Abstract: A laser system for dicing a semiconductor structure is disclosed. The laser system includes a laser source and a laser energy adjusting unit. The laser source is configured to generate a laser. The laser energy adjusting unit is movably provided on a laser light path between the laser source and the semiconductor structure. The laser energy adjusting unit is moved to the laser light path between the laser source and the semiconductor structure based on a first determination that the laser source is focused on a first preset region of the semiconductor structure having a first material.

Abstract: A laser dicing system is disclosed. The laser dicing system includes a host device and a laser source. The host device reads and identifies a mark formed on a surface of a semiconductor structure. The laser source is coupled to the host device and is configured to generate a dicing laser energy to form a trench on the semiconductor structure. The dicing laser energy irradiated on the semiconductor structure is adjustable based on information embedded in the mark.

Abstract: The present disclosure describes methods and systems for processing semiconductor wafers. A method for processing a wafer includes measuring one or more wafer characteristics of the wafer using a plurality of detectors. The wafer includes a device region and a perimeter region. The method also includes determining a wafer modification profile of the wafer based on the measured one or more wafer characteristics. The method further includes modifying a ring-shaped portion of the wafer within the perimeter region using the wafer modification profile. The modified ring-shaped portion has a penetration depth that is less than a thickness of the wafer. The method further includes performing a wafer thinning process on the wafer.