottom region the at least one active layer.

Abstract: High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.

Abstract: High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.

Abstract: A resonator structure includes a substrate and a cladding layer formed on the substrate. A plurality of lens-shaped optical structures is formed on the cladding layer. The lens-shaped optical structures comprise chacolgenide glass being exposed to a reflow process so as to make smooth the surface of the resonator structure and increase substantially its Q factor.

Abstract: A waveguide structure includes a SOI substrate. A core structure is formed on the SOI substrate comprising a plurality of multilayers having alternating or aperiodically distributed thin layers of either Si-rich oxide (SRO), Si-rich nitride (SRN) or Si-rich oxynitride (SRON). The multilayers are doped with a rare earth material so as to extend the emission range of the waveguide structure to the near infrared region. A low index cladding includes conductive oxides to act as electrodes.

Abstract: A method of forming a low loss crystal quality waveguide is provided. The method includes providing a substrate and forming a dielectric layer on the substrate. A channel is formed by etching a portion of the dielectric layer. A selective growth of a Si Ge, or SiGe layer is performed in the area that defines the channel. Furthermore, the method includes thermally annealing the waveguide at a defined temperature range.

Abstract: A ring resonator structure includes a semiconductor substrate, a core, and a cladding. Either the core or the cladding comprises chalcogenide glass to improve electromagnetic confinement in the ring resonator structure.

Abstract: A bidirectional transceiver assembly includes a VCSEL structure that emits light at a defined wavelength on a substrate structure. A photodetector receives the light. A hole structure is formed on the substrate structure to allow the light from the VCSEL structure to be emitted so as to form an optical path.