Patents by Inventor Liwen SANG

Liwen SANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multilayer film structure and method for producing same
    Patent number: 12247297
    Abstract: The present invention provides: a multilayer film structure which has high crystallinity and planarity; and a method for producing this multilayer film structure. This multilayer film structure is provided with: an Si (111) substrate; a first thin film that is arranged on the Si (111) substrate, while being formed of a nitride material and/or aluminum; and a second thin film that is arranged on the first thin film, while being formed of a nitride material. An amorphous layer having a thickness of 0 nm or more but less than 1.0 nm are present on the Si (111) substrate; and the full width at half maximum (FWHM) of a rocking curve of the (0002) plane at the surface of this multilayer film structure is 1.50° or less.
    Type: Grant
    Filed: October 27, 2020
    Date of Patent: March 11, 2025
    Assignees: TOSOH CORPORATION, National Institute for Materials Science
    Inventors: Yuya Tsuchida, Yuya Suemoto, Yoshihiro Ueoka, Masami Mesuda, Hideto Kuramochi, Takahiro Nagata, Liwen Sang, Toyohiro Chikyow
  • LAMINATE AND METHOD FOR MANUFACTURING SAME
    Publication number: 20240401184
    Abstract: A laminate includes a structure in which a Si (111) substrate, an oxygen-containing aluminum nitride film, and a gallium nitride film are laminated. The laminate is obtained by a production method for a laminate that is characterized by having a structure in which a Si (111) substrate, an oxygen-containing aluminum nitride film, and a gallium nitride film are laminated, the production method having: an AlN film-formation step in which an aluminum nitride film is formed on the Si (111) substrate and an Si substrate including an aluminum nitride film is obtained; an oxidation step in which the Si substrate including the aluminum nitride film is treated in an oxidizing atmosphere and a Si substrate including an oxygen-containing aluminum nitride film is obtained; and a GaN film-formation step in which a gallium nitride film is formed on the Si substrate including the oxygen-containing aluminum nitride film.
    Type: Application
    Filed: October 6, 2022
    Publication date: December 5, 2024
    Inventors: Yuya SUEMOTO, Yoshihiro UEOKA, Masami MESUDA, Takahiro NAGATA, Liwen SANG, Toyohiro CHIKYOW
  • MULTILAYER FILM STRUCTURE AND METHOD FOR PRODUCING SAME
    Publication number: 20240158954
    Abstract: The present invention provides: a multilayer film structure which has high crystallinity and planarity; and a method for producing this multilayer film structure. This multilayer film structure is provided with: an Si (111) substrate; a first thin film that is arranged on the Si (111) substrate, while being formed of a nitride material and/or aluminum; and a second thin film that is arranged on the first thin film, while being formed of a nitride material. An amorphous layer having a thickness of 0 nm or more but less than 1.0 nm are present on the Si (111) substrate; and the full width at half maximum (FWHM) of a rocking curve of the (0002) plane at the surface of this multilayer film structure is 1.50° or less.
    Type: Application
    Filed: October 27, 2020
    Publication date: May 16, 2024
    Applicants: TOSOH CORPORATION, National Institute for Materials Science
    Inventors: Yuya TSUCHIDA, Yuya SUEMOTO, Yoshihiro UEOKA, Masami MESUDA, Hideto KURAMOCHI, Takahiro NAGATA, Liwen SANG, Toyohiro CHIKYOW