Abstract: A high-performance gate library is augmented with tapered gates. The widths of the stacked devices are varied to reduce the delay through some of the input pins. For example in a tapered NAND gate the bottom devices in the NFET stack are have longer widths than the top device to achieve smaller top input to output pin delay at the expense of larger bottom input to output pin delay. The method of using synthesis algorithms modifies the input net to gate pin connections and swaps traditional non-tapered gates with tapered gates to improve the delay of the timing critical paths. The latest arriving gate input net is swapped with the net connected to the top pin. The gate is then converted to a tapered gate provided the paths through the bottom gate input(s) that are not timing critical.

Abstract: A high-performance gate library is augmented with tapered gates. The widths of the stacked devices are varied to reduce the delay through some of the input pins. For example in a tapered NAND gate the bottom devices in the NFET stack are have longer widths than the top device to achieve smaller top input to output pin delay at the expense of larger bottom input to output pin delay. The method of using synthesis algorithms modifies the input net to gate pin connections and swaps traditional non-tapered gates with tapered gates to improve the delay of the timing critical paths. The latest arriving gate input net is swapped with the net connected to the top pin.

Abstract: A yarn storage container 10 including a generally rectangular container member 20 divided into an upper 28 and lower 29 main compartment which are further divided by permanent 30 and removable 31 partitions into enlarged sub-compartments 40 and smaller compartments 41, 42 respectively provided with spaced rows of apertures 34, 35 for dispensing strands of yarn 100 from the respective compartments 40, 41, 42.