Patents by Inventor Liuyu Lin

Liuyu Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating Cu—In—Ga—Se film solar cell
    Patent number: 9105801
    Abstract: A method for fabricating a Cu—In—Ga—Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu—In—Ga—Se absorbing layer on the back electrode by fractional sputtering in a plurality of sputter chambers; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu—In—Ga—Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer on the In2Se3 or ZnS buffer layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.
    Type: Grant
    Filed: January 11, 2014
    Date of Patent: August 11, 2015
    Inventors: Liuyu Lin, Zhun Zhang
  • Method for fabricating Cu—In—Ga—Se film solar cell
    Patent number: 8969124
    Abstract: A method for fabricating a Cu—In—Ga—Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu—In—Ga—Se absorbing layer on the molybdenum back electrode; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu—In—Ga—Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.
    Type: Grant
    Filed: January 11, 2014
    Date of Patent: March 3, 2015
    Inventors: Liuyu Lin, Zhun Zhang
  • Method for fabricating Cu-In-Ga-Se Film Solar Cell
    Publication number: 20150017755
    Abstract: A method for fabricating a Cu—In—Ga—Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu—In—Ga—Se absorbing layer on the molybdenum back electrode; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu—In—Ga—Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.
    Type: Application
    Filed: January 11, 2014
    Publication date: January 15, 2015
    Inventors: Liuyu Lin, Zhun Zhang
  • METHOD FOR FABRICATING Cu-In-Ga-Se FILM SOLAR CELL
    Publication number: 20140193943
    Abstract: A method for fabricating a Cu—In—Ga—Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu—In—Ga—Se absorbing layer on the back electrode by fractional sputtering in a plurality of sputter chambers; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu—In—Ga—Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer on the In2Se3 or ZnS buffer layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.
    Type: Application
    Filed: January 11, 2014
    Publication date: July 10, 2014
    Inventors: Liuyu Lin, Zhun Zhang