Patents by Inventor Lisa S. Porter

Lisa S. Porter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming platinum ohmic contact to p-type silicon carbide
    Patent number: 5409859
    Abstract: A method and resulting ohmic contact structure between a high work function metal and a wide bandgap semiconductor for which the work function of the metal would ordinarily be insufficient to form an ohmic contact between the metal and the semiconductor. The structure can withstand annealing while retaining ohmic characteristics. The ohmic contact structure comprises a portion of single crystal wide bandgap semiconductor material; a contact formed of a high work function metal on the semiconductor portion; and a layer of doped p-type semiconductor material between the single crystal portion and the metal contact. The doped layer has a sufficient concentration of p-type dopant to provide ohmic behavior between the metal and the semiconductor material.
    Type: Grant
    Filed: April 22, 1994
    Date of Patent: April 25, 1995
    Assignees: Cree Research, Inc., North Carolina State University
    Inventors: Robert C. Glass, John W. Palmour, Robert F. Davis, Lisa S. Porter
  • Platinum ohmic contact to p-type silicon carbide
    Patent number: 5323022
    Abstract: A method and resulting ohmic contact structure between a high work function metal and a wide bandgap semiconductor for which the work function of the metal would ordinarily be insufficient to form an ohmic contact between the metal and the semiconductor. The structure can withstand annealing while retaining ohmic characteristics. The ohmic contact structure comprises a portion of single crystal wide bandgap semiconductor material; a contact formed of a high work function metal on the semiconductor portion; and a layer of doped p-type semiconductor material between the single crystal portion and the metal contact. The doped layer has a sufficient concentration of p-type dopant to provide ohmic behavior between the metal and the semiconductor material.
    Type: Grant
    Filed: September 10, 1992
    Date of Patent: June 21, 1994
    Assignee: North Carolina State University
    Inventors: Robert C. Glass, John W. Palmour, Robert F. Davis, Lisa S. Porter