Patents by Inventor Liumin ZOU
Liumin ZOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11515439Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.Type: GrantFiled: December 11, 2020Date of Patent: November 29, 2022Assignee: SHARP KABUSHIKI KAISHAInventors: Teruaki Higo, Chikao Okamoto, Naoki Asano, Masamichi Kobayashi, Natsuko Fujiwara, Rihito Suganuma, Toshihiko Sakai, Kazuya Tsujino, Liumin Zou
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Patent number: 11316061Abstract: n-type amorphous semiconductor layers (4) and p-type amorphous semiconductor layers (5) are alternately disposed on the back surface of a semiconductor substrate (1) so as to be separated from each other at a desired interval paralleled with the direction of the surface of the semiconductor substrate (1). An electrode (6) is disposed on the n-type amorphous semiconductor layer (4), and an electrode (7) is disposed on the p-type amorphous semiconductor layer (5). A protective film (8) includes an insulating film, and is disposed on a passivation film (3), the n-type amorphous semiconductor layer (4), the p-type amorphous semiconductor layer (5), and the electrodes (6, 7), so as to be in contact with the passivation film (3), the n-type amorphous semiconductor layer (4), the p-type amorphous semiconductor layer (5), and the electrodes (6, 7).Type: GrantFiled: October 15, 2020Date of Patent: April 26, 2022Assignee: SHARP KABUSHIKI KAISHAInventors: Takeshi Kamikawa, Masatomi Harada, Toshihiko Sakai, Tokuaki Kuniyoshi, Liumin Zou
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Patent number: 11227961Abstract: There is provided a photoelectric conversion device which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline silicon layer from increasing, and can improve the element characteristics. A photoelectric conversion element (10) includes a silicon substrate (12), a first non-crystalline semiconductor layer (20n), a second non-crystalline semiconductor layer (20p), a first electrode (22n), and a second electrode (22p). One electrode (22n) includes first conductive layers (26n, 26p), and second conductive layers (28n, 28p). The first conductive layers (26n, 26p) have a first metal as a main component. The second conductive layers (28n, 28p) contain a second metal which is more likely to be oxidized than the first metal, are formed to be in contact with the first conductive layers (26n, 26p), and are disposed to be closer to the silicon substrate (12) than the first conductive layers (26n, 26p).Type: GrantFiled: October 24, 2014Date of Patent: January 18, 2022Assignee: SHARP KABUSHIKI KAISHAInventors: Kenji Kimoto, Naoki Koide, Liumin Zou, Masamichi Kobayashi
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Patent number: 11195965Abstract: Wires (22) electrically connecting solar cells (10) include first wires (22a) and second wires (22b). The first wires (22a) are connected to the first-conductivity-type electrodes (12) of a first one of the solar cells (10) and the second-conductivity-type electrodes (13) of a second one of the solar cells 10 that is adjacent to the first one of the solar cells (10). The second wires (22b) are connected to the second-conductivity-type electrodes (13) of the first one of the solar cells (10) and the first-conductivity-type electrodes (12) of the second one of the solar cells (10). The second wires (22b) are electrically separated by holes (21a) extending through both the second wires (22b) and an insulating base member (21).Type: GrantFiled: October 23, 2018Date of Patent: December 7, 2021Assignee: SHARP KABUSHIKI KAISHAInventors: Yoshihisa Dotta, Hajime Horinaka, Kohichi Katohno, Liumin Zou, Tetsuyoshi Inoue
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Publication number: 20210098638Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.Type: ApplicationFiled: December 11, 2020Publication date: April 1, 2021Inventors: TERUAKI HIGO, CHIKAO OKAMOTO, NAOKI ASANO, MASAMICHI KOBAYASHI, NATSUKO FUJIWARA, RIHITO SUGANUMA, TOSHIHIKO SAKAI, KAZUYA TSUJINO, LIUMIN ZOU
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Publication number: 20210050467Abstract: n-type amorphous semiconductor layers (4) and p-type amorphous semiconductor layers (5) are alternately disposed on the back surface of a semiconductor substrate (1) so as to be separated from each other at a desired interval paralleled with the direction of the surface of the semiconductor substrate (1). An electrode (6) is disposed on the n-type amorphous semiconductor layer (4), and an electrode (7) is disposed on the p-type amorphous semiconductor layer (5). A protective film (8) includes an insulating film, and is disposed on a passivation film (3), the n-type amorphous semiconductor layer (4), the p-type amorphous semiconductor layer (5), and the electrodes (6, 7), so as to be in contact with the passivation film (3), the n-type amorphous semiconductor layer (4), the p-type amorphous semiconductor layer (5), and the electrodes (6, 7).Type: ApplicationFiled: October 15, 2020Publication date: February 18, 2021Inventors: Takeshi Kamikawa, Masatomi Harada, Toshihiko Sakai, Tokuaki Kuniyoshi, Liumin Zou
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Patent number: 10903379Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction. Therefore, the photovoltaic device has an improved heat resistance.Type: GrantFiled: March 7, 2016Date of Patent: January 26, 2021Assignee: SHARP KABUSHIKI KAISHAInventors: Teruaki Higo, Chikao Okamoto, Naoki Asano, Masamichi Kobayashi, Natsuko Fujiwara, Rihito Suganuma, Toshihiko Sakai, Kazuya Tsujino, Liumin Zou
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Patent number: 10658526Abstract: In a photovoltaic device (1), first amorphous semiconductor portions (102n) and second amorphous semiconductor portions (102p) are provided alternately on one of faces of a semiconductor substrate (101). Each first amorphous semiconductor portion (102n) has at least one first amorphous semiconductor strip (1020n), and each second amorphous semiconductor portion (102p) has at least one second amorphous semiconductor strip (1020p). A plurality of first electrodes (103n) are provided spaced apart from each other on each first amorphous semiconductor strip (1020n), and a plurality of second electrodes (103p) are provided spaced apart from each other on each second amorphous semiconductor strip (1020p).Type: GrantFiled: February 24, 2016Date of Patent: May 19, 2020Assignee: SHARP KABUSHIKI KAISHAInventors: Masatomi Harada, Kenichi Higashi, Takeshi Kamikawa, Toshihiko Sakai, Tokuaki Kuniyoshi, Kazuya Tsujino, Liumin Zou
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Patent number: 10516066Abstract: A photovoltaic conversion device (10) includes a semiconductor substrate (1), a passivation film (3), n-type amorphous semiconductor strips, p-type amorphous semiconductor strips (5p), and electrodes (7). The passivation film (3) is formed on one of the surfaces of the semiconductor substrate (1). The n- and p-type amorphous semiconductor strips are arranged alternately as viewed along an in-plane direction of the semiconductor substrate (1) (Y-axis direction). The p-type amorphous semiconductor strips (5p) have reduced-thickness regions (51) at some intervals as viewed along the length direction of the p-type amorphous semiconductor strips (5p) (X-axis direction). The n-type amorphous semiconductor strips have a similar structure. The electrodes (7) are provided on the p-type amorphous semiconductor strips (5p), but not in areas where the reduced-thickness regions (51) have a positive curvature r with respect to the length direction of the reduced-thickness regions (51).Type: GrantFiled: March 17, 2017Date of Patent: December 24, 2019Assignee: SHARP KABUSHIKI KAISHAInventors: Makoto Higashikawa, Toshihiko Sakai, Kazuya Tsujino, Liumin Zou, Teruaki Higo, Yuta Matsumoto
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Patent number: 10505064Abstract: A photovoltaic device and a photovoltaic module are provided that suppressing diffusion of boron and thereby improving conversion efficiency. A photovoltaic device 10 includes: a semiconductor substrate 1; an intrinsic amorphous semiconductor layer 3 provided on the semiconductor substrate 1; n-type amorphous semiconductor strips 4 containing phosphorus as a dopant; and p-type amorphous semiconductor strips 5 containing boron as a dopant, the n- and p-type amorphous semiconductor strips 4 and 5 being provided alternately on the intrinsic amorphous semiconductor layer 3 as viewed along an in-plane direction. Each n-type amorphous semiconductor strip 4 includes a reduced-thickness region TD(n) on a face thereof adjacent to one of the p-type amorphous semiconductor strips 5. Each p-type amorphous semiconductor strip 5 includes a reduced-thickness region TD(p) on a face thereof adjacent to one of the n-type amorphous semiconductor strips 4.Type: GrantFiled: August 30, 2016Date of Patent: December 10, 2019Assignee: SHARP KABUSHIKI KAISHAInventors: Tokuaki Kuniyoshi, Kenichi Higashi, Takeshi Kamikawa, Masatomi Harada, Toshihiko Sakai, Kazuya Tsujino, Liumin Zou
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Patent number: 10355145Abstract: A photovoltaic device (1) includes: an i-type amorphous semiconductor layer (102i) formed in contact with one of the surfaces of a semiconductor substrate (101); p-type amorphous semiconductor strips (102p) spaced apart from each other and provided on the i-type amorphous semiconductor layer (102i); and n-type amorphous semiconductor strips (102n) spaced apart from each other and provided on the i amorphous semiconductor layer (102i), each n-type amorphous semiconductor strip (102n) being adjacent to at least one of the p-type amorphous semiconductor strips (102p) as traced along an in-plane direction of the semiconductor substrate (101). The photovoltaic device (1) further includes electrodes (103) as a protection layer formed in contact with the i-type amorphous semiconductor layer (102) between adjacent p-type amorphous semiconductor strips (102p) and between adjacent n-type amorphous semiconductor strips (102n).Type: GrantFiled: February 24, 2016Date of Patent: July 16, 2019Assignee: SHARP KABUSHIKI KAISHAInventors: Masatomi Harada, Kenichi Higashi, Takeshi Kamikawa, Toshihiko Sakai, Tokuaki Kuniyoshi, Kazuya Tsujino, Liumin Zou
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Patent number: 10293368Abstract: A film-forming method for forming a thin film on a substrate includes a contact step, an external force removal step, and a film-forming step. At the contact step (step B), the substrate 30 and a member 31 in contact with one surface of the substrate is stacked, and the substrate 30 and the member 31 in contact with one surface of the substrate are placed under vacuum while an external force is applied in a direction in which the substrate 30 and the member 31 in contact with one surface of the substrate are stacked. At the external force removal step (step C), the external force is removed at atmospheric pressure or under vacuum. At a film-forming step (step E), a thin film is formed on the one surface or the other surface of the substrate 30.Type: GrantFiled: February 24, 2016Date of Patent: May 21, 2019Assignee: SHARP KABUSHIKI KAISHAInventors: Toshihiko Sakai, Takeshi Kamikawa, Masatomi Harada, Tokuaki Kuniyoshi, Liumin Zou
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Publication number: 20190131466Abstract: Wires (22) electrically connecting solar cells (10) include first wires (22a) and second wires (22b). The first wires (22a) are connected to the first-conductivity-type electrodes (12) of a first one of the solar cells (10) and the second-conductivity-type electrodes (13) of a second one of the solar cells 10 that is adjacent to the first one of the solar cells (10). The second wires (22b) are connected to the second-conductivity-type electrodes (13) of the first one of the solar cells (10) and the first-conductivity-type electrodes (12) of the second one of the solar cells (10). The second wires (22b) are electrically separated by holes (21a) extending through both the second wires (22b) and an insulating base member (21).Type: ApplicationFiled: October 23, 2018Publication date: May 2, 2019Inventors: YOSHIHISA DOTTA, HAJIME HORINAKA, KOHICHI KATOHNO, LIUMIN ZOU, TETSUYOSHI INOUE
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Publication number: 20190103499Abstract: A photovoltaic conversion device (10) includes a semiconductor substrate (1), a passivation film (3), n-type amorphous semiconductor strips, p-type amorphous semiconductor strips (5p), and electrodes (7). The passivation film (3) is formed on one of the surfaces of the semiconductor substrate (1). The n- and p-type amorphous semiconductor strips are arranged alternately as viewed along an in-plane direction of the semiconductor substrate (1) (Y-axis direction). The p-type amorphous semiconductor strips (5p) have reduced-thickness regions (51) at some intervals as viewed along the length direction of the p-type amorphous semiconductor strips (5p) (X-axis direction). The n-type amorphous semiconductor strips have a similar structure. The electrodes (7) are provided on the p-type amorphous semiconductor strips (5p), but not in areas where the reduced-thickness regions (51) have a positive curvature r with respect to the length direction of the reduced-thickness regions (51).Type: ApplicationFiled: March 17, 2017Publication date: April 4, 2019Inventors: MAKOTO HIGASHIKAWA, TOSHIHIKO SAKAI, KAZUYA TSUJINO, LIUMIN ZOU, TERUAKI HIGO, YUTA MATSUMOTO
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Publication number: 20190044018Abstract: A photovoltaic device and a photovoltaic module are provided that suppressing diffusion of boron and thereby improving conversion efficiency. A photovoltaic device 10 includes: a semiconductor substrate 1; an intrinsic amorphous semiconductor layer 3 provided on the semiconductor substrate 1; n-type amorphous semiconductor strips 4 containing phosphorus as a dopant; and p-type amorphous semiconductor strips 5 containing boron as a dopant, the n- and p-type amorphous semiconductor strips 4 and 5 being provided alternately on the intrinsic amorphous semiconductor layer 3 as viewed along an in-plane direction. Each n-type amorphous semiconductor strip 4 includes a reduced-thickness region TD(n) on a face thereof adjacent to one of the p-type amorphous semiconductor strips 5. Each p-type amorphous semiconductor strip 5 includes a reduced-thickness region TD(p) on a face thereof adjacent to one of the n-type amorphous semiconductor strips 4.Type: ApplicationFiled: August 30, 2016Publication date: February 7, 2019Applicant: Sharp Kabushiki KaishaInventors: Tokuaki KUNIYOSHI, Kenichi HIGASHI, Takeshi KAMIKAWA, Masatomi HARADA, Toshihiko SAKAI, Kazuya TSUJINO, Liumin ZOU
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Publication number: 20180190840Abstract: In a photovoltaic device (1), first amorphous semiconductor portions (102n) and second amorphous semiconductor portions (102p) are provided alternately on one of faces of a semiconductor substrate (101). Each first amorphous semiconductor portion (102n) has at least one first amorphous semiconductor strip (1020n), and each second amorphous semiconductor portion (102p) has at least one second amorphous semiconductor strip (1020p). A plurality of first electrodes (103n) are provided spaced apart from each other on each first amorphous semiconductor strip (1020n), and a plurality of second electrodes (103p) are provided spaced apart from each other on each second amorphous semiconductor strip (1020p).Type: ApplicationFiled: February 24, 2016Publication date: July 5, 2018Applicant: Sharp Kabushiki KaishaInventors: MASATOMI HARADA, KENICHI HIGASHI, TAKESHI KAMIKAWA, TOSHIHIKO SAKAI, TOKUAKI KUNIYOSHI, KAZUYA TSUJINO, LIUMIN ZOU
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Publication number: 20180161808Abstract: A film-forming method for forming a thin film on a substrate includes a contact step, an external force removal step, and a film-forming step. At the contact step (step B), the substrate 30 and a member 31 in contact with one surface of the substrate is stacked, and the substrate 30 and the member 31 in contact with one surface of the substrate are placed under vacuum while an external force is applied in a direction in which the substrate 30 and the member 31 in contact with one surface of the substrate are stacked. At the external force removal step (step C), the external force is removed at atmospheric pressure or under vacuum. At a film-forming step (step E), a thin film is formed on the one surface or the other surface of the substrate 30.Type: ApplicationFiled: February 24, 2016Publication date: June 14, 2018Inventors: TOSHIHIKO SAKAI, TAKESHI KAMIKAWA, MASATOMI HARADA, TOKUAKI KUNIYOSHI, LIUMIN ZOU
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Publication number: 20180138323Abstract: A photovoltaic device (1) includes: an i-type amorphous semiconductor layer (102i) formed in contact with one of the surfaces of a semiconductor substrate (101); p-type amorphous semiconductor strips (102p) spaced apart from each other and provided on the i-type amorphous semiconductor layer (102i); and n-type amorphous semiconductor strips (102n) spaced apart from each other and provided on the i amorphous semiconductor layer (102i), each n-type amorphous semiconductor strip (102n) being adjacent to at least one of the p-type amorphous semiconductor strips (102p) as traced along an in-plane direction of the semiconductor substrate (101). The photovoltaic device (1) further includes electrodes (103) as a protection layer formed in contact with the i-type amorphous semiconductor layer (102) between adjacent p-type amorphous semiconductor strips (102) and between adjacent n-type amorphous semiconductor strips (102n).Type: ApplicationFiled: February 24, 2016Publication date: May 17, 2018Inventors: MASATOMI HARADA, KENICHI HIGASHI, TAKESHI KAMIKAWA, TOSHIHIKO SAKAI, TOKUAKI KUNIYOSHI, KAZUYA TSUJINO, LIUMIN ZOU
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Publication number: 20180069139Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction. Therefore, the photovoltaic device has an improved heat resistance.Type: ApplicationFiled: March 7, 2016Publication date: March 8, 2018Inventors: TERUAKI HIGO, CHIKAO OKAMOTO, NAOKI ASANO, MASAMICHI KOBAYASHI, NATSUKO FUJIWARA, RIHITO SUGANUMA, TOSHIHIKO SAKAI, KAZUYA TSUJINO, LIUMIN ZOU
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Publication number: 20170338365Abstract: n-type amorphous semiconductor layers (4) and p-type amorphous semiconductor layers (5) are alternately disposed on the back surface of a semiconductor substrate (1) so as to be separated from each other at a desired interval paralleled with the direction of the surface of the semiconductor substrate (1). An electrode (6) is disposed on the n-type amorphous semiconductor layer (4), and an electrode (7) is disposed on the p-type amorphous semiconductor layer (5). A protective film (8) includes an insulating film, and is disposed on a passivation film (3), the n-type amorphous semiconductor layer (4), the p-type amorphous semiconductor layer (5), and the electrodes (6, 7), so as to be in contact with the passivation film (3), the n-type amorphous semiconductor layer (4), the p-type amorphous semiconductor layer (5), and the electrodes (6, 7).Type: ApplicationFiled: October 23, 2015Publication date: November 23, 2017Applicant: Sharp Kabushiki KaishaInventors: TAKESHI KAMIKAWA, MASATOMI HARADA, TOSHIHIKO SAKAI, TOKUAKI KUNIYOSHI, LIUMIN ZOU