Patents by Inventor Lis Karen Nanver
Lis Karen Nanver has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8450820Abstract: The invention discloses a process for manufacturing a radiation detector for detecting e.g. 200 eV electrons. This makes the detector suited for e.g. use in an Scanning Electron Microscope. The detector is a PIN photodiode with a thin layer of pure boron connected to the p+-diffusion layer. The boron layer is connected to an electrode with an aluminium grid to form a path of low electrical resistance between each given point of the boron layer and the electrode. The invention addresses forming the aluminium grid on the boron layer without damaging the boron layer.Type: GrantFiled: January 13, 2011Date of Patent: May 28, 2013Inventors: Lis Karen Nanver, Thomas Ludovicus Maria Scholtes, Agata {hacek over (S)}akić, Cornelis Sander Kooijman, Gerard Nicolaas Anne van Veen
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Patent number: 8426831Abstract: In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.Type: GrantFiled: February 17, 2012Date of Patent: April 23, 2013Assignee: ASML Netherlands B.V.Inventors: Stoyan Nihtianov, Arie Johan Van Der Sijs, Bearrach Moest, Petrus Wilhelmus Josephus Maria Kemper, Marc Antonius Maria Haast, Gerardus Wilhelmus Petrus Baas, Lis Karen Nanver, Francesco Sarubbi, Antonius Andreas Johannes Schuwer, Gregory Micha Gommeren, Martijn Pot, Thomas Ludovicus Maria Scholtes
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Patent number: 8324598Abstract: In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.Type: GrantFiled: February 17, 2012Date of Patent: December 4, 2012Assignee: ASML Netherlands B.V.Inventors: Stoyan Nihtianov, Arie Johan Van Der Sijs, Bearrach Moest, Petrus Wilhelmus Josephus Maria Kemper, Marc Antonius Maria Haast, Gerardus Wilhelmus Petrus Baas, Lis Karen Nanver, Francesco Sarubbi, Antonius Andreas Johannes Schuwer, Gregory Micha Gommeren, Martijn Pot, Thomas Ludovicus Maria Scholtes
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Publication number: 20120268722Abstract: In one an embodiment, there is provided an assembly comprising at least one detector. Each of the at least one detector includes a substrate having a doped region of a first conduction type, a layer of dopant material of a second conduction type located on the substrate, a diffusion layer formed within the substrate and in contact with the layer of dopant material and the doped region of the substrate, wherein a doping profile, which is representative of a doping material concentration of the diffusion layer, increases from the doped region of the substrate to the layer of dopant material, a first electrode connected to the layer of dopant material, and a second electrode connected to the substrate. The diffusion layer is arranged to form a radiation sensitive surface.Type: ApplicationFiled: February 17, 2012Publication date: October 25, 2012Applicant: ASML Netherlands B.V.Inventors: Stoyan NIHTIANOV, Arie Johan Van Der Sijs, Bearrach Moest, Petrus Wilhelmus Josephus Maria Kemper, Marc Antonius Maria Haast, Gerardus Wilhelmus Petrus Baas, Lis Karen Nanver, Francesco Sarubbi, Antonius Andreas Johannes Schuwer, Gregory Micha Gommeren, Martijn Pot, Thomas Ludovicus Maria Sholtes
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Patent number: 8138485Abstract: A radiation detector, a method of manufacturing a radiation detector, and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation sensitive surface. The radiation sensitive surface is sensitive to radiation wavelengths between 10-200 nm and charged particles. The radiation detector has a silicon substrate, a dopant layer, a first electrode, and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the silicon substrate.Type: GrantFiled: June 24, 2008Date of Patent: March 20, 2012Assignee: ASML Netherlands B.V.Inventors: Stoyan Nihtianov, Arie Johan Van Der Sijs, Bearrach Moest, Petrus Wilhelmus Joseph Maria Kemper, Marc Antonius Maria Haast, Gerardus Wilhelmus Petrus Baas, Lis Karen Nanver, Francesco Sarubbi, Antonius Andreas Johannes Schuwer, Gregory Micha Gommeren, Martijn Pot, Thomas Ludovicus Maria Scholtes
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Publication number: 20110169116Abstract: The invention discloses a process for manufacturing a radiation detector for detecting e.g. 200 eV electrons. This makes the detector suited for e.g. use in an Scanning Electron Microscope. The detector is a PIN photodiode with a thin layer of pure boron connected to the p+-diffusion layer. The boron layer is connected to an electrode with an aluminium grid to form a path of low electrical resistance between each given point of the boron layer and the electrode. The invention addresses forming the aluminium grid on the boron layer without damaging the boron layer.Type: ApplicationFiled: January 13, 2011Publication date: July 14, 2011Applicant: FEI CompanyInventors: Lis Karen Nanver, Thomas Ludovicus Maria Scholtes, Agata Sakic, Cornelis Sander Kooijman, Gerard Nicolaas Anne van Veen
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Patent number: 7586108Abstract: The invention relates to a radiation detector, a method of manufacturing a radiation detector and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation-sensitive surface. The radiation-sensitive surface is sensitive for radiation with a wavelength between 10-200 nm. The radiation detector has a silicon substrate, a dopant layer, a first electrode and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer which is in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the Silicon substrate.Type: GrantFiled: June 25, 2007Date of Patent: September 8, 2009Assignee: ASML Netherlands B.V.Inventors: Stoyan Nihtianov, Arie Johan Van Der Sijs, Bearrach Moest, Petrus Wilhelmus Josephus Maria Kemper, Marc Antonius Maria Haast, Gerardus Wilhelmus Petrus Baas, Lis Karen Nanver, Francesco Sarubbi, Antonius Andreas Johannes Schuwer, Gregory Micha Gommeren, Martijn Pot, Thomas Ludovicus Maria Scholtes
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Publication number: 20090021717Abstract: A radiation detector, a method of manufacturing a radiation detector, and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation sensitive surface. The radiation sensitive surface is sensitive to radiation wavelengths between 10-200 nm and charged particles. The radiation detector has a silicon substrate, a dopant layer, a first electrode, and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the silicon substrate.Type: ApplicationFiled: June 24, 2008Publication date: January 22, 2009Applicant: ASML Netherlands B.V.Inventors: Stoyan Nihtianov, Arie Johan Van Der Sijs, Bearrach Moest, Petrus Wilhelmus, Joshepus, Maria Kemper, Marc Antonius, Maria Haast, Gerardus Wilhelmus, Petrus, Baas, Lis Karen Nanver, Francesco Sarubbi, Antonius Andreas, Johannes Schuwer, Gregory Micha Gommeren, Martijn Pot, Thomas Ludovicus, Maria Scholtes
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Publication number: 20080315121Abstract: The invention relates to a radiation detector, a method of manufacturing a radiation detector and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation-sensitive surface. The radiation-sensitive surface is sensitive for radiation with a wavelength between 10-200 nm. The radiation detector has a silicon substrate, a dopant layer, a first electrode and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer which is in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the Silicon substrate.Type: ApplicationFiled: June 25, 2007Publication date: December 25, 2008Applicant: ASML Netherlands B.V.Inventors: Stoyan Nihtianov, Arie Johan Van Der Sijs, Bearrach Moest, Petrus Wilhelmus Josephus Maria Kemper, Marc Antonius Maria Haast, Gerardus Wilhelmus Petrus Baas, Lis Karen Nanver, Francesco Sarubbi, Antonius Andreas Johannes Schuwer, Gregory Micha Gommeren, Martijn Pot, Thomas Ludovicus Maria Scholtes
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Publication number: 20080191260Abstract: The semiconductor device comprises a first and a second varactor which are connected in an anti-series configuration. This connection is done such that a first, substantially electrically conductive region is present between a second region with dopant of a first conductivity type and a third region with dopant of the first conductivity type. The second and third regions comprise dopant that is distributed uniformly within the region. The first region is provided with or connected to a contact which has an AC resistance of at least 1 k?.Type: ApplicationFiled: September 26, 2005Publication date: August 14, 2008Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Leonardus Cornelis Nicolaas De Vreede, Lis Karen Nanver, Koen Buisman