Abstract: A Doherty power amplifier includes a main power amplification circuit, an auxiliary power amplification circuit, a connection circuit, and an impedance conversion circuit. An output end of the main power amplification circuit and an output end of the auxiliary power amplification circuit are connected to two ends of the connection circuit separately by using bonding wires. The output end of the auxiliary power amplification circuit is further connected to one end of the impedance conversion circuit by using a bonding wire, and the other end of the impedance conversion circuit is connected to an output load.

Abstract: Embodiments for a power amplifier that can increase a low-frequency resonance frequency are provided. The power amplifier includes a power amplifying transistor die, a first metal oxide semiconductor capacitor, a direct current decoupling capacitor, and an output matching network, where: a drain of the power amplifying transistor die is connected to a first end of the first metal oxide semiconductor capacitor by using a bonding wire, and a second end of the first metal oxide semiconductor capacitor is grounded; the drain of the power amplifying transistor die is directly connected to the output matching network by using a bonding wire; a source of the power amplifying transistor die is grounded; the first end of the first metal oxide semiconductor capacitor is connected to one end of the direct current decoupling capacitor by using a bonding wire; and the other end of the direct current decoupling capacitor is grounded.

Abstract: Embodiments for a power amplifier that can increase a low-frequency resonance frequency are provided. The power amplifier includes a power amplifying transistor die, a first metal oxide semiconductor capacitor, a direct current decoupling capacitor, and an output matching network, where: a drain of the power amplifying transistor die is connected to a first end of the first metal oxide semiconductor capacitor by using a bonding wire, and a second end of the first metal oxide semiconductor capacitor is grounded; the drain of the power amplifying transistor die is directly connected to the output matching network by using a bonding wire; a source of the power amplifying transistor die is grounded; the first end of the first metal oxide semiconductor capacitor is connected to one end of the direct current decoupling capacitor by using a bonding wire; and the other end of the direct current decoupling capacitor is grounded.

Abstract: A Doherty power amplifier includes a main power amplification circuit, an auxiliary power amplification circuit, a connection circuit, and an impedance conversion circuit. An output end of the main power amplification circuit and an output end of the auxiliary power amplification circuit are connected to two ends of the connection circuit separately by using bonding wires. The output end of the auxiliary power amplification circuit is further connected to one end of the impedance conversion circuit by using a bonding wire, and the other end of the impedance conversion circuit is connected to an output load.