Abstract: A method of forming an electrical contact in a semiconductor structure includes performing a patterning process to form a mask on a semiconductor structure, the semiconductor structure comprising a first semiconductor region, a second semiconductor region, a dielectric layer having a first opening over the first semiconductor region and a second opening over the second semiconductor region, wherein the mask covers an exposed surface of the second semiconductor region within the second opening, performing an amorphization ion implant process to amorphize an exposed surface of the first semiconductor region within the first opening, performing a removal process to remove the mask, performing a selective epitaxial deposition process, to epitaxially form a contact layer on the exposed surface of the second semiconductor region, and performing a recrystallization anneal process to recrystallize the amorphized surface of the first semiconductor region.

Abstract: A light-emitter structure is provided. The light emitter structure includes a platform. An Inx(AlyGa1-y)1-xP lower clad region is formed on the platform and has a lattice constant between approximately 5.49 ? and 5.62 ?. A strained quantum-well active region is formed on the lower clad region. An Inx(AlyGa1-y)1-xP upper clad region is formed on the strained quantum well active region.

Abstract: A light-emitter structure is provided. The light emitter structure includes a platform. An Inx(AlyGa1-y)1-xP lower clad region is formed on the platform and has a lattice constant between approximately 5.49 Å and 5.62 Å. A strained quantum-well active region is formed on the lower clad region. An Inx(AlyGa1-y)1-xP upper clad region is formed on the strained quantum well active region.