Patents by Inventor Lisa Pfefferle
Lisa Pfefferle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7884450Abstract: A process for growth of boron-based nanostructures, such as nanotubes and nanowires, with a controlled diameter and with controlled chemical (such as composition, doping) as well as physical (such as electrical and superconducting) properties is described. The boron nanostructures are grown on a metal-substituted MCM-41 template with pores having a uniform pore diameter of less than approximately 4 nm, and can be doped with a Group Ia or Group IIa electron donor element during or after growth of the nanostructure. Preliminary data based on magnetic susceptibility measurements suggest that Mg-doped boron nanotubes have a superconducting transition temperature on the order of 100 K.Type: GrantFiled: March 27, 2009Date of Patent: February 8, 2011Assignee: Yale UniversityInventors: Lisa Pfefferle, Dragos Ciuparu
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Publication number: 20090325790Abstract: A metal-substituted mesoporous oxide framework, such as Co-MCM-41, are disclosed which includes more than one ion species with different reduction kinetics. The reducibility correlates strongly with the pore radius of curvature, with the metal ions incorporated in smaller pores more resistant to complete reduction. The metal-ion substituted oxide framework improves catalytic processes by controlling the size of the catalytic particles forming in the pores. The metal-substituted mesoporous oxide framework can be employed in selective hydrogenation of organic chemicals, in ammonia synthesis, and in automotive catalytic exhaust systems.Type: ApplicationFiled: June 17, 2005Publication date: December 31, 2009Applicant: Yale UniversityInventors: Gary L. Haller, Sangyun Lim, Dragos Ciuparu, Yuan Chen, Yanhui Yang, Lisa Pfefferle
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Publication number: 20090253580Abstract: A process for growth of boron-based nanostructures, such as nanotubes and nanowires, with a controlled diameter and with controlled chemical (such as composition, doping) as well as physical (such as electrical and superconducting) properties is described. The boron nanostructures are grown on a metal-substituted MCM-41 template with pores having a uniform pore diameter of less than approximately 4 nm, and can be doped with a Group Ia or Group IIa electron donor element during or after growth of the nanostructure. Preliminary data based on magnetic susceptibility measurements suggest that Mg-doped boron nanotubes have a superconducting transition temperature on the order of 100 K.Type: ApplicationFiled: March 27, 2009Publication date: October 8, 2009Applicant: Yale UniversityInventors: Lisa Pfefferle, Dragos Ciuparu
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Patent number: 7531892Abstract: A process for growth of boron-based nanostructures, such as nanotubes and nanowires, with a controlled diameter and with controlled chemical (such as composition, doping) as well as physical (such as electrical and superconducting) properties is described. The boron nanostructures are grown on a metal-substituted MCM-41 template with pores having a uniform pore diameter of less than approximately 4 nm, and can be doped with a Group Ia or Group IIa electron donor element during or after growth of the nanostructure. Preliminary data based on magnetic susceptibility measurements suggest that Mg-doped boron nanotubes have a superconducting transition temperature on the order of 100 K.Type: GrantFiled: December 13, 2004Date of Patent: May 12, 2009Assignee: Yale UniversityInventors: Lisa Pfefferle, Dragos Ciuparu
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Patent number: 7485279Abstract: Transition metal-substituted MCM-41 framework structures with a high degree of structural order and a narrow pore diameter distribution were reproducibly synthesized by a hydrothermal method using a surfactant and an anti-foaming agent. The pore size and the mesoporous volume depend linearly on the surfactant chain length. The transition metals, such as cobalt, are incorporated substitutionally and highly dispersed in the silica framework. Single wall carbon nanotubes with a narrow diameter distribution that correlates with the pore diameter of the catalytic framework structure were prepared by a Boudouard reaction. Nanostructures with a specified diameter or cross-sectional area can therefore be predictably prepared by selecting a suitable pore size of the framework structure.Type: GrantFiled: December 2, 2003Date of Patent: February 3, 2009Assignee: Yale UniversityInventors: Lisa Pfefferle, Gary Haller, Dragos Ciuparu
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Patent number: 7357983Abstract: A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (±0.15 nm FWHM) was synthesized and used for the templated growth of single walled carbon nanotubes (SWNT). The physical properties of the SWNT (diameter, diameter distribution, electronic characteristic) can be controlled by the template pore size and the pore wall chemistry. The SWNT can find applications, for example, in chemical sensors and nanoscale electronic devices, such as transistors and crossbar switches.Type: GrantFiled: December 18, 2002Date of Patent: April 15, 2008Assignee: Yale UniversityInventors: Lisa Pfefferle, Gary Haller, Dragos Ciuparu
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Publication number: 20070281481Abstract: A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (±0.15 nm FWHM) was synthesized and used for the templated growth of GaN nanostructures, such as single wall nanotubes, nanopipes and nanowires. The physical properties of the GaN nanostructures (diameter, diameter distribution, electronic characteristic) can be controlled by the template pore diameter and the pore wall chemistry. GaN nanostructures can find applications, for example, in nanoscale electronic devices, such as field-emitters, and in chemical sensors.Type: ApplicationFiled: May 11, 2007Publication date: December 6, 2007Applicant: Yale UniversityInventors: Lisa Pfefferle, Dragos Ciuparu, Jung Han, Gary Haller
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Patent number: 7258807Abstract: A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (±0.15 nm FWHM) was synthesized and used for the templated growth of GaN nanostructures, such as single wall nanotubes, nanopipes and nanowires. The physical properties of the GaN nanostructures (diameter, diameter distribution, electronic characteristic) can be controlled by the template pore diameter and the pore wall chemistry. GaN nanostructures can find applications, for example, in nanoscale electronic devices, such as field-emitters, and in chemical sensors.Type: GrantFiled: December 13, 2004Date of Patent: August 21, 2007Assignee: Yale UniversityInventors: Lisa Pfefferle, Dragos Ciuparu, Jung Han, Gary Haller
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Publication number: 20050256006Abstract: A process for growth of boron-based nanostructures, such as nanotubes and nanowires, with a controlled diameter and with controlled chemical (such as composition, doping) as well as physical (such as electrical and superconducting) properties is described. The boron nanostructures are grown on a metal-substituted MCM-41 template with pores having a uniform pore diameter of less than approximately 4 nm, and can be doped with a Group Ia or Group IIa electron donor element during or after growth of the nanostructure. Preliminary data based on magnetic susceptibility measurements suggest that Mg-doped boron nanotubes have a superconducting transition temperature on the order of 100 K.Type: ApplicationFiled: December 13, 2004Publication date: November 17, 2005Inventors: Lisa Pfefferle, Dragos Ciuparu
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Publication number: 20050176249Abstract: A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (±0.15 nm FWHM) was synthesized and used for the templated growth of GaN nanostructures, such as single wall nanotubes, nanopipes and nanowires. The physical properties of the GaN nanostructures (diameter, diameter distribution, electronic characteristic) can be controlled by the template pore diameter and the pore wall chemistry. GaN nanostructures can find applications, for example, in nanoscale electronic devices, such as field-emitters, and in chemical sensors.Type: ApplicationFiled: December 13, 2004Publication date: August 11, 2005Inventors: Lisa Pfefferle, Dragos Ciuparu, Jung Han, Gary Haller
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Publication number: 20040247516Abstract: Transition metal-substituted MCM-41 framework structures with a high degree of structural order and a narrow pore diameter distribution were reproducibly synthesized by a hydrothermal method using a surfactant and an anti-foaming agent. The pore size and the mesoporous volume depend linearly on the surfactant chain length. The transition metals, such as cobalt, are incorporated substitutionally and highly dispersed in the silica framework. Single wall carbon nanotubes with a narrow diameter distribution that correlates with the pore diameter of the catalytic framework structure were prepared by a Boudouard reaction. Nanostructures with a specified diameter or cross-sectional area can therefore be predictably prepared by selecting a suitable pore size of the framework structure.Type: ApplicationFiled: December 2, 2003Publication date: December 9, 2004Inventors: Lisa Pfefferle, Gary Haller, Dragos Ciuparu
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Publication number: 20030148086Abstract: A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (±0.15 nm FWHM) was synthesized and used for the templated growth of single walled carbon nanotubes (SWNT). The physical properties of the SWNT (diameter, diameter distribution, electronic characteristic) can be controlled by the template pore size and the pore wall chemistry. The SWNT can find applications, for example, in chemical sensors and nanoscale electronic devices, such as transistors and crossbar switches.Type: ApplicationFiled: December 18, 2002Publication date: August 7, 2003Inventors: Lisa Pfefferle, Gary Haller, Dragos Ciuparu