Patents by Inventor Lisa Moore
Lisa Moore has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20050201699Abstract: A method of forming an alkali metal oxide-doped optical fiber by diffusing an alkali metal into a surface of a glass article is disclosed. The silica glass article may be in the form of a tube or a rod, or a collection of tubes or rods. The silica glass article containing the alkali metal, and impurities that may have been unintentionally diffused into the glass article, is etched to a depth sufficient to remove the impurities. The silica glass article may be further processed to form a complete optical fiber preform. The preform, when drawn into an optical fiber, exhibits a low attenuation.Type: ApplicationFiled: January 28, 2005Publication date: September 15, 2005Inventors: Laura Ball, Bruno Baney, Dana Bookbinder, Keith House, Rostislav Khrapko, Lisa Moore, Susan Schiefelbein
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Publication number: 20050187092Abstract: Disclosed is a synthetic silica glass optical material having high resistance to optical damage by ultraviolet radiation in the ultraviolet wavelength range, particularly in the wavelength less than about 250 nm and particularly, exhibiting a low laser induced wavefront distortion; specifically a laser induced wavefront distortion, measured at 633 nm, of between about ?1.0 and 1.0 nm/cm when subjected to 10 billion pulses of a laser operating at approximately 193 nm and at a fluence of approximately 70 ?J/cm2. The synthetic silica glass optical material of the present invention comprises OH concentration levels of less than about 600 ppm, preferably less than 200 ppm, and H2 concentration levels less than about 5.0×1017 molecules/cm3,and preferably less than about 2.0×1017 molecules/cm3.Type: ApplicationFiled: February 22, 2005Publication date: August 25, 2005Inventors: Dana Bookbinder, Richard Fiacco, Kenneth Hrdina, Lisa Moore, Susan Schiefelbein
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Patent number: 6833949Abstract: The invention provides coated optical lithography elements and methods of coating optical elements, and particularly optical photolithography elements for use in below 240 nm optical photolithography systems utilizing vacuum ultraviolet light (VUV) lithography wavelengths no greater than about 193 nm, such as VUV projection lithography systems utilizing wavelengths in the 193 nm or 157 nm region. The optical devices manipulate vacuum ultraviolet lithography light less than 250 nm utilizing a deposited silicon oxyfluoride film. The deposited silicon oxyfluoride optical coating assists in the manipulation of incident light and protects the underlying optical materials, layers, and surfaces.Type: GrantFiled: September 9, 2002Date of Patent: December 21, 2004Assignee: Corning IncorporatedInventors: Robert L. Maier, Lisa A. Moore, Charlene M. Smith
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Patent number: 6817211Abstract: High purity direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive direct deposit vitrified silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a dry direct deposit vitrified silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.Type: GrantFiled: January 13, 2003Date of Patent: November 16, 2004Assignee: Corning IncorporatedInventors: John T. Brown, Stephen C. Currie, Lisa A. Moore, Susan L. Schiefelbein, Robert S. Pavlik, Jr.
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Patent number: 6782716Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed with the silicon oxyfluoride glass having a preferred fluorine content<0.5 weight percent. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.Type: GrantFiled: November 5, 2003Date of Patent: August 31, 2004Assignee: Corning IncorporatedInventors: Lisa A. Moore, Charlene M. Smith
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Publication number: 20040091798Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed with the silicon oxyfluoride glass having a preferred fluorine content<0.5 weight percent. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.Type: ApplicationFiled: November 5, 2003Publication date: May 13, 2004Inventors: Lisa A. Moore, Charlene M. Smith
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Patent number: 6682859Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed with the silicon oxyfluoride glass having a preferred fluorine content<0.5 weight percent. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.Type: GrantFiled: November 28, 2001Date of Patent: January 27, 2004Assignee: Corning IncorporatedInventors: Lisa A. Moore, Charlene M. Smith
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Publication number: 20040014135Abstract: The present invention provides methods that are useful for the treatment or prevention of smooth muscle disorders such as urinary incontinence and compounds that are useful in such methods.Type: ApplicationFiled: January 27, 2003Publication date: January 22, 2004Inventors: Mark Cockett, Chandra Ramanathan, Nicholas J. Lodge, Kevin Fitzgerald, Terry Stouch, Lisa Moore, Rachel M. Kindt, Jenny Kopczynski, Stephen Kohl Doberstein
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Publication number: 20030148194Abstract: High purity direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive direct deposit vitrified silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a dry direct deposit vitrified silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.Type: ApplicationFiled: January 13, 2003Publication date: August 7, 2003Inventors: John T. Brown, Stephen C. Currie, Lisa A. Moore, Susan L. Schiefelbein, Robert S. Pavlik
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Patent number: 6541168Abstract: High purity direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive direct deposit vitrified silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a dry direct deposit vitrified silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive direct deposit vitrified silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.Type: GrantFiled: April 24, 2001Date of Patent: April 1, 2003Assignee: Corning IncorporatedInventors: John T. Brown, Stephen C. Currie, Lisa A. Moore, Susan L. Schiefelbein, Robert S. Pavlik, Jr.
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Publication number: 20030021015Abstract: The invention provides coated optical lithography elements and methods of coating optical elements, and particularly optical photolithography elements for use in below 240 nm optical photolithography systems utilizing vacuum ultraviolet light (VUV) lithography wavelengths no greater than about 193 nm, such as VUV projection lithography systems utilizing wavelengths in the 193 nm or 157 nm region. The optical devices manipulate vacuum ultraviolet lithography light less than 250 nm utilizing a deposited silicon oxyfluoride film. The deposited silicon oxyfluoride optical coating assists in the manipulation of incident light and protects the underlying optical materials, layers, and surfaces.Type: ApplicationFiled: September 9, 2002Publication date: January 30, 2003Inventors: Robert L. Maier, Lisa A. Moore, Charlene M. Smith
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Patent number: 6502426Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which contains doped O2 molecules and which exhibits very high transmittance and laser transmission durability in the vacuum ultraviolet (VUV) wavelength region. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm contains intersticial O2 molecules which provide improved endurance to laser exposure. Preferably the O2 doped silicon oxyfluoride glass is characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.Type: GrantFiled: November 28, 2001Date of Patent: January 7, 2003Assignee: Corning IncorporatedInventors: Lisa A. Moore, Charlene M. Smith
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Patent number: 6492072Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.Type: GrantFiled: March 6, 2001Date of Patent: December 10, 2002Assignee: Corning IncorporatedInventors: Lisa A. Moore, Charlene Smith
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Publication number: 20020157421Abstract: A method for producing a fused silica glass containing titania includes synthesizing particles of silica and titania by delivering a mixture of a silica precursor and a titania precursor to a burner, growing a porous preform by successively depositing the particles on a deposition surface while rotating and translating the deposition surface relative to the burner, and consolidating the porous preform into a dense glass.Type: ApplicationFiled: April 27, 2001Publication date: October 31, 2002Inventors: Bradford G. Ackerman, Kenneth E. Hrdina, Lisa A. Moore, Nikki J. Russo, C. Charles Yu
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Publication number: 20020160276Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed with the silicon oxyfluoride glass having a preferred fluorine content<0.5 weight percent. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which exhibits very high transmittance in the vacuum ultraviolet (VUV) wavelength region while maintaining the excellent thermal and physical properties generally associated with high purity fused silica. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm is also characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.Type: ApplicationFiled: November 28, 2001Publication date: October 31, 2002Inventors: Lisa A. Moore, Charlene M. Smith
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Patent number: 6467313Abstract: The present invention discloses novel methods for fabricating glass articles, particularly optical fiber glass preforms, which may contain alumina, yttrium, lanthanum, erbium, or other rare earth metals as dopants. The glass articles made in accordance with the present invention exhibit radially uniform dopant profiles relative to conventional dopant methods. In addition, the overall concentration of the dopant is increased relative to analogous dopant methods.Type: GrantFiled: June 9, 2000Date of Patent: October 22, 2002Assignee: Corning IncorporatedInventors: Polly W. Chu, Lisa A. Moore, Michelle D. Pierson-Stull
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Patent number: 6466365Abstract: The invention provides coated optical lithography elements and methods of coating optical elements, and particularly optical photolithography elements for use in below 240 nm optical photolithography systems utilizing vacuum ultraviolet light (VUV) lithography wavelengths no greater than about 193 nm, such as VUV projection lithography systems utilizing wavelengths in the 193 nm or 157 nm region. The optical devices manipulate vacuum ultraviolet lithography light less than 250 nm utilizing a deposited silicon oxyfluoride film. The deposited silicon oxyfluoride optical coating assists in the manipulation of incident light and protects the underlying optical materials, layers, and surfaces.Type: GrantFiled: May 10, 2000Date of Patent: October 15, 2002Assignee: Corning IncorporatedInventors: Robert L. Maier, Lisa A. Moore, Charlene M. Smith
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Publication number: 20020134111Abstract: High purity silicon oxyfluoride glass suitable for use as a photomask substrates for photolithography applications in the VUV wavelength region below 190 nm is disclosed. The inventive silicon oxyfluoride glass is transmissive at wavelengths around 157 nm, making it particularly useful as a photomask substrate at the 157 nm wavelength region. The inventive photomask substrate is a “dry,” silicon oxyfluoride glass which contains doped O2 molecules and which exhibits very high transmittance and laser transmission durability in the vacuum ultraviolet (VUV) wavelength region. In addition to containing fluorine and having little or no OH content, the inventive silicon oxyfluoride glass suitable for use as a photomask substrate at 157 nm contains intersticial O2 molecules which provide improved endurance to laser exposure. Preferably the O2 doped silicon oxyfluoride glass is characterized by having less than 1×1017 molecules/cm3 of molecular hydrogen and low chlorine levels.Type: ApplicationFiled: November 28, 2001Publication date: September 26, 2002Inventors: Lisa A. Moore, Charlene M. Smith
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Patent number: 6418757Abstract: A method of making a glass article such as an optical waveguide preform is disclosed. The method comprises drawing a rod in at least two steps. In the first step an elongated, consolidated preform having an aperture therethrough is drawn to a reduced diameter preform. The second step involves drawing the reduced diameter preform into a rod, preferably at a lower temperature than the first step. The method substantially reduces the formation of inclusions in the glass article during drawing.Type: GrantFiled: May 25, 1999Date of Patent: July 16, 2002Assignee: Corning IncorporatedInventors: George E. Berkey, Polly W. Chu, Carl E. Crossland, Lisa A. Moore, Gang Qi, John W. Solosky
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Patent number: 6374642Abstract: An apparatus for producing a glass soot includes a first a burner having a droplet-emitting first region, a gas-emitting second region surrounding the first region, and a gas-emitting third region surrounding the second region. The first region emits a glass-forming mixture, the second region emits an inert gas, and the third region emits a combination of oxygen and a combustible gas. The apparatus further includes a combustion area having a first section proximate the first burner and a second section distal from the first burner. A glass-forming mixture is at least partially vaporized in the first section of the combustion area. The apparatus further includes at least one secondary burner having gas-emitting fourth and fifth regions. The fourth region of the secondary burner emits oxygen and the fifth region of the secondary burner emits a combustible gas.Type: GrantFiled: March 15, 2000Date of Patent: April 23, 2002Assignee: Corning IncorporatedInventors: Jeffrey L. Blackwell, Lisa A. Moore, Huailiang Wei, Daniel W. Hawtof