Abstract: A hybrid Mote Carlo and deterministic particle transport method based on the transition area is provided. Firstly, the geometric complexity is analyzed based on the CAD model. Based on the geometric complexity and the physical characteristics, an area having complex geometry is divided as a Monte Carlo particle transport calculation area, an area having simple geometry is divided as a deterministic particle transport calculation area, and a transition area with a determined thickness is created between the two areas. In the particle transport calculation, the Monte Carlo particle transport calculation is performed in the Monte Carlo particle transport area and the transition area, and the deterministic calculation is performed in the deterministic area and the transition area. Basically consistent results of the transition area under the two calculations can be achieved through multiple iterations, thereby realizing seamless coupling of the two calculations.

Abstract: A depth peeling based nuclear radiation shield computational mesh generation method and a depth peeling based nuclear radiation shield computational mesh generation system are provided. The method includes: generating an outline pixel matrix of geometries with the depth peeling technique, performing conversion in an image space to obtain outline meshes of the geometries; then obtaining internal meshes of the geometries based on the outline meshes by a scanning line method, so as to fast generate the nuclear radiation shield computational meshes.

Abstract: This invention presents a stereoscopic LED display with dual barriers, comprising a LED display panel, a heat shield, a first barrier, a second barrier, a protection layer, a packaging layer. The first barrier is placed between the LED panel and the second barrier, making the centers of the LED sub-pixels on the same levels laterally and longitudinally. The second barrier is placed between the first barrier and the protection layer for the stereoscopic light splitting. This invention provides an effective solution for the alignment problem of the LED by controlling the positions of the first barrier and the second barrier, which is favorable for the realization of large scale, high brightness naked LED 3D display, furthermore, this method is simple and low-cost.

Abstract: The present invention relates to display manufacturing technology, especially for a dielectric-free triode field emission display device based on double-gate/single-cathode type electron emission units and the device drive methods. This device comprises parallelly positioned anode and cathode/gate plates, during production, gate/cathode/gate electron emission units are set on the cathode/gate plate side by side. The spacing between cathode and gate electrodes is vacuum circumstance. For each cathode, an anode is positioned on the anode plate, facing the cathode. And the voltages applied on the cathode and gate electrodes are to scan and the anode voltage is to adjust the signal. When the electrodes on the cathode/gate plate take on fixed roles, fixed voltages are used to drive the device. When these electrodes on the cathode/gate plate can be used interchangeably as cathode or gate electrodes, respectively, pulse scanning method is used to drive the device.

Abstract: The present invention relates to display manufacturing technology, especially for a dielectric-free triode field emission display device based on double-gate/single-cathode type electron emission units and the device drive methods. This device comprises parallelly positioned anode and cathode/gate plates, during production, gate/cathode/gate electron emission units are set on the cathode/gate plate side by side. The spacing between cathode and gate electrodes is vacuum circumstance. For each cathode, an anode is positioned on the anode plate, facing the cathode. And the voltages applied on the cathode and gate electrodes are to scan and the anode voltage is to adjust the signal. When the electrodes on the cathode/gate plate take on fixed roles, fixed voltages are used to drive the device. When these electrodes on the cathode/gate plate can be used interchangeably as cathode or gate electrodes, respectively, pulse scanning method is used to drive the device.

Abstract: The present invention relates to a triode field emission display with anode and gate on the same substrate, comprising anode-gate substrate and cathode substrate, parallel and adapted in the size; a number of strip-like cathode conducting layers arranged alternating on the cathode substrate; resistor layer for current limiting and dielectric layer for cathode protection are arranged alternately on the cathode conducting layer in the longitudinal direction; the electron emission materials are arranged on the resistor layer for current limiting; wherein the strip-like anode conducting layer and strip-like gate conducting layer on the anode-gate substrate are perpendicular to the strip-like cathode conducting layer on the cathode substrate, dielectric layer for isolation is arranged between the anode-gate and the cathode substrates, one end of the dielectric layer for isolation is connected to the dielectric layer for gate protection, the other end is connected to the dielectric layer for cathode protection.

Abstract: The present invention relates to a triode field emission display with anode and gate on the same substrate, comprising anode-gate substrate and cathode substrate, parallel and adapted in the size; a number of strip-like cathode conducting layers arranged alternating on the cathode substrate; resistor layer for current limiting and dielectric layer for cathode protection are arranged alternately on the cathode conducting layer in the longitudinal direction; the electron emission materials are arranged on the resistor layer for current limiting; wherein the strip-like anode conducting layer and strip-like gate conducting layer on the anode-gate substrate are perpendicular to the strip-like cathode conducting layer on the cathode substrate, dielectric layer for isolation is arranged between the anode-gate and the cathode substrates, one end of the dielectric layer for isolation is connected to the dielectric layer for gate protection, the other end is connected to the dielectric layer for cathode protection.