Abstract: A method for enhancing the stability of an N-type semiconductor through oxygen elimination includes constructing an antioxidant layer on the surface of a semiconductor material, or blending the antioxidant with the N-type semiconductor material. The antioxidant removes the existing oxygen and related species in the N-type semiconductor, eliminates the related trap state, and prevents the N-type semiconductor from further degrading, so that the electrical properties such as mobility of the N-type semiconductor device are improved, and the operation stability and long-term storage stability are improved. In addition, the antioxidant also inhibits the photobleaching of N-type semiconductors and significantly improves the photochemical stability of N-type semiconductors.

Abstract: A method for enhancing the stability of an N-type semiconductor through oxygen elimination includes constructing an antioxidant layer on the surface of a semiconductor material, or blending the antioxidant with the N-type semiconductor material. The antioxidant removes the existing oxygen and related species in the N-type semiconductor, eliminates the related trap state, and prevents the N-type semiconductor from further degrading, so that the electrical properties such as mobility of the N-type semiconductor device are improved, and the operation stability and long-term storage stability are improved. In addition, the antioxidant also inhibits the photobleaching of N-type semiconductors and significantly improves the photochemical stability of N-type semiconductors.

Abstract: Disclosed are an array substrate, a display panel and a display apparatus. The array substrate includes: gate lines, data lines, and pixel units. The gate lines and the data lines are arranged between at least part of the adjacent pixel units. The array substrate further includes: common electrode lead wires and common electrode layers. The common electrode lead wires are arranged on a same layer as the data lines, extend in a same direction as the data lines, and are located between at least part of the adjacent pixel units. The common electrode layers are insulated from the common electrode lead wires through insulating layers and are connected with the common electrode lead wires through via holes in the insulating layers. The via holes are located in a region where the gate lines and the common electrode lead wires intersect.

Abstract: A method for enhancing aggregation state stability of organic semiconductor (OSC) films includes constructing the OSC film; introducing uniform and discontinuous nanoparticles on a surface of the film or an inside of the film. Electrical properties of the OSC film are not influenced by introducing the nanoparticles. Grain boundary, dislocation, stacking fault, and surface of the film are pinned by the nanoparticles, increasing potential barrier of the aggregation state evolution of the film, and thus enhancing the stability of the aggregation state and greatly improving maximum working temperature and storage lifetime of organic field-effect transistors. Under room temperature storage, morphology of the OSC film introduced with the nanoparticles is difficult to change, so that the stability of electrical properties of organic transistor components prepared from the film is ensured in a high-temperature and atmospheric working environment.

Abstract: A method for enhancing aggregation state stability of organic semiconductor (OSC) films includes constructing the OSC film; introducing uniform and discontinuous nanoparticles on a surface of the film or an inside of the film. Electrical properties of the OSC film are not influenced by introducing the nanoparticles. Grain boundary, dislocation, stacking fault, and surface of the film are pinned by the nanoparticles, increasing potential barrier of the aggregation state evolution of the film, and thus enhancing the stability of the aggregation state and greatly improving maximum working temperature and storage lifetime of organic field-effect transistors. Under room temperature storage, morphology of the OSC film introduced with the nanoparticles is difficult to change, so that the stability of electrical properties of organic transistor components prepared from the film is ensured in a high-temperature and atmospheric working environment.

Abstract: Disclosed are an array substrate, a display panel and a display apparatus. The array substrate includes: gate lines, data lines, and pixel units. The gate lines and the data lines are arranged between at least part of the adjacent pixel units. The array substrate further includes: common electrode lead wires and common electrode layers. The common electrode lead wires are arranged on a same layer as the data lines, extend in a same direction as the data lines, and are located between at least part of the adjacent pixel units. The common electrode layers are insulated from the common electrode lead wires through insulating layers and are connected with the common electrode lead wires through via holes in the insulating layers. The via holes are located in a region where the gate lines and the common electrode lead wires intersect.

Abstract: The present invention relates to a composition for preparing flexible foams and the application thereof. The composition comprises the following components: a. an isocyanate mixture comprising: a1) an aliphatic and/or alicyclic isocyanate monomer, and a2) an aliphatic and/or alicyclic; isocyanate trimer, wherein the mass ratio of said monomer to said trimer is in a range of 3:1-200:1; b. a polymer polyol mixture comprising: b1) a first polyether polyol having a number average molecular weight of not less than 3000 g/mol with an ethylene oxide content of 5-20 wt. %, b2) a second polyether polyol having a number average molecular weight of not less than 3000 g/mol with an ethylene oxide content of more than 60 wt. %, wherein the mass ratio of said first polyether polyol to said second polyether polyol is in a range of 4:1-100:1; c. an isocyanate-reactive group comprising compound having a number average molecular weight of 32-400 g/mol; d. a catalyst; e. a foaming agent; and f.

Abstract: The present invention relates to a method for preparing a rigid polyurethane foam using a non-continuous production process, the rigid polyurethane foam prepared therefrom, and use thereof.

Abstract: The present invention relates to a rigid polyurethane foam for a discontinuous production process and a polyurethane composite panel, as well as use of the rigid polyurethane foam in insulation. The rigid polyurethane foam is made from a reaction system comprising an isocyanate component and a polyol component, wherein the polyol component includes at least one long-chain polyether polyol having a functionality of 2 and a number average molecular weight of 1800 to 4000, blowing agents, catalysts, etc. The polyurethane foam of the present invention has unexpectedly satisfactory dimensional stability and adhesion strength, as well as other good physical properties.

Abstract: The present invention provides a polyol composition for preparing a viscoelastic and reticulated polyurethane foam, comprising a first polyether polyol b1), a second polyether polyol b2), a third polyether polyol b3), and a surfactant b6). The present invention also provides a viscoelastic and reticulated polyurethane foam prepared from said polyol composition, wherein the polyurethane foam has a ball rebound rate of less than 15% determined according to GB/T6670-2008.

Abstract: The present invention relates to a composition for preparing flexible foams and the application thereof. The composition comprises the following components: a. an isocyanate mixture comprising: a1) an aliphatic and/or alicyclic isocyanate monomer, and a2) an aliphatic and/or alicyclic; isocyanate trimer, wherein the mass ratio of said monomer to said trimer is in a range of 3:1-200:1; b. a polymer polyol mixture comprising: b1) a first polyether polyol having a number average molecular weight of not less than 3000 g/mol with an ethylene oxide content of 5-20 wt. %, b2) a second polyether polyol having a number average molecular weight of not less than 3000 g/mol with an ethylene oxide content of more than 60 wt. %, wherein the mass ratio of said first polyether polyol to said second polyether polyol is in a range of 4:1-100:1; c. an isocyanate-reactive group comprising compound having a number average molecular weight of 32-400 g/mol; d. a catalyst; e. a foaming agent; and f.

Abstract: The present invention relates to a process for producing polyurethane foams, preferably moulded flexible polyurethane foams, by reacting an isocyanate component which is a mixture obtained in the production of tolylene diisocyanate as a bottoms residue, and at least one further isocyanate component with a component reactive toward isocyanates. The invention further relates to polyurethane foams produced by the process according to the invention and to the use thereof.

Abstract: The present invention provides a polyol composition for preparing a viscoelastic and reticulated polyurethane foam, comprising a first polyether polyol b1), a second polyether polyol b2), a third polyether polyol b3), and a surfactant b6). The present invention also provides a viscoelastic and reticulated polyurethane foam prepared from said polyol composition, wherein the polyurethane foam has a ball rebound rate of less than 15% determined according to GB/T6670-2008.