Patents by Inventor Lissa K. Magel

Lissa K. Magel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of reducing leakage current in an integrated circuit
    Patent number: 5416030
    Abstract: A method is provided for reducing leakage current in an integrated circuit (24). A first doped region (18) having a first conductivity type is formed in a semiconductor layer (10) having a second conductivity type, such that a second doped region (20) having the first conductivity type is formed in the semiconductor layer (10). The second doped region (20) is less conductive than the first doped region (18). The first doped region (18) is removed from the semiconductor layer (10), such that the second doped region (20) substantially remains in the semiconductor layer (10). The integrated circuit (24) is formed to include the second doped region (20) and the semiconductor layer (10).
    Type: Grant
    Filed: October 14, 1993
    Date of Patent: May 16, 1995
    Assignee: Texas Instruments Incorporated
    Inventors: Jerome L. Elkind, Lissa K. Magel