Abstract: The present application discloses a UTBB photodetector pixel unit, array and method, including: a silicon film layer, a buried oxide layer, a charge collection layer and a substrate, the silicon film layer, the buried oxide layer, the charge collection layer and the substrate being arranged in sequence from top to bottom; the silicon film layer includes NMOS transistors or PMOS transistors; the charge collection layer includes charge collection control regions and charge accumulation regions; and the substrate includes an N-type substrate or a P-type substrate. A centripetal electric field is formed around the charge accumulation regions, and photo-generated charges are accumulated in the corresponding pixel units under the action of the centripetal electric field.

Abstract: The present application discloses a pixel unit and a signal processing method for a pixel unit. The pixel unit includes at least one pixel, and the pixel includes: an N-type main pixel, a P-type main pixel, and a sub-pixel; and the sub-pixel is located between the N-type main pixel and the P-type main pixel; or the pixel includes at least a first pixel and a second pixel that are adjacent to each other; the first pixel includes an N-type main pixel, and the second pixel includes a P-type main pixel; the first pixel and the second pixel share one sub-pixel; the sub-pixel is configured to generate and output a signal difference between the N-type main pixel and the P-type main pixel according to the current.

Abstract: The present application discloses a pixel unit and a signal processing method for a pixel unit. The pixel unit includes at least one pixel, and the pixel includes: an N-type main pixel, a P-type main pixel, and a sub-pixel; and the sub-pixel is located between the N-type main pixel and the P-type main pixel; or the pixel includes at least a first pixel and a second pixel that are adjacent to each other; the first pixel includes an N-type main pixel, and the second pixel includes a P-type main pixel; the first pixel and the second pixel share one sub-pixel; the sub-pixel is configured to generate and output a signal difference between the N-type main pixel and the P-type main pixel according to the current.

Abstract: The present application discloses a UTBB photodetector pixel unit, array and method, including: a silicon film layer, a buried oxide layer, a charge collection layer and a substrate, the silicon film layer, the buried oxide layer, the charge collection layer and the substrate being arranged in sequence from top to bottom; the silicon film layer includes NMOS transistors or PMOS transistors; the charge collection layer includes charge collection control regions and charge accumulation regions; and the substrate includes an N-type substrate or a P-type substrate. A centripetal electric field is formed around the charge accumulation regions, and photo-generated charges are accumulated in the corresponding pixel units under the action of the centripetal electric field.