Abstract: This application relates to the technical field of images, and provides a method for training a light filling model, an image processing method, and a related device thereof. The method includes: obtain an albedo portrait training image and a normal portrait training image; performing processing on the refined matte portrait training image, the plurality of frames of OLAT training images, and a panoramic environment image to obtain a to-be-light-filled composite rendered image and a light-filled composite rendered image; and training an initial light filling model by using the albedo portrait training image, the normal portrait training image, the to-be-light-filled composite rendered image, and the light-filled composite rendering image, to obtain a target light filling model. In this application, by using a deep learning method, a portrait and an environment in a to-be-photographed scene are filled with light to improve sharpness and contrast of the portrait.

Abstract: Provided are an augmented reality optical module, including a first lens, a second lens, a third lens group, a first polarization modulation unit provided on a side of the third lens group and configured to modulate the light emitted by the image source into first circularly polarized light, an angle selection film provided on a first surface of one side of the first lens and configured to reflect light having an incidence angle greater than or equal to a first angle and transmit light having an incidence angle smaller than or equal to a second angle, and a second polarization modulation unit provided on the other side of the first lens and configured to modulate incident circularly polarized light into linearly polarized light.

Abstract: Provided are an augmented reality optical module, including a first lens, a second lens, a third lens group, a first polarization modulation unit provided on a side of the third lens group and configured to modulate the light emitted by the image source into first circularly polarized light, an angle selection film provided on a first surface of one side of the first lens and configured to reflect light having an incidence angle greater than or equal to a first angle and transmit light having an incidence angle smaller than or equal to a second angle, and a second polarization modulation unit provided on the other side of the first lens and configured to modulate incident circularly polarized light into linearly polarized light.

Abstract: A semiconductor structure and a method for forming same, the forming method including: providing a base, where a dummy gate structure is formed on the base, an interlayer dielectric layer is formed on the base the dummy gate structure exposes, and the interlayer dielectric layer exposes the top of the dummy gate structure; forming an isolation structure in the interlayer dielectric layer between adjacent dummy gate structures, where the isolation structure further extends into the base; after forming the isolation structure, removing the dummy gate structure and forming a gate opening in the interlayer dielectric layer; filling a gate electrode material into the gate opening, where the gate electrode material further covers the top of the interlayer dielectric layer; and performing at least one polishing treatment to remove the gate electrode material above the top of the interlayer dielectric layer and retaining the gate electrode material in the gate opening as a gate electrode layer, where the step of the

Abstract: A semiconductor structure and a method for forming same, the forming method including: providing a base, where a dummy gate structure is formed on the base, an interlayer dielectric layer is formed on the base the dummy gate structure exposes, and the interlayer dielectric layer exposes the top of the dummy gate structure; forming an isolation structure in the interlayer dielectric layer between adjacent dummy gate structures, where the isolation structure further extends into the base; after forming the isolation structure, removing the dummy gate structure and forming a gate opening in the interlayer dielectric layer; filling a gate electrode material into the gate opening, where the gate electrode material further covers the top of the interlayer dielectric layer; and performing at least one polishing treatment to remove the gate electrode material above the top of the interlayer dielectric layer and retaining the gate electrode material in the gate opening as a gate electrode layer, where the step of the

Abstract: The present invention relates to a system for functional expression of higher plant nitrate transporter (Nrt) genes in Pichia pastoris, an in vivo nitrate uptake assay using these Pichia pastoris transformants and an assay for readily identifying successful transformants.

Abstract: The present invention relates to a system for functional expression of higher plant nitrate transporter (Nrt) genes in Pichia pastoris, an in vivo nitrate uptake assay using these Pichia pastoris transformants and an assay for readily identifying successful transformants.

Abstract: The present invention relates to a system for functional expression of higher plant nitrate transporter (Nrt) genes in Pichia pastoris, an in vivo nitrate uptake assay using these Pichia pastoris transformants, and an assay for readily identifying successful transformants.