Patents by Inventor Liu Yuan-Hung

Liu Yuan-Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming dual damascene structures
    Patent number: 6147005
    Abstract: A method for forming the dual damascene structure over a semiconductor substrate is disclosed in the present invention. First, a first dielectric layer is formed on the semiconductor substrate. An etch stopping layer is formed on the first dielectric layer. And a second dielectric layer is formed on the etch stopping layer. The second dielectric layer is then etched till the etch stopping layer to form a first opening and a second opening on the second dielectric layer. It is noted that the size of the second opening is bigger than that of the first opening. A polymer layer is next formed on the second dielectric layer and the etch stopping layer to close the first opening and to fill into a portion of the second opening for defining a third opening in the second opening.
    Type: Grant
    Filed: July 23, 1999
    Date of Patent: November 14, 2000
    Assignee: Worldwide Semiconductor Manufacturing Corp.
    Inventors: Yeur-Luen Tu, Liu Yuan-Hung