Patents by Inventor Liu Chia-Cheng

Liu Chia-Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200057382
    Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.
    Type: Application
    Filed: August 7, 2019
    Publication date: February 20, 2020
    Inventors: Chieh HSIEH, Kuan-Hung CHEN, Chun-Chia HSU, Shang-Chieh CHIEN, Liu BO-TSUN, Li-Jui CHEN, Po-Chung CHENG
  • Patent number: 6169294
    Abstract: A nitride light emitting diode is fabricated on a transparent sapphire substrate. The LED is then mounted upside-down on a conductive silicon substrate with a bottom electrode to serve as the output terminal for the cathode of the LED. The LED die is partially etched to expose the anode of the LED, where a top electrode is formed. In comparison with conventional LED structure with both electrodes located on top of the die, moving one electrode to the bottom allows more light to be transmitted upward and reflects the light incident downward. For equal amount of light emission, the new structure occupies less area.
    Type: Grant
    Filed: September 8, 1998
    Date of Patent: January 2, 2001
    Assignee: Epistar Co.
    Inventors: Lee Biing-Jye, Jou Ming-Jiunn, Jacob C. Tarn, Chuan-Ming Chang, Liu Chia-Cheng
  • Patent number: 6078064
    Abstract: A transparent conductive layer is deposited between the electrode and the semiconductor diode to spread the current evenly to the diode and to reduce the series resistance. Tin indium oxide can be used as the transparent conductive layer. The transparent conductive layer is particularly applicable to a blue light emitting diode, where InGaN is used as the light emitting layer.
    Type: Grant
    Filed: May 4, 1998
    Date of Patent: June 20, 2000
    Assignee: Epistar Co.
    Inventors: Jou Ming-Jiunn, Lee Biing-Jye, Jacob C. Tarn, Chang Chuan-Ming, Liu Chia-Cheng