Abstract: There is provided a system and method of algorithm performance prediction. The method includes obtaining one or more sets of images acquired from one or more sites of a semiconductor specimen to be examined by a target algorithm; extracting values of a set of image attributes from the one or more sets of images, wherein the set of image attributes is expected to result in varied responses from the target algorithm; and providing the values of the set of image attributes to a variation model to predict performance of the target algorithm with respect to a performance metric without executing the target algorithm on the sets of images, wherein the variation model is constructed to predict how the target algorithm responds to variations in values of the set of image attributes.

Abstract: There is provided a system and method of examination of a semiconductor specimen. The semiconductor specimen comprises at least a surface layer and a under layer. The method includes obtaining a secondary electron (SE) image and a backscattered electron (BSE) image of the specimen acquired by an electron beam tool, wherein the BSE image possesses one or more image artifacts caused by one or more structural features on the surface layer; processing the SE image to generate a feature mask comprising a set of segments representative of the one or more structural features; and generating a corrected BSE image based on the BSE image and the feature mask, wherein the corrected BSE image possesses suppressed image artifacts with respect to the one or more image artifacts in the BSE image.

Abstract: A method for improving a quality of a secondary electron image of a region of a sample, the method may include obtaining a backscattered electron (BSE) image of the region and a secondary electron (SE) image of the region; wherein the BSE image and the SE image are generated by scanning of the region with an electron beam; processing the BSE image and the SE image to provide a processed BSE image and a processed SE image; and generating a BSE compensated SE image, wherein the generating comprises applying one or more selected BSE correction factors on one or more parts of the processed BSE image.

Abstract: A method for determining a depth of a hidden structural element of an object, the method may include (i) obtaining contrast information regarding a contrast between (a) hidden structural element detection signals that are indicative of electrons emitted from the hidden structural element, and (b) surroundings detection signals that are indicative of electrons emitted from a surroundings of the hidden structural element; wherein the hidden structural element detection signals and the surroundings detection signals are detected as a result of a scanning of a region of the object, with an illuminating electron beam; wherein the region comprises the hidden structural element and the surroundings; and (ii) determining the depth of the hidden structural element based, at least in part, on the contrast information.

Abstract: There is provided a method and a system in which a processing circuitry is configured to obtain an inspection image representative of 2D information of an inspection area of a semiconductor specimen, and feed the inspection image to a trained machine learning model operative to segment the inspection image into at least a first segment S?1 and a second segment S?2, wherein the first segment S?1 corresponds to a first region of the inspection area which has a height profile pattern corresponding to a first height profile pattern, and the second segment S?2 corresponds to a second region of the area which has a height profile pattern corresponding to a second height profile pattern, wherein the first height profile pattern is different from the second height profile pattern.

Abstract: A method for determining a depth of a hidden structural element of an object, the method may include (i) obtaining contrast information regarding a contrast between (a) hidden structural element detection signals that are indicative of electrons emitted from the hidden structural element, and (b) surroundings detection signals that are indicative of electrons emitted from a surroundings of the hidden structural element; wherein the hidden structural element detection signals and the surroundings detection signals are detected as a result of a scanning of a region of the object, with an illuminating electron beam; wherein the region comprises the hidden structural element and the surroundings; and (ii) determining the depth of the hidden structural element based, at least in part, on the contrast information.

Abstract: A method for improving a quality of a secondary electron image of a region of a sample, the method may include obtaining a backscattered electron (BSE) image of the region and a secondary electron (SE) image of the region; wherein the BSE image and the SE image are generated by scanning of the region with an electron beam; processing the BSE image and the SE image to provide a processed BSE image and a processed SE image; and generating a BSE compensated SE image, wherein the generating comprises applying one or more selected BSE correction factors on one or more parts of the processed BSE image.