Patents by Inventor Liusha QIN

Liusha QIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MASK PATTERN
    Publication number: 20220351965
    Abstract: A mask pattern for forming the semiconductor structure is provided. The mask pattern includes a first mask pattern and a second mask pattern. The first mask pattern includes a plurality of first target patterns, and the plurality of first target patterns are arranged along a first direction. The second mask pattern includes a plurality of second target patterns, and the plurality of second target patterns are arranged along the first direction. When the first mask pattern overlaps the second mask pattern, one of the plurality of first target patterns partially overlaps a corresponding one of the plurality of second target patterns.
    Type: Application
    Filed: July 15, 2022
    Publication date: November 3, 2022
    Inventors: Qiang SHU, Yingchun ZHANG, Liusha QIN
  • Mask pattern, semiconductor structure and fabrication method thereof
    Patent number: 11424122
    Abstract: A mask pattern, a semiconductor structure and a method for forming the semiconductor structure are provided. The mask pattern includes a first mask pattern and a second mask pattern. The first mask pattern includes a plurality of first target patterns, and the plurality of first target patterns are arranged along a first direction. The second mask pattern includes a plurality of second target patterns, and the plurality of second target patterns are arranged along the first direction. When the first mask pattern overlaps the second mask pattern, one of the plurality of first target patterns partially overlaps a corresponding one of the plurality of second target patterns.
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: August 23, 2022
    Assignees: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation
    Inventors: Qiang Shu, Yingchun Zhang, Liusha Qin
  • MASK PATTERN, SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
    Publication number: 20210210343
    Abstract: A mask pattern, a semiconductor structure and a method for forming the semiconductor structure are provided. The mask pattern includes a first mask pattern and a second mask pattern. The first mask pattern includes a plurality of first target patterns, and the plurality of first target patterns are arranged along a first direction. The second mask pattern includes a plurality of second target patterns, and the plurality of second target patterns are arranged along the first direction. When the first mask pattern overlaps the second mask pattern, one of the plurality of first target patterns partially overlaps a corresponding one of the plurality of second target patterns.
    Type: Application
    Filed: September 29, 2020
    Publication date: July 8, 2021
    Inventors: Qiang SHU, Yingchun ZHANG, Liusha QIN