Abstract: An improved vacuum fusion bonding structure and process for aligned bonding of large area glass plates, patterned with microchannels and access holes and slots, for elevated glass fusion temperatures. Vacuum pumpout of all components is through the bottom platform which yields an untouched, defect free top surface which greatly improves optical access through this smooth surface. Also, a completely non-adherent interlayer, such as graphite, with alignment and location features is located between the main steel platform and the glass plate pair, which makes large improvements in quality, yield, and ease of use, and enables aligned bonding of very large glass structures.

Abstract: An improved vacuum fusion bonding structure and process for aligned bonding of large area glass plates, patterned with microchannels and access holes and slots, for elevated glass fusion temperatures. Vacuum pumpout of all the components is through the bottom platform which yields an untouched, defect free top surface which greatly improves optical access through this smooth surface. Also, a completely non-adherent interlayer, such as graphite, with alignment and location features is located between the main steel platform and the glass plate pair, which makes large improvements in quality, yield, and ease of use, and enables aligned bonding of very large glass structures.

Abstract: A method which protects the region between a component and the substrate onto which the components is bonded using an electrically insulating fillet of photoresist. The fillet protects the regions from subsequent plating with metal and therefore shorting the plated conductors which run down the sides of the component and onto the substrate.

Abstract: A process of removing both the field metal, such as copper, and a metal, such as copper, embedded into a dielectric or substrate at substantially the same rate by dripping or spraying a suitable metal etchant onto a spinning wafer to etch the metal evenly on the entire surface of the wafer. By this process the field metal is etched away completely while etching of the metal inside patterned features in the dielectric at the same or a lesser rate. This process is dependent on the type of chemical etchant used, the concentration and the temperature of the solution, and also the rate of spin speed of the wafer during the etching. The process substantially reduces the metal removal time compared to mechanical polishing, for example, and can be carried out using significantly less expensive equipment.