Patents by Inventor Liu Zhenning

Liu Zhenning has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of switching and switching device for solid state power controller applications
    Patent number: 7741883
    Abstract: A solid state switching device (SSSD) for AC and DC high power solid state power controller includes, for DC applications, a MOSFET and an IGBT connected in parallel and an optional zener diode connecting a collector and a gate of the IGBT. For AC applications, the SSSD includes a “back to back” pair of MOSFETs connected in parallel with a pair of counter-parallel IGBTs, each in series with a diode, and, optionally, zener diodes “back to back” with conventional diodes connecting a collector and a gate of each of the IGBT. A method of switching establishes a sequence of turning on/off the MOSFET(s) and the IGBT(s) wherein the IGBT(s) turn on before and turn off after the MOSFET(s). A negative feedback prevents a voltage of SSSD rising above predetermined level.
    Type: Grant
    Filed: July 21, 2008
    Date of Patent: June 22, 2010
    Assignee: Honeywell International Inc.
    Inventors: Randy Fuller, Liu Zhenning
  • METHOD OF SWITCHING AND SWITCHING DEVICE FOR SOLID STATE POWER CONTROLLER APPLICATIONS
    Publication number: 20090289691
    Abstract: A solid state switching device (SSSD) for AC and DC high power solid state power controller includes, for DC applications, a MOSFET and an IGBT connected in parallel and an optional zener diode connecting a collector and a gate of the IGBT. For AC applications, the SSSD includes a “back to back” pair of MOSFETs connected in parallel with a pair of counter-parallel IGBTs, each in series with a diode, and, optionally, zener diodes “back to back” with conventional diodes connecting a collector and a gate of each of the IGBT. A method of switching establishes a sequence of turning on/off the MOSFET(s) and the IGBT(s) wherein the IGBT(s) turn on before and turn off after the MOSFET(s). A negative feedback prevents a voltage of SSSD rising above predetermined level.
    Type: Application
    Filed: July 21, 2008
    Publication date: November 26, 2009
    Applicant: HONEYWELL INTERNATIONAL INC.
    Inventors: Randy Fuller, Liu Zhenning