Abstract: As described herein, a system, method, and computer program are provided for securing container images. In use, a request to access a container image is identified. In response to the request, a digest of the container image is retrieved. The digest is validated according to an execution and business context. A response to the request is provided, based on a result of the validating.

Abstract: A good transfer method includes obtaining, at a good transfer platform, an available good transfer option including transferor availability and dimensions of a good transfer space, obtaining, at the good transfer platform, a good transfer request of a user including one or more goods to be transferred from a pick-up location to a drop-off location, dimensions of the one or more goods, and a pick-up time associated with the one or more goods, presenting, via the good transfer platform, the available good transfer option to the user, obtaining, at the good transfer platform, a selection of the available good transfer option to fulfill the good transfer request of the user, and notifying, via the good transfer platform, the good transferor of the pick-up location, the pick-up time, and the drop-off location of the good information of the good transfer request.

Abstract: A method, a non-transitory computer readable medium and a system for compensating for an electromagnetic interference induced deviation of an electron beam. The method may include obtaining measurement information about a magnetic field within an electron beam tool, the measurement information is generated by at least one planar Hall Effect magnetic sensor that is located within the electron beam tool; wherein the at least one planar Hall Effect magnetic sensor comprises at least one magnetometer integrated with at least one magnetic flux concentrator; estimating the electromagnetic interference induced deviation of the electron beam, the estimating is based on the magnetic field; and setting a trajectory of the electron beam to compensate for the electromagnetic interference induced deviation of the electron beam.

Abstract: A planar Hall effect (PHE) sensor for measuring at an external magnetic field includes a plurality of elongated magnetic regions. Each magnetic region includes a ferromagnetic material that is magnetized along a longitudinal axis. The magnetic regions cross one another at an overlap region that is characterized by a plurality of easy magnetic axes. At least two pairs of electrical leads are each aligned along one of the easy magnetic axes. A current source may be connected to a first pair of the electrical leads to cause a current to flow through the overlap region along a first easy magnetic axis. A voltage measurement device may be connected to another pair of the electrical leads to measure a PHE voltage that is generated by a component of the external magnetic field that is perpendicular to the easy magnetic axis along which the overlap region is magnetized.

Abstract: A planar Hall effect (PHE) sensor for measuring at an external magnetic field includes a plurality of elongated magnetic regions. Each magnetic region includes a ferromagnetic material that is magnetized along a longitudinal axis. The magnetic regions cross one another at an overlap region that is characterized by a plurality of easy magnetic axes. At least two pairs of electrical leads are each aligned along one of the easy magnetic axes. A current source may be connected to a first pair of the electrical leads to cause a current to flow through the overlap region along a first easy magnetic axis. A voltage measurement device may be connected to another pair of the electrical leads to measure a PHE voltage that is generated by a component of the external magnetic field that is perpendicular to the easy magnetic axis along which the overlap region is magnetized.

Abstract: A multi-state MRAM device comprises N overlapping ovals defining a free ferromagnetic region. The size of the free ferromagnetic region is controlled the shape anisotropy of the configuration via at least a aspect ratio greater than 2, of the free ferromagnetic region. The free ferromagnetic region has a magnetic moment spontaneously aligned along the long axis in each oval outside the center region. A center magnetic moment has a multitude of exactly 2*N stable orientations determined by the magnetic moments in the segments of the ovals outside the center region. An embodiment is an MRAM device using tunneling junctions to achieve a multi-state memory configuration. Certain embodiments includes an electrically conducting heavy-metal layer disposed adjacent to and connected with the free ferromagnetic region. Some embodiments include a topological insulating material, such as Bi2Se3.

Abstract: A multi-state MRAM device comprises N overlapping ovals defining a free ferromagnetic region. The size of the free ferromagnetic region is controlled the shape anisotropy of the configuration via at least a aspect ratio greater than 2, of the free ferromagnetic region. The free ferromagnetic region has a magnetic moment spontaneously aligned along the long axis in each oval outside the center region. A center magnetic moment has a multitude of exactly 2*N stable orientations determined by the magnetic moments in the segments of the ovals outside the center region. An embodiment is an MRAM device using tunneling junctions to achieve a multi-state memory configuration. Certain embodiments includes an electrically conducting heavy-metal layer disposed adjacent to and connected with the free ferromagnetic region. Some embodiments include a topological insulating material, such as Bi2Se3.

Abstract: The present invention discloses plural planar Hall-effect sensors each having a magnetic sensing region of an elongated shape, the magnetic sensing regions having plural orientations, wherein, for a ratio of long axis length to short axis length greater than a predetermined number, effective single magnetic domain behavior is exhibited in the sensing region, the sensing having shape-induced uniaxial magnetic anisotropy with the easy axis parallel to the long axis of the magnetic sensing region; further wherein the magnitude of the uniaxial magnetic anisotropy depends on the ratio of the thickness of the sensing region to the length of the short axis, and method of operating the same to measure plural magnetic field components.

Abstract: The present invention discloses a planar Hall-effect sensor with a magnetic sensing region of an elongated shape, wherein, for a ratio of long axis length to short axis length greater than a predetermined number, effective single magnetic domain behavior is exhibited in the sensing region, the sensing having shape-induced uniaxial magnetic anisotropy with the easy axis parallel to the long axis of the magnetic sensing region; further wherein the magnitude of the uniaxial magnetic anisotropy depends on the ratio of the thickness of the sensing region to the length of the short axis.

Abstract: The present invention is directed to the use of perovskite manganite thin films and other magnetic films that exhibit both planar Hall effect and biaxial magnetic anisotropy to form the active area in magnetic sensor devices and in magnetic bit cells used in magnetoresistive random access memory (MRAM) devices. The manganite thin films of the invention are ferromagnetic manganites of the formula R1-xAxMnO3, wherein R is a rare-earth metal, A is an alkaline earth metal, and x is generally between about 0.15 and about 0.5.

Abstract: The present invention is directed to the use of perovskite manganite thin films and other magnetic films that exhibit both planar Hall effect and biaxial magnetic anisotropy to form the active area in magnetic sensor devices and in magnetic bit cells used in magnetoresistive random access memory (MRAM) devices. The manganite thin films of the invention are ferromagnetic manganites of the formula R1-xAxMnO3, wherein R is a rare-earth metal, A is an alkaline earth metal, and x is generally between about 0.15 and about 0.5.