Patents by Inventor Lionel LUPO

Lionel LUPO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a semiconductor device including a pitch multiplication
    Patent number: 10529579
    Abstract: Disclosed herein is a manufacturing method of a semiconductor device that includes forming first and second layers over an underlying martial such that the first layer is between the underlying material and the second layer, forming a third layer over the second layer, forming first and second core portions apart from each other over the third layer, forming a gap portion between the first and the second core portions; and removing the second and the third layers by using the first and the second core portions and the gap portion as a mask to expose a part of the first layer.
    Type: Grant
    Filed: February 11, 2019
    Date of Patent: January 7, 2020
    Assignee: Micron Technology, Inc.
    Inventor: Lionel Lupo
  • Method of forming a semiconductor device including a pitch multiplication
    Patent number: 10438809
    Abstract: Disclosed herein is a manufacturing method of a semiconductor device that includes forming first and second layers over an underlying martial such that the first layer is between the underlying material and the second layer, forming a third layer over the second layer, forming first and second core portions apart from each other over the third layer, forming a gap portion between the first and the second core portions; and removing the second and the third layers by using the first and the second core portions and the gap portion as a mask to expose a part of the first layer.
    Type: Grant
    Filed: July 18, 2017
    Date of Patent: October 8, 2019
    Assignee: Micron Technology, Inc.
    Inventor: Lionel Lupo
  • Method of Forming A Semiconductor Device Including A Pitch Multiplication
    Publication number: 20190279874
    Abstract: Disclosed herein is a manufacturing method of a semiconductor device that includes forming first and second layers over an underlying martial such that the first layer is between the underlying material and the second layer, forming a third layer over the second layer, forming first and second core portions apart from each other over the third layer, forming a gap portion between the first and the second core portions; and removing the second and the third layers by using the first and the second core portions and the gap portion as a mask to expose a part of the first layer.
    Type: Application
    Filed: July 18, 2017
    Publication date: September 12, 2019
    Inventor: Lionel LUPO
  • Method of Forming A Semiconductor Device Including A Pitch Multiplication
    Publication number: 20190172719
    Abstract: Disclosed herein is a manufacturing method of a semiconductor device that includes forming first and second layers over an underlying martial such that the first layer is between the underlying material and the second layer, forming a third layer over the second layer, forming first and second core portions apart from each other over the third layer, forming a gap portion between the first and the second core portions; and removing the second and the third layers by using the first and the second core portions and the gap portion as a mask to expose a part of the first layer.
    Type: Application
    Filed: February 11, 2019
    Publication date: June 6, 2019
    Applicant: Micron Technology, Inc.
    Inventor: Lionel LUPO
  • Method of Forming A Semiconductor Device Including A Pitch Multiplication
    Publication number: 20170338121
    Abstract: Disclosed herein is a manufacturing method of a semiconductor device that includes forming first and second layers over an underlying martial such that the first layer is between the underlying material and the second layer, forming a third layer over the second layer, forming first and second core portions apart from each other over the third layer, forming a gap portion between the first and the second core portions; and removing the second and the third layers by using the first and the second core portions and the gap portion as a mask to expose a part of the first layer.
    Type: Application
    Filed: July 18, 2017
    Publication date: November 23, 2017
    Inventor: Lionel LUPO
  • Method of forming a semiconductor device including a pitch multiplication
    Patent number: 9741582
    Abstract: Disclosed herein is a manufacturing method of a semiconductor device that includes forming first and second layers over an underlying martial such that the first layer is between the underlying material and the second layer, forming a third layer over the second layer, forming first and second core portions apart from each other over the third layer, forming a gap portion between the first and the second core portions; and removing the second and the third layers by using the first and the second core portions and the gap portion as a mask to expose a part of the first layer.
    Type: Grant
    Filed: July 28, 2015
    Date of Patent: August 22, 2017
    Assignee: Micron Technology, Inc.
    Inventor: Lionel Lupo
  • Method Of Forming A Semiconductor Device Including A Pitch Multiplication
    Publication number: 20160035578
    Abstract: Disclosed herein is a manufacturing method of a semiconductor device that includes forming first and second layers over an underlying martial such that the first layer is between the underlying material and the second layer, forming a third layer over the second layer, forming first and second core portions apart from each other over the third layer, forming a gap portion between the first and the second core portions; and removing the second and the third layers by using the first and the second core portions and the gap portion as a mask to expose a part of the first layer.
    Type: Application
    Filed: July 28, 2015
    Publication date: February 4, 2016
    Inventor: Lionel LUPO