Abstract: Systems and methods to reduce stiction in MEMS devices are disclosed. A microelectromechanical system (MEMS) device includes a substrate; a via supported by the substrate, the via comprising a first metal layer comprising a material; an arm extending away from and supported by the via, the arm comprising the material; and a second metal layer within the via on the first metal layer, wherein the second metal layer comprises nitrogen.

Abstract: Methods and apparatus for rendering plural channels on a common display are provided. In a method embodiment, a method for allowing sharing of a display by a plurality of users wishing to view a plurality of respective images includes displaying the plurality of respective images sequentially on the display. The method further includes selectively allowing the respective image to be viewed by the respective user, but not by any other of the plurality of users.

Abstract: Methods and apparatus for rendering plural channels on a common display are provided. In a method embodiment, a method for allowing sharing of a display by a plurality of users wishing to view a plurality of respective images includes displaying the plurality of respective images sequentially on the display. The method further includes selectively allowing the respective image to be viewed by the respective user, but not by any other of the plurality of users.

Abstract: A method of removing the pattern resist that remains on a microchip wafer after etching a patterned layer that is supported by a spacer layer. After the etch, the wafer is cleaned with a develop clean process that removes polymer residues from the pattern resist surface. Next is an ash to remove the hardened pattern resist surface, followed by removal of the pattern resist.

Abstract: Method for removing contaminants from a surface during semiconductor fabrication. A preferred embodiment comprises developing a resist layer on a top surface of a semiconductor substrate, curing the developed resist layer, and cleaning the developed resist layer with a developer solution to remove contaminants. The cleaning makes use of the same developer solution used to develop the resist layer, so the cleaning makes use of a process that already exists and requires no additional investment to implement, while the curing stabilizes the developed resist layer so that the cleaning does not damage the developed resist layer.

Abstract: According to one embodiment of the present invention, a semiconductor device includes a first layer of dielectric material disposed upon an upper surface of a substrate of a semiconductor device and a first non-conductive layer of metal disposed upon an upper surface of the dielectric material. The first layer of dielectric material and the first non-conductive layer of metal act as an optical trap for electromagnetic radiation received by the first non-conductive layer of metal. In particular embodiments, the semiconductor device may further comprise a second layer of dielectric material disposed upon an upper surface of the first non-conductive layer of metal and a second non-conductive layer of metal disposed upon an upper surface of the second layer of dielectric material.

Abstract: A method of removing the pattern resist that remains on a microchip wafer after etching a patterned layer that is supported by a spacer layer. After the etch, the wafer is cleaned with a develop clean process that removes polymer residues from the pattern resist surface. Next is an ash to remove the hardened pattern resist surface, followed by removal of the pattern resist.