Abstract: Apparatus (2) for sensing and measuring and/or shear components of a force at an interface between two surfaces, which apparatus (2) comprises: (i) at least one flexible means (4) for receiving the pressure and/or shear components of the force; and (ii) transducer means (6) for producing electrical signals consequent upon movement of the flexible means (4) in response to the pressure and/or shear components of the force, and the apparatus (2) being such that: (iii) the flexible means (4) comprises first and second electrode parts (18, 20) which are spaced apart by the flexible means (12); (iv) the first and second electrode parts (18, 20) move solely towards each other as a result of the pressure component of the force being applied to the flexible means (4); and (v) the first and second electrode parts (18, 20) move towards and parallel to each other as a result of the shear component of the force being applied to the flexible means (4).

Abstract: Apparatus (2) for sensing and measuring and/or shear components of a force at an interface between two surfaces, which apparatus (2) comprises: (i) at least one flexible means (4) for receiving the pressure and/or shear components of the force; and (ii) transducer means (6) for producing electrical signals consequent upon movement of the flexible means (4) in response to the pressure and/or shear components of the force, and the apparatus (2) being such that: (iii) the flexible means (4) comprises first and second electrode parts (18, 20) which are spaced apart by the flexible means (12); (iv) the first and second electrode parts (18, 20) move solely towards each other as a result of the pressure component of the force being applied to the flexible means (4); and (v) the first and second electrode parts (18, 20) move towards and parallel to each other as a result of the shear component of the force being applied to the flexible means (4).

Abstract: A method of fabricating microelectromechanical (MEMs) systems and in particular for producing silicon carbide (SiC) MEMs devices with improved mechanical properties. The method comprises reacting a dry etch plasma with a layered microstructure; the layered microstructure having an etch mask, a sacrificial layer and a device layer arranged between the etch mask and the sacrificial layer. The dry etch plasma is introduced into the environment of the layered microstructure such that the device layer is etched anisotropically and the sacrificial layer is etched substantially isotropically. The invention also provides a method for tuning MEMs devices by material de-stressing using an inert gas in the dry etch plasma.

Abstract: A method of fabricating microelectromechanical (MEMs) systems and in particular for producing silicon carbide (SiC) MEMs devices with improved mechanical properties. The method comprises reacting a dry etch plasma with a layered microstructure; the layered microstructure having an etch mask, a sacrificial layer and a device layer arranged between the etch mask and the sacrificial layer. The dry etch plasma is introduced into the environment of the layered microstructure such that the device layer is etched anisotropically and the sacrificial layer is etched substantially isotropically. The invention also provides a method for tuning MEMs devices by material de-stressing using an inert gas in the dry etch plasma.