Abstract: A light-emitting diode includes an epitaxial layered structure and a conductive mirror structure which includes a first electrically conductive layer and a second electrically conductive layer disposed on the epitaxial layered structure in such order. The first and second electrically conductive layers respectively have a first reflectance R1 and a second reflectance R2 to light emitted from the epitaxial layered structure, and R1<R2.

Abstract: A light-emitting diode includes an epitaxial layered structure and a conductive mirror structure which includes a first electrically conductive layer and a second electrically conductive layer disposed on the epitaxial layered structure in such order. The first and second electrically conductive layers respectively have a first reflectance R1 and a second reflectance R2 to light emitted from the epitaxial layered structure, and R1<R2.

Abstract: A light-emitting diode (LED) chip includes a substrate and an epitaxial structure. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on the substrate in such order. The second semiconductor layer has a light-emitting surface that is opposite to the active layer and that is formed with a microstructure. The microstructure includes a plurality of first protrusions that are separately disposed on the light-emitting surface, and a plurality of second protrusions that are disposed on the first protrusions and on the light-emitting surface between any two adjacent ones of the first protrusions.

Abstract: A semiconductor light-emitting device includes a substrate, a connection structure disposed on the substrate, a semiconductor light-emitting unit disposed on the connection structure, and first and second electrodes. The connection structure includes an insulating layer formed with a through hole, a first electrically connecting layer disposed on the insulating layer and electrically connected to the first electrode, and a second electrically connecting layer disposed between the substrate and the insulating layer and extending through the through hole to be electrically connected to the second electrode. A projection of the second electrode on the insulating layer covers a portion of the insulating layer.

Abstract: A semiconductor light-emitting device includes a substrate, a connection structure disposed on the substrate, a semiconductor light-emitting unit disposed on the connection structure, and first and second electrodes. The connection structure includes an insulating layer formed with a through hole, a first electrically connecting layer disposed on the insulating layer and electrically connected to the first electrode, and a second electrically connecting layer disposed between the substrate and the insulating layer and extending through the through hole to be electrically connected to the second electrode. A projection of the second electrode on the insulating layer covers a portion of the insulating layer.

Abstract: A light-emitting diode device includes a substrate and at least one mesa structure disposed on the substrate. The substrate includes at least one light-emitting region-forming area and at least one dicing region-forming area that are spaced apart from each other. The at least one dicing region-forming area surrounds the at least one light-emitting region-forming area. The at least one mesa structure includes a light-emitting mesa disposed on the at least one light-emitting region-forming area, and a dicing mesa disposed on the at least one dicing region-forming area and surrounding the light-emitting mesa. A method for making the light-emitting diode device is also provided herein.

Abstract: A light-emitting diode (LED) chip includes a substrate and an epitaxial structure. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on the substrate in such order. The second semiconductor layer has a light-emitting surface that is opposite to the active layer and that is formed with a microstructure. The microstructure includes a plurality of first protrusions that are separately disposed on the light-emitting surface, and a plurality of second protrusions that are disposed on the first protrusions and on the light-emitting surface between any two adjacent ones of the first protrusions.

Abstract: A semiconductor light-emitting device includes a substrate, a connection structure disposed on the substrate, a semiconductor light-emitting unit disposed on the connection structure, and first and second electrodes. The connection structure includes an insulating layer formed with a through hole, a first electrically connecting layer disposed on the insulating layer and electrically connected to the first electrode, and a second electrically connecting layer disposed between the substrate and the insulating layer and extending through the through hole to be electrically connected to the second electrode. A projection of the second electrode on the insulating layer covers a portion of the insulating layer.

Abstract: A light-emitting diode includes an epitaxial layered structure and a conductive mirror structure which includes a first electrically conductive layer and a second electrically conductive layer disposed on the epitaxial layered structure in such order. The first and second electrically conductive layers respectively have a first reflectance R1 and a second reflectance R2 to light emitted from the epitaxial layered structure, and R1<R2.