Patents by Inventor Liping D. Hou
Liping D. Hou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11979134Abstract: A bulk acoustic wave resonator with better performance and better manufacturability is described. The bulk acoustic wave resonator includes a composite piezoelectric film. The composite piezoelectric film includes a first sublayer of a first piezoelectric material, a second sublayer of a second piezoelectric material, and a third sublayer of a third piezoelectric material that is disposed between the first sublayer and the second sublayer. The first piezoelectric material has a first lattice constant, the second piezoelectric material has a second lattice constant, and the third piezoelectric material has a third lattice constant that is distinct from the first lattice constant and from the second lattice constant. The composite piezoelectric film may include a sequence of alternating sublayers of two or more distinct piezoelectric materials, or a sequence of composition graded layers having gradually changing composition.Type: GrantFiled: October 15, 2020Date of Patent: May 7, 2024Assignee: GLOBAL COMMUNICATION SEMICONDUCTORS, LLCInventors: Liping D. Hou, Shing-Kuo Wang
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Patent number: 11909373Abstract: A bulk acoustic wave (BAW) resonator includes a substrate, a stack over the substrate and including a piezoelectric layer disposed between two electrode layers, and one or more edge frames. The one or more edge frames can be a raised metal frame extending parallel to a periphery of an active region of the stack and has one or more slanted cuts such that the edge frame does not form a closed loop and loss of acoustic energy in the active region through the one or more cuts is reduced, minimized or prevented. Alternatively or additionally, the one or more edge frames include a recessed edge frame in the form of a trench in the piezoelectric layer extending parallel to a boundary of the active region, and may further include a second edge frame formed on the first electrode and embedded in the piezoelectric layer.Type: GrantFiled: October 15, 2020Date of Patent: February 20, 2024Assignee: GLOBAL COMMUNICATION SEMICONDUCTORS, LLCInventors: Shing-Kuo Wang, Liping D. Hou, Kun-Mao Pan, Andy Chien-Hsiang Chen, Robert B. Stokes
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Patent number: 11764750Abstract: Devices and processes for preparing devices are described for a bulk acoustic wave resonator. A stack includes a first electrode that is coupled to a first side of a piezoelectric layer and a second electrode that is coupled to a second side of the piezoelectric layer. The stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. A cavity frame is coupled to the first electrode and to the substrate. The cavity frame forms a perimeter around a cavity. Optionally, a heat dissipating frame is formed and coupled to the second electrode. The cavity frame and/or the heat dissipating frame improve the thermal stability of the bulk acoustic resonator.Type: GrantFiled: June 27, 2019Date of Patent: September 19, 2023Assignee: GLOBAL COMMUNICATION SEMICONDUCTORS, LLCInventors: Liping D. Hou, Kun-Mao Pan, Shing-Kuo Wang
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Patent number: 11736088Abstract: Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator and/or for obstructing propagation of lateral waves out of an active region of the bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer to form a stack having the active region. The piezoelectric layer in the active region is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. One or more perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or one or more posts or beams supporting the stack, reduce resonance of spurious waves and obstruct propagation of lateral acoustic waves out of the active region.Type: GrantFiled: March 16, 2020Date of Patent: August 22, 2023Assignee: GLOBAL COMMUNICATION SEMICONDUCTORS, LLCInventors: Robert B. Stokes, Alvin M. Kong, Liping D. Hou, Dae-Jin Hyun, Shing-Kuo Wang
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Publication number: 20220416149Abstract: A bulk acoustic wave resonator includes a substrate, and a stack that is supported by the substrate. The stack includes a first electrode, a multilayer buffer, a piezoelectric layer, and a second electrode. The multilayer buffer is disposed between the first electrode and the piezoelectric layer, and the piezoelectric layer is disposed between the multilayer buffer and the second electrode. The multilayer buffer includes two or more pairs of alternating layers. A first pair of the two or more pairs include a first layer of crystalline material having a first lattice constant, and a second layer of crystalline material having a lattice constant that is distinct from the first lattice constant.Type: ApplicationFiled: February 24, 2022Publication date: December 29, 2022Inventors: Liping D. Hou, Shing-Kuo Wang
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Publication number: 20210250012Abstract: Devices and processes for preparing devices are described for a bulk acoustic wave resonator. A stack formed over a substrate includes a piezoelectric film element, a first (e.g., bottom) electrode coupled to a first side of the piezoelectric film element, and a second (e.g., top) electrode that is coupled to a second side of the piezoelectric film element. A cavity is positioned between the stack and the substrate. The resonator includes one or more planarizing layers, including a first planarizing layer around the cavity, wherein a first portion of the first electrode is adjacent the cavity and a second portion of the first electrode is adjacent the first planarizing layer. The resonator optionally includes an air reflector around the perimeter of the piezoelectric film element. The stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode.Type: ApplicationFiled: April 26, 2021Publication date: August 12, 2021Inventors: Liping D. Hou, Kun-Mao Pan, Shing-Kuo Wang
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Publication number: 20210111693Abstract: A bulk acoustic wave resonator with better performance and better manufacturability is described. The bulk acoustic wave resonator includes a composite piezoelectric film. The composite piezoelectric film includes a first sublayer of a first piezoelectric material, a second sublayer of a second piezoelectric material, and a third sublayer of a third piezoelectric material that is disposed between the first sublayer and the second sublayer. The first piezoelectric material has a first lattice constant, the second piezoelectric material has a second lattice constant, and the third piezoelectric material has a third lattice constant that is distinct from the first lattice constant and from the second lattice constant. The composite piezoelectric film may include a sequence of alternating sublayers of two or more distinct piezoelectric materials, or a sequence of composition graded layers having gradually changing composition.Type: ApplicationFiled: October 15, 2020Publication date: April 15, 2021Inventors: Liping D. Hou, Shing-Kuo Wang
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Publication number: 20210111699Abstract: A bulk acoustic (BAW) resonator having a multilayer base and method of fabricating the bulk acoustic resonator is disclosed. A BAW resonator comprises a substrate having a cavity and including a frame around the cavity, a multilayer base adjacent the cavity and supported by the frame. The multilayer base includes a first layer of crystalline material having a first lattice constant and a second layer of crystalline material having a second lattice constant that is distinct from the first lattice constant. The BAW resonator further includes a stack over the multilayer base. The stack includes a first electrode formed on the multilayer base, a piezoelectric layer having a first side coupled to the first electrode and a second side opposite to the first side of the piezoelectric layer, and a second electrode coupled to the second side of the piezoelectric layer.Type: ApplicationFiled: October 15, 2020Publication date: April 15, 2021Inventors: Liping D. Hou, Alexander M. Vigo, Shing-Kuo Wang
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Publication number: 20210111701Abstract: A bulk acoustic wave (BAW) resonator with better performance and better manufacturability is described. A BAW resonator includes a substrate, a BAW stack disposed over the substrate, a first temperature compensation layer disposed between the substrate and the stack, and a second temperature compensation layer disposed over the stack. The BAW stack includes a piezoelectric layer disposed between a first electrode and a second electrode. A method of making a BAW resonator is also disclosed. The method includes forming a first base layer over a substrate including a layer of sacrificial material and a frame surrounding the layer of sacrificial material, forming a first temperature compensation layer over the first base layer, forming a BAW stack over the first temperature compensation layer, forming a second temperature compensation layer over the BAW stack, and removing the layer of sacrificial material to form a cavity adjacent the base layer.Type: ApplicationFiled: October 15, 2020Publication date: April 15, 2021Inventors: Liping D. Hou, Shing-Kuo Wang
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Publication number: 20210111702Abstract: A bulk acoustic wave (BAW) resonator includes a substrate, a stack over the substrate and including a piezoelectric layer disposed between two electrode layers, and one or more edge frames. The one or more edge frames can be a raised metal frame extending parallel to a periphery of an active region of the stack and has one or more slanted cuts such that the edge frame does not form a closed loop and loss of acoustic energy in the active region through the one or more cuts is reduced, minimized or prevented. Alternatively or additionally, the one or more edge frames include a recessed edge frame in the form of a trench in the piezoelectric layer extending parallel to a boundary of the active region, and may further include a second edge frame formed on the first electrode and embedded in the piezoelectric layer.Type: ApplicationFiled: October 15, 2020Publication date: April 15, 2021Inventors: Shing-Kuo Wang, Liping D. Hou, Kun-Mao Pan, Andy Chien-Hsiang Chen, Robert B. Stokes
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Publication number: 20200220520Abstract: Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator and/or for obstructing propagation of lateral waves out of an active region of the bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer to form a stack having the active region. The piezoelectric layer in the active region is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. One or more perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or one or more posts or beams supporting the stack, reduce resonance of spurious waves and obstruct propagation of lateral acoustic waves out of the active region.Type: ApplicationFiled: March 16, 2020Publication date: July 9, 2020Inventors: Robert B. Stokes, Alvin M. Kong, Liping D. Hou, Dae-Jin Hyun, Shing-Kuo Wang
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Publication number: 20200028482Abstract: Devices and processes for preparing devices are described for a bulk acoustic wave resonator. A stack includes a first electrode that is coupled to a first side of a piezoelectric layer and a second electrode that is coupled to a second side of the piezoelectric layer. The stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. A cavity frame is coupled to the first electrode and to the substrate. The cavity frame forms a perimeter around a cavity. Optionally, a heat dissipating frame is formed and coupled to the second electrode. The cavity frame and/or the heat dissipating frame improve the thermal stability of the bulk acoustic resonator.Type: ApplicationFiled: June 27, 2019Publication date: January 23, 2020Inventors: Liping D. Hou, Kun-Mao Pan, Shing-Kuo Wang
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Patent number: 9269784Abstract: A device includes a semiconductor die. The semiconductor die includes a plurality of semiconductor layers disposed on a GaAs substrate, including a first semiconductor layer having a first band-gap and a second semiconductor layer having a second band-gap. The semiconductor die further includes a contact layer disposed epitaxially upon the first semiconductor layer. The contact layer has a thickness that is less than a critical thickness. The second semiconductor layer is epitaxially disposed upon the contact layer. The contact layer has a third band-gap that is less than the first band-gap and the second band-gap. The semiconductor die further includes a conductive layer disposed upon the contact layer to form an ohmic contact. The conductive layer comprises one or more metal layers compatible with silicon processing techniques.Type: GrantFiled: August 19, 2014Date of Patent: February 23, 2016Assignee: GLOBAL COMMUNICATION SEMICONDUCTORS, INC.Inventors: Yuefei Yang, Shing-Kuo Wang, Liping D. Hou
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Publication number: 20150054036Abstract: A device includes a semiconductor die. The semiconductor die includes a plurality of semiconductor layers disposed on a GaAs substrate, including a first semiconductor layer having a first band-gap and a second semiconductor layer having a second band-gap. The semiconductor die further includes a contact layer disposed epitaxially upon the first semiconductor layer. The contact layer has a thickness that is less than a critical thickness. The second semiconductor layer is epitaxially disposed upon the contact layer. The contact layer has a third band-gap that is less than the first band-gap and the second band-gap. The semiconductor die further includes a conductive layer disposed upon the contact layer to form an ohmic contact. The conductive layer comprises one or more metal layers compatible with silicon processing techniques.Type: ApplicationFiled: August 19, 2014Publication date: February 26, 2015Inventors: Yuefei Yang, Shing-Kuo Wang, Liping D. Hou
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Patent number: 5998817Abstract: A multicell transistor for use in a circuit has an input ground plane for an input waveguide and an output ground plane for an output waveguide. The multicell transistor includes a gate electrode coupled to the input waveguide, a drain electrode coupled to the output waveguide, and a source electrode coupled to the input ground plane. An output ground strap spaced from the drain electrode couples the output ground plane to the source electrode. A pair of transmission lines are orthogonally connected to and extend from the gate electrode to form a pair of inductors for matching the impedances of the gate electrode and the input waveguide.Type: GrantFiled: November 3, 1997Date of Patent: December 7, 1999Assignee: Raytheon CompanyInventors: Cheng P. Wen, Peter Chu, Michael R. Cole, Wah S. Wong, Robert F. Wang, Liping D. Hou
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Patent number: 5705432Abstract: A unique photoresist process is provided which achieves clean and complete lift-off of a thin film layer such as a sputtered thin film formed on a photoresist which is formed above a semiconductor substrate. The process of the present invention relies on a reentrant photoresist profile which breaks the continuity of the thin film layer. Accordingly, the process of the present invention ensures a clean lift-off. The desired photoresist profile which breaks the continuity of the thin film layer can be obtained by a typical photoresist process preceded by an oxidation process that takes place on the surface of the semiconductor substrate. The oxidation process provides a thin native oxide layer with thickness ranging from about 30 to 50 .ANG.. No extra processing steps involving dielectric film deposition and etch are required to achieve clean lift-off. Nevertheless, the process of the present invention ensures the clean lift-off of the thin film layer.Type: GrantFiled: December 1, 1995Date of Patent: January 6, 1998Assignee: Hughes Aircraft CompanyInventors: Kusol Lee, Tom Quach, Danny Li, Liping D. Hou, Sam Chung, Tom Y. Chi
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Patent number: 5556797Abstract: A method of fabricating a self-aligned double gate recess profile in a semiconductor substrate is disclosed in which a first mask layer is formed over the substrate. A second mask layer having an opening is formed over the first mask layer. An opening at least as wide as the second mask layer's opening is formed through the first mask layer to expose the substrate beneath the second mask layer's opening. A first recess is etched in the semiconductor through the second mask layer's opening. The first mask layer's opening is then uniformly expanded and a wider recess, aligned to the first recess, is then formed in the semiconductor. The method is particularly applicable to the formation of self-aligned gate and channel recesses in a GaAs MESFET.Type: GrantFiled: May 30, 1995Date of Patent: September 17, 1996Assignee: Hughes Aircraft CompanyInventors: Tom Y. Chi, Liping D. Hou, Kusol Lee, Danny Li, Ishver K. Naik, Tom Quach
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Patent number: 4317700Abstract: A method of fabricating a bubble domain device composite structure on a substrate of depositing a barrier layer of a suitable polymeric dielectric material on the substrate; subsequently depositing a layer of electrically conductive material thereover; subsequently depositing a spacer layer of a liquid polymeric dielectric material over the conductive layer; processing the spacer layer so that the surface of the spacer layer is substantially planar; and subsequently depositing a layer of a magnetically operative material over the spacer layer.Type: GrantFiled: August 20, 1980Date of Patent: March 2, 1982Assignee: Rockwell International CorporationInventors: Kunihide Tanaka, Michael T. Elliott, Sam Chung, James Pau, Linda Gray, Liping D. Hou, Mary F'Mayer, David Warren, Karen Finch