Abstract: Medical devices configured to direct sound waves to a body tissue of a subject are provided. The medical device includes a housing and a curved piezoelectric transducer, where the curved piezoelectric transducer is configured to direct sound waves produced by the curved piezoelectric transducer to the body tissue of the subject. Also provided are methods of directing sound waves to a body tissue of a subject using the subject medical devices. The subject medical devices and methods find use in a variety of applications where the treatment of a body tissue of a subject with sound waves is desired.

Abstract: Curved piezoelectric transducers are provided. The curved piezoelectric transducer includes a substrate, a curved support layer having a peripheral portion in contact with the substrate, and a curved piezoelectric element disposed on the curved support layer. Methods of making the curved piezoelectric transducers are also provided. The curved piezoelectric transducers, devices and methods find use in a variety of applications, including devices, such as electronics devices, having one or more (e.g., an array) of the curved piezoelectric transducers on a substrate.

Abstract: After a TEOS oxide film is formed on the surface of a semiconductor device, a PSG film and an SiN film, which have air permeability, are formed on the surface of the TEOS oxide film. Thereafter, a Poly-Si film is formed thereon. A sacrifice layer is removed by a gaseous HF that passes through the PSG film, the SiN film, and the Poly-Si film, and then, the uppermost layer is covered with a Poly-Si/SiC film. A chip scale package having a thin-film hollow-seal structure can be realized on the semiconductor element.

Abstract: A method to a fabricate high surface area, high performance supercapacitor includes include applying a metal layer to at least a portion of a nanostructure; after applying the metal layer, oxidizing the metal layer; applying a plurality of additional metal layers onto a previously oxidized metal layer; and after applying each additional metal layer, oxidizing the additional metal layer prior to applying a successive additional metal layer. The metal layers may include a composition comprising at least one metal, the at least one metal selected from the group consisting of ruthenium, titanium, manganese, vanadium, iron, tin, cobalt and nickel. Optionally, each of the additional metal layers may be applied using atomic layering deposition (ALD).

Abstract: Disclosed herein is an inertial sensor. The inertial sensor includes: a plurality of driving masses; support bodies connecting a connection bridge so as to support the driving masses; a connection bridge connecting the plurality of driving masses and connecting the plurality of driving masses with the support bodies; and an electrode pattern part including driving electrodes simultaneously driving the driving masses and sensing electrode detecting axial Coriolis force of each of the driving masses.

Abstract: An inertial sensor includes a plate-like substrate layer, a mass body, a support frame, a limit stop extending in the central direction of the mass body from the support frame, and a detection unit detecting the displacement of the displacement part. The inertial sensor adopts the limit stop limiting the downward displacement of the mass body to prevent the support portion of the mass body from being damaged.

Abstract: The invention relates to N-heterocyclic substituent-containing antibiotics, their preparation, and their use. Disclosed are sodium and potassium salts of 7-(?-((N,N?-diisopropylamidino)thio)acetylamino)-3-(((1,2,5,6-tetrahydro-2-methyl-5,6-diox o-1,2,4-triazin-3-yl)thio)methyl) cephalosporanic acid as presented by the general structure (I), their preparation, and their use. The antibiotics of the invention can be used to treat diseases caused by Gram-positive or Gram-negative bacteria such as septicaemia, gastrointestinal tract infection, and urinary tract infection. They have increased half-life in blood and lowered toxicity. They can reduce the frequency of drug use and lower medical treatment costs. They have improved stability and can be stored at ambient temperatures. The method of the invention is simple, and it produces high purity products which can meet the requirements of clinical use.

Abstract: After a TEOS oxide film is formed on the surface of a semiconductor device, a PSG film and an SiN film, which have air permeability, are formed on the surface of the TEOS oxide film. Thereafter, a Poly-Si film is formed thereon. A sacrifice layer is removed by a gaseous HF that passes through the PSG film, the SiN film, and the Poly-Si film, and then, the uppermost layer is covered with a Poly-Si/SiC film. A chip scale package having a thin-film hollow-seal structure can be realized on the semiconductor element.

Abstract: Disclosed herein is an inertial sensor. The inertial sensor includes: a plurality of driving masses; support bodies supporting the driving masses so as to freely move in a state in which the driving masses float; a connection bridge connecting the plurality of driving masses and connecting the plurality of driving masses with the support bodies; and an electrode pattern part including driving electrodes simultaneously driving the driving masses and sensing electrode detecting axial Coriolis force of each of the driving masses.

Abstract: An under-bump metallization (UBM) structure for a semiconductor device is provided. The UBM structure has a center portion and extensions extending out from the center portion. The extensions may have any suitable shape, including a quadrangle, a triangle, a circle, a fan, a fan with extensions, or a modified quadrangle having a curved surface. Adjacent UBM structures may have the respective extensions aligned or rotated relative to each other. Flux may be applied to a portion of the extensions to allow an overlying conductive bump to adhere to a part of the extensions.

Abstract: Disclosed herein is an inertial sensor. There is provided an inertial sensor 100, including: a plate-like substrate layer 110, a mass body 130, a post 140, a support part 150 extending in the central direction of the mass body 130 from the post 140, and a detection unit 170 detecting the displacement of the displacement part 113. The inertial sensor adopts the support part 150 limiting the downward displacement of the mass body 130 to prevent the support portion of the mass body 130 from being damaged.

Abstract: An under-bump metallization (UBM) structure for a semiconductor device is provided. The UBM structure has a center portion and extensions extending out from the center portion. The extensions may have any suitable shape, including a quadrangle, a triangle, a circle, a fan, a fan with extensions, or a modified quadrangle having a curved surface. Adjacent UBM structures may have the respective extensions aligned or rotated relative to each other. Flux may be applied to a portion of the extensions to allow an overlying conductive bump to adhere to a part of the extensions.

Abstract: The invention relates to N-heterocyclic substituent-containing antibiotics, their preparation, and their use. Disclosed are sodium and potassium salts of 7-(?-((N,N?-diisopropylamidino)thio)acetylamino)-3-(((1,2,5,6-tetrahydro-2-methyl-5,6-dioxo-1,2,4-triazin-3-yl)thio)methyl) cephalosporanic acid as presented by the general structure (I), their preparation, and their use. The antibiotics of the invention can be used to treat diseases caused by Gram-positive or Gram-negative bacteria such as septicaemia, gastrointestinal tract infection, and urinary tract infection. They have increased half-life in blood and lowered toxicity. They can reduce the frequency of drug use and lower medical treatment costs. They have improved stability and can be stored at ambient temperatures. The method of the invention is simple, and it produces high purity products which can meet the requirements of clinical use.

Abstract: The present invention discloses a waveguide antenna structure and a method of manufacture. The waveguide antenna structure can include a non-metallic substrate having a waveguide channel extending along a first direction and an inlet channel extending along a second direction. The inlet channel intersects with the waveguide channel and both channels are at least partially coated with a metallic material. The waveguide channel can have a generally U-shaped cross-section with an open side that is at partially enclosed by a slot plate that is attached to the non-metallic substrate.

Abstract: Systems and methods for local synthesis of silicon nanowires and carbon nanotubes, as well as electric field assisted self-assembly of silicon nanowires and carbon nanotubes, are described. By employing localized heating in the growth of the nanowires or nanotubes, the structures can be synthesized on a device in a room temperature chamber without the device being subjected to overall heating. The method is localized and selective, and provides for a suspended microstructure to achieve the thermal requirement for vapor deposition synthesis, while the remainder of the chip or substrate remains at room temperature. Furthermore, by employing electric field assisted self-assembly techniques according to the present invention, it is not necessary to grow the nanotubes and nanowires and separately connect them to a device. Instead, the present invention provides for self-assembly of the nanotubes and nanowires on the devices themselves, thus providing for nano- to micro-integration.

Abstract: A plastic, waveguide-fed, horn antenna is manufactured using a three-dimensional (3D), polymeric micro hot embossing process. Two cavity resonators may be designed to reduce the impedance mismatch between the pyramidal horn antenna and the feeding waveguide. The waveguide-fed antenna may be fabricated using a self-aligned 3D plastic hot embossing process followed by a selective electroplating and sealing process to coat an approximately 8 ?m-thick gold layer around the internal surfaces of the system. As such, this plastic, low-cost manufacturing process may be used to replace the expensive metallic components for millimeter-wave systems and provides a scalable and integrated process for manufacturing an array of antenna.

Abstract: Systems and methods for local synthesis of silicon nanowires and carbon nanotubes, as well as electric field assisted self-assembly of silicon nanowires and carbon nanotubes, are described. By employing localized heating in the growth of the nanowires or nanotubes, the structures can be synthesized on a device in a room temperature chamber without the device being subjected to overall heating. The method is localized and selective, and provides for a suspended microstructure to achieve the thermal requirement for vapor deposition synthesis, while the remainder of the chip or substrate remains at room temperature. Furthermore, by employing electric field assisted self-assembly techniques according to the present invention, it is not necessary to grow the nanotubes and nanowires and separately connect them to a device. Instead, the present invention provides for self-assembly of the nanotubes and nanowires on the devices themselves, thus providing for nano- to micro-integration.

Abstract: An actively tunable waveguide-based iris filter having a first part including a first portion of a deformable iris filter cavity having an inlet and an outlet; a second part operatively coupled with the first part and including a second portion of the deformable iris filter cavity having a deformable membrane operatively coupled with the first portion of a deformable iris filter cavity; the first portion and the second portion together forming the deformable iris filter cavity of the tunable waveguide-based iris filter; and means for moving the deformable membrane, whereby movement of the deformable membrane changes the geometry of the deformable iris filter cavity for causing a change in the frequency of a signal being filtered by the filter. The tunable filter is fabricated using a MEMS-based process including a plastic micro embossing process and a gold electroplating process. Prototype filters were fabricated and measured with bandwidth of 4.05 GHz centered at 94.79 GHz with a minimum insertion loss of 2.

Abstract: A bonding technique suitable for bonding a non-metal body, such as a silicon MEMS sensor, to a metal surface, such a steel mechanical component is rapid enough to be compatible with typical manufacturing processes, and avoids any detrimental change in material properties of the metal surface arising from the bonding process. The bonding technique has many possible applications, including bonding of MEMS strain sensors to metal mechanical components. The inventive bonding technique uses inductive heating of a heat-activated bonding agent disposed between metal and non-metal objects to quickly and effectively bond the two without changing their material properties. Representative tests of silicon to steel bonding using this technique have demonstrated excellent bond strength without changing the steel's material properties.

Abstract: A microfabricated actuator of the vertical comb-drive (AVC) type or staggered vertical comb-drive type for torsional or linear applications includes torsion springs which permit self-aligned deformation of the device (micromirror) structure of the actuator through the heating of the torsional springs to plasticity. The torsional springs can include perpendicular-beam springs or double folded beams which allow axial movement of the spring when heated. Heating of the springs can be by bulk heating of the actuator structure or by Joule heating to the torsional springs by passing an electrical current therethrough.