Abstract: The present invention relates to an ultra-high molecular weight polyethylene and a process for preparing the same, said ultra-high molecular weight polyethylene has a viscosity-average molecular weight of 150-1000×104 g/mol, a metal element content of 0-50 ppm, a bulk density of 0.30-0.55 g/cm3, a true density of 0.900-0.940 g/cm3, a melting point of 140-152° C., and a crystallinity of 40-75%, and said polyethylene satisfies at least one of condition (1) and condition (2): Condition (1): tensile elasticity modulus is greater than 250 MPa, preferably greater than 280 MPa, more preferably greater than 300 MPa, Condition (2): Young's modulus is greater than 300 MPa, preferably greater than 350 MPa. The ultra-high molecular weight polyethylene has high mechanical properties, high melting point, low metal element content and ash content, and the preparation process is simple, flexible and adjustable, and the ultra-high molecular weight ethylene copolymer has a high tensile elasticity module.

Abstract: The present invention relates to an ethylene polymer and a process for preparing the same, wherein the ethylene polymer has an average particle size of 50-3000 ?m, a bulk density of 0.28-0.55 g/cm3, a true density of 0.930-0.980 g/cm3, a melt index at a load of 2.16 Kg at 190° C. of 0.01-2500 g/10 min, a crystallinity of 30-90%, a melting point of 105-147° C., a comonomer molar insertion rate of 0.01-5 mol %, a weight-average molecular weight of 2×104 g/mol-40×104 g/mol, and a molecular weight distribution of 1.8-10. In the preparation process, raw materials containing ethylene, hydrogen gas and a comonomer are subjected to a tank-type slurry polymerization with an alkane solvent having a boiling point of 5-55° C. or a mixed alkane solvent having a saturated vapor pressure of 20-150 KPa at 20° C. as the polymerization solvent in the presence of a polyethylene catalytic system, at the molar ratio of hydrogen gas to ethylene of 0.01-20:1, preferably 0.

Abstract: The invention relates to novel methods and compositions for conferring tolerance to glyphosate to plants. The invention also provides glyphosate-tolerant plants, seeds, tissue, cells, and plant parts comprising modified EPSP synthases and recombinant DNA molecules encoding modified EPSP synthases, as well as methods of producing the same and the use thereof.

Abstract: A method for detecting abnormal direct current voltage measurement in a modular multilevel converter high voltage direct current transmission system is provided. In the method, a valve group voltage at a detection pole is obtained, voltages at voltage measurement points at the detection pole are collected, and comparison and determination are performed based on the actual arrangement of the voltage measurement points, and then whether an abnormal measurement occurs at each of the voltage measurement points is determined.

Abstract: The present invention relates to a process for continuously producing an ultra-high molecular weight polyethylene by the ethylene slurry polymerization, wherein raw materials containing ethylene and optionally at least one comonomer are subjected to a continuous slurry polymerization in a hydrogen free atmosphere in the ethylene slurry polymerization condition by using 2-6 ethylene slurry polymerization reaction tanks connected in series, and the deviations of the polymerization temperatures, the polymerization pressures, and the gas phase compositions between the tanks each other are controlled to certain ranges. The ultra-high molecular weight polyethylene having the viscosity-average molecular weight of 150-800×104 g/mol can be continuously produced. This process has flexible polymerization manner, large room for adjusting and controlling, and stable polymer performance.

Abstract: A heparin skeleton synthase originates from Neisseria animaloris, with an amino acid sequence as shown in SEQ ID NO.2 and a nucleotide sequence of the coding gene as shown in SEQ ID NO.1. Its recombinant expression level is 6.8 times that of the existing heparin skeleton synthase KfiA from Escherichia coli K5, and total enzyme activity per fermentation liquor is 5.22 times that of the heparin skeleton synthase KfiA. The heparin skeleton synthase mutants obtained through site-directed mutagenesis of the sites No. 16, No. 25, No. 30, No. 111, No. 165, and No. 172 in the amino acid sequence of the said heparin skeleton synthase all have high expression levels.

Abstract: Disclosed are an optical path system for quantum communication and a quantum communication method. The optical path system for quantum communication includes a light source module, an intensity and polarization modulation module, a polarization maintaining interference ring, a phase and intensity modulation module, a first isolator, a first polarization beam splitter, a second isolator, a beam splitter, a second polarization beam splitter, a second phase modulator, and a 90-degree Faraday rotator mirror. An optical signal may pass through a first polarization beam splitter, bypass a phase and intensity modulation module, and directly reach a polarization maintaining interference ring, thereby solving a problem of series mode interference in an optical signal circuit, and greatly improving a modulation speed of the circuit.

Abstract: A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.

Abstract: A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.

Abstract: In order to prevent silicides from getting under side walls when the silicides are formed over MOSFET formed over an SOI substrate, trenches are defined in the SOI substrate and side walls are formed over the trenches, whereby the silicides are blocked so as not to get under a gate insulator with a lower portion of each side wall as a structure convex in a downward direction of the substrate. Thus, an increase in gate withstand voltage, a decrease in gate leakage current and control on a short channel effect are achieved.

Abstract: A method of analyzing a composition depth profile of a solid surface layer, wherein actually-measured intensity of photoelectrons emitted from the solid surface layer by irradiating the solid surface layer containing at least two or more species of element with X rays and photoelectron calculated intensity obtained by making a calculation assuming an elemental composition ratio for each of a plurality of sub-layers into which the solid surface layer has been temporarily divided are utilized to determine a composition depth profile of the solid surface layer, the method including a step of at least repeating an approximate calculation including: distinguishing a specified sub-layer such that the calculated intensity best converges to the actually-measured intensity in the sub-layers; and correcting an elemental composition ratio at least for the specified sub-layer so that the calculated intensity converges to the actually-measured intensity, thereby determining the composition depth profile of the solid surfa

Abstract: A method of analyzing a composition depth profile of a solid surface layer, wherein actually-measured intensity of photoelectrons emitted from the solid surface layer by irradiating the solid surface layer containing at least two or more species of element with X rays and photoelectron calculated intensity obtained by making a calculation assuming an elemental composition ratio for each of a plurality of sub-layers into which the solid surface layer has been temporarily divided are utilized to determine a composition depth profile of the solid surface layer, the method including a step of at least repeating an approximate calculation including: distinguishing a specified sub-layer such that the calculated intensity best converges to the actually-measured intensity in the sub-layers; and correcting an elemental composition ratio at least for the specified sub-layer so that the calculated intensity converges to the actually-measured intensity, thereby determining the composition depth profile of the solid surfa

Abstract: In order to prevent suicides from getting under side walls when the suicides are formed over MOSFET formed over an SOT substrate, trenches are defined in the SOI substrate and side walls are formed over the trenches, whereby the suicides are blocked so as not to get under a gate insulator with a lower portion of each side wall as a structure convex in a downward direction of the substrate. Thus, an increase in gate withstand voltage, a decrease in gate leakage current and control on a short channel effect are achieved.

Abstract: The semiconductor wafer evaluation method of the present invention comprises the steps of: preparing a substrate embedded with an oxide film; removing the oxide film from a surface of the substrate so as to expose a silicon layer; removing silicon portions within the silicon film and the embedded oxide film by etching so as to form holes within the embedded oxide layer in a first etching step; removing the silicon substrate below the holes by etching in a second etching step; and measuring and evaluating the holes enlarged by the first and second etching steps.