Patents by Inventor Lisa J. Enman

Lisa J. Enman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250259886
    Abstract: Methods of manufacturing interconnect structures as part of a microelectronic device fabrication process are described. The methods include forming a dielectric layer including at least one feature defining a gap having sidewalls and a bottom on a substrate. The methods further include forming a blocking layer on the bottom by exposing the substrate to a blocking species that comprises a hydrocarbon and at least one additive; selectively depositing a barrier layer on the sidewalls; selectively depositing a metal liner on the barrier layer on the sidewalls; removing the blocking layer; and performing a gap fill process to fill the gap with a gapfill material.
    Type: Application
    Filed: February 12, 2024
    Publication date: August 14, 2025
    Applicant: Applied Materials, Inc.
    Inventors: Aaron Dangerfield, Lisa J. Enman, Bhaskar Jyoti Bhuyan, Yong Jin Kim, Carmen Leal Cervantes, Drew Phillips, Kevin Kashefi, Mark Saly
  • Publication number: 20250233015
    Abstract: Methods of manufacturing interconnect structures as part of a microelectronic device fabrication process are described. The methods include forming a dielectric layer including at least one feature defining a gap having sidewalls and a bottom on a substrate. The methods further include forming a blocking layer on the bottom by exposing the substrate to a blocking compound; selectively depositing a barrier layer on the sidewalls; selectively depositing a metal liner on the barrier layer on the sidewalls; removing the blocking layer; and performing a gap fill process to fill the gap with a gapfill material.
    Type: Application
    Filed: January 14, 2025
    Publication date: July 17, 2025
    Applicant: Applied Materials, Inc.
    Inventors: Bhaskar Jyoti Bhuyan, Lisa J. Enman, Feng Q. Liu, Jeffrey W. Anthis, Mark Saly, Lakmal C. Kalutarage, Aaron Dangerfield, Jesus Candelario Mendoza-Gutierrez, Sze Chieh Tan
  • Publication number: 20250157855
    Abstract: Methods for selectively depositing a material on a dielectric surface relative to a metallic surface are disclosed. The metallic surface is protected with a self-assembled monolayer comprising an N-heterocyclic carbene prior to deposition of a liner or barrier layer on adjacent dielectric surfaces.
    Type: Application
    Filed: November 7, 2024
    Publication date: May 15, 2025
    Applicant: Applied Materials, Inc.
    Inventors: Bhaskar Jyoti Bhuyan, Aaron Dangerfield, Jesus Candelario Mendoza-Gutierrez, Mark Saly, Chandan Kr Bank, Andrea Leoncini, Wei Chun Lim, Sze Chieh Tan, Lisa J. Enman
  • Publication number: 20240258116
    Abstract: Exemplary semiconductor processing methods may include flowing an etchant precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may define an exposed region of a titanium-containing material. The methods may include contacting the substrate with the etchant precursor. The methods may include removing at least a portion of the titanium-containing material.
    Type: Application
    Filed: January 26, 2023
    Publication date: August 1, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Baiwei Wang, Wanxing Xu, Lisa J. Enman, Aaron Dangerfield, Rohan Puligoru Reddy, Xiaolin C. Chen, Mikhail Korolik, Bhaskar Jyoti Bhuyan, Zhenjiang Cui, Anchuan Wang
  • Patent number: 11942330
    Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include flowing a first reagent in a substrate processing region housing the semiconductor substrate. The first reagent may include HX. X may be at least one of fluorine, chlorine, and bromine. The semiconductor substrate may include an exposed region of gallium oxide. Fluorinating the exposed region of gallium oxide may form a gallium halide and H2O. The methods may include flowing a second reagent in the substrate processing region. The second reagent may be at least one of trimethylgallium, tin acetylacetonate, tetramethylsilane, and trimethyltin chloride. The second reagent may promote a ligand exchange where a methyl group may be transferred to the gallium halide to form a volatile Me2GaY or Me3Ga. Y may be at least one of fluorine, chlorine, and bromine from the second reagent. The methods may include recessing a surface of the gallium oxide.
    Type: Grant
    Filed: June 9, 2022
    Date of Patent: March 26, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Feng Q. Liu, Lisa J. Enman, Lakmal C. Kalutarage, Mark J. Saly
  • Patent number: 11932940
    Abstract: Silyl pseudohalides having a general formula of R4-nSiXn, where n is a range of 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from nitrile, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate and isoselenocyanate are disclosed. Further, some embodiments of the disclosure provide methods for depositing silicon-containing films using silyl pseudohalides.
    Type: Grant
    Filed: November 12, 2020
    Date of Patent: March 19, 2024
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Keenan N. Woods, Cong Trinh, Mark Saly, Mihaela A. Balseanu, Maribel Maldonado-Garcia, Lisa J. Enman
  • Patent number: 11932938
    Abstract: Disclosed is a coated chamber component comprising a body having a reduced metal surface such that the reduced metal surface has less metal oxide as compared to an amount of metal oxide on a metal surface that has not been reduced. The metal surface may be reduced by pulsing a reducing alcohol thereon. The reduced metal surface may be coated with a corrosion resistant film that may be deposited onto the reduced metal surface by a dry atomic layer deposition process.
    Type: Grant
    Filed: July 22, 2020
    Date of Patent: March 19, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Lisa J. Enman, Steven D. Marcus, Mark J. Saly, Lei Zhou
  • Publication number: 20240003003
    Abstract: Disclosed is a coated chamber component comprising a body having a reduced metal surface such that the reduced metal surface has less metal oxide as compared to an amount of metal oxide on a metal surface that has not been reduced. The metal surface may be reduced by pulsing a reducing alcohol thereon. The reduced metal surface may be coated with a corrosion resistant film that may be deposited onto the reduced metal surface by a dry atomic layer deposition process.
    Type: Application
    Filed: September 14, 2023
    Publication date: January 4, 2024
    Inventors: Lisa J. Enman, Steven D. Marcus, Mark J. Saly, Lei Zhou
  • Patent number: 11732356
    Abstract: Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.
    Type: Grant
    Filed: July 29, 2020
    Date of Patent: August 22, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Cong Trinh, Mihaela A. Balseanu, Maribel Maldonado-Garcia, Ning Li, Mark Saly, Bhaskar Jyoti Bhuyan, Keenan N. Woods, Lisa J. Enman
  • Patent number: 11581206
    Abstract: Embodiments disclosed herein comprise a sensor. In an embodiment, the sensor comprises a substrate having a first surface and a second surface opposite from the first surface. In an embodiment, the sensor further comprises a first electrode over the first surface of the substrate, and a second electrode over the first surface of the substrate and adjacent to the first electrode. In an embodiment, the sensor further comprises a barrier layer over the first electrode and the second electrode.
    Type: Grant
    Filed: March 6, 2020
    Date of Patent: February 14, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Yaoling Pan, Patrick John Tae, Leonard Tedeschi, Jennifer Sun, Philip Allan Kraus, Xiaopu Li, Kallol Bera, Michael D. Willwerth, Albert Barrett Hicks, III, Lisa J. Enman, Mark Joseph Saly, Daniel Thomas McCormick
  • Publication number: 20220351960
    Abstract: Methods and precursors for depositing metal fluoride films on a substrate surface are described. The method includes exposing the substrate surface to a metal precursor and a fluoride precursor. The fluoride precursor is volatile at a temperature in a range of from 20° C. to 200° C. The metal precursor reacts with the fluoride precursor to form a non-volatile metal fluoride film.
    Type: Application
    Filed: June 15, 2021
    Publication date: November 3, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Lisa J. Enman, Mark Saly, Sanni Seppaelae, Gayatri Natu
  • Publication number: 20220301883
    Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include flowing a first reagent in a substrate processing region housing the semiconductor substrate. The first reagent may include HX. X may be at least one of fluorine, chlorine, and bromine. The semiconductor substrate may include an exposed region of gallium oxide. Fluorinating the exposed region of gallium oxide may form a gallium halide and H2O. The methods may include flowing a second reagent in the substrate processing region. The second reagent may be at least one of trimethylgallium, tin acetylacetonate, tetramethylsilane, and trimethyltin chloride. The second reagent may promote a ligand exchange where a methyl group may be transferred to the gallium halide to form a volatile Me2GaY or Me3Ga. Y may be at least one of fluorine, chlorine, and bromine from the second reagent. The methods may include recessing a surface of the gallium oxide.
    Type: Application
    Filed: June 9, 2022
    Publication date: September 22, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Feng Q. Liu, Lisa J. Enman, Lakmal C. Kalutarage, Mark J. Saly
  • Patent number: 11398388
    Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include selectively etching gallium oxide relative to gallium nitride. The method may include flowing a reagent in a substrate processing region housing the semiconductor substrate. The reagent may include at least one of chloride and bromide. The method may further include contacting an exposed region of gallium oxide with the at least one of chloride and bromide from the reagent to form a gallium-containing gas. The gallium-containing gas may be removed by purging the substrate processing region with an inert gas. The method includes recessing a surface of the gallium oxide. The method may include repeated cycles to achieve a desired depth.
    Type: Grant
    Filed: September 8, 2020
    Date of Patent: July 26, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Feng Q. Liu, Lisa J. Enman, Lakmal C. Kalutarage, Mark J. Saly
  • Publication number: 20220076960
    Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include selectively etching gallium oxide relative to gallium nitride. The method may include flowing a reagent in a substrate processing region housing the semiconductor substrate. The reagent may include at least one of chloride and bromide. The method may further include contacting an exposed region of gallium oxide with the at least one of chloride and bromide from the reagent to form a gallium-containing gas. The gallium-containing gas may be removed by purging the substrate processing region with an inert gas. The method includes recessing a surface of the gallium oxide. The method may include repeated cycles to achieve a desired depth.
    Type: Application
    Filed: September 8, 2020
    Publication date: March 10, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Feng Q. Liu, Lisa J. Enman, Lakmal C. Kalutarage, Mark J. Saly
  • Publication number: 20210280443
    Abstract: Embodiments disclosed herein comprise a sensor. In an embodiment, the sensor comprises a substrate having a first surface and a second surface opposite from the first surface. In an embodiment, the sensor further comprises a first electrode over the first surface of the substrate, and a second electrode over the first surface of the substrate and adjacent to the first electrode. In an embodiment, the sensor further comprises a barrier layer over the first electrode and the second electrode.
    Type: Application
    Filed: March 6, 2020
    Publication date: September 9, 2021
    Inventors: Yaoling Pan, Patrick John Tae, Leonard Tedeschi, Jennifer Sun, Philip Allan Kraus, Xiaopu Li, Kallol Bera, Michael D. Willwerth, Albert Barrett Hicks, III, Lisa J. Enman, Mark Joseph Saly, Daniel Thomas McCormick
  • Publication number: 20210140046
    Abstract: Silyl pseudohalides having a general formula of R4?nSiXn, where n is a range of 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from nitrile, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate and isoselenocyanate are disclosed. Further, some embodiments of the disclosure provide methods for depositing silicon-containing films using silyl pseudohalides.
    Type: Application
    Filed: November 12, 2020
    Publication date: May 13, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Keenan N. Woods, Cong Trinh, Mark Saly, Mihaela A. Balseanu, Maribel Maldonado-Garcia, Lisa J. Enman
  • Publication number: 20210032749
    Abstract: Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.
    Type: Application
    Filed: July 29, 2020
    Publication date: February 4, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Cong Trinh, Mihaela A. Balseanu, Maribel Maldonado-Garcia, Ning Li, Mark Saly, Bhaskar Jyoti Bhuyan, Keenan N. Woods, Lisa J. Enman
  • Publication number: 20210032745
    Abstract: Disclosed is a coated chamber component comprising a body having a reduced metal surface such that the reduced metal surface has less metal oxide as compared to an amount of metal oxide on a metal surface that has not been reduced. The metal surface may be reduced by pulsing a reducing alcohol thereon. The reduced metal surface may be coated with a corrosion resistant film that may be deposited onto the reduced metal surface by a dry atomic layer deposition process.
    Type: Application
    Filed: July 22, 2020
    Publication date: February 4, 2021
    Inventors: Lisa J. Enman, Steven D. Marcus, Mark J. Saly, Lei Zhou