Abstract: A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.

Abstract: A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.

Abstract: In order to prevent silicides from getting under side walls when the silicides are formed over MOSFET formed over an SOI substrate, trenches are defined in the SOI substrate and side walls are formed over the trenches, whereby the silicides are blocked so as not to get under a gate insulator with a lower portion of each side wall as a structure convex in a downward direction of the substrate. Thus, an increase in gate withstand voltage, a decrease in gate leakage current and control on a short channel effect are achieved.

Abstract: A method of analyzing a composition depth profile of a solid surface layer, wherein actually-measured intensity of photoelectrons emitted from the solid surface layer by irradiating the solid surface layer containing at least two or more species of element with X rays and photoelectron calculated intensity obtained by making a calculation assuming an elemental composition ratio for each of a plurality of sub-layers into which the solid surface layer has been temporarily divided are utilized to determine a composition depth profile of the solid surface layer, the method including a step of at least repeating an approximate calculation including: distinguishing a specified sub-layer such that the calculated intensity best converges to the actually-measured intensity in the sub-layers; and correcting an elemental composition ratio at least for the specified sub-layer so that the calculated intensity converges to the actually-measured intensity, thereby determining the composition depth profile of the solid surfa

Abstract: A method of analyzing a composition depth profile of a solid surface layer, wherein actually-measured intensity of photoelectrons emitted from the solid surface layer by irradiating the solid surface layer containing at least two or more species of element with X rays and photoelectron calculated intensity obtained by making a calculation assuming an elemental composition ratio for each of a plurality of sub-layers into which the solid surface layer has been temporarily divided are utilized to determine a composition depth profile of the solid surface layer, the method including a step of at least repeating an approximate calculation including: distinguishing a specified sub-layer such that the calculated intensity best converges to the actually-measured intensity in the sub-layers; and correcting an elemental composition ratio at least for the specified sub-layer so that the calculated intensity converges to the actually-measured intensity, thereby determining the composition depth profile of the solid surfa

Abstract: In order to prevent suicides from getting under side walls when the suicides are formed over MOSFET formed over an SOT substrate, trenches are defined in the SOI substrate and side walls are formed over the trenches, whereby the suicides are blocked so as not to get under a gate insulator with a lower portion of each side wall as a structure convex in a downward direction of the substrate. Thus, an increase in gate withstand voltage, a decrease in gate leakage current and control on a short channel effect are achieved.

Abstract: The semiconductor wafer evaluation method of the present invention comprises the steps of: preparing a substrate embedded with an oxide film; removing the oxide film from a surface of the substrate so as to expose a silicon layer; removing silicon portions within the silicon film and the embedded oxide film by etching so as to form holes within the embedded oxide layer in a first etching step; removing the silicon substrate below the holes by etching in a second etching step; and measuring and evaluating the holes enlarged by the first and second etching steps.